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60results about How to "Degrade solvent" patented technology

Microbial degradation of water-borne paint containing high levels of organic solvent

A method for degrading, detackifying and reducing solvent in water comprising organic solvent-laden water-borne paint that comprises adding to the water an effective degrading, detackifying and / or solvent-reducing amount of at least one microorganism culture and sufficient micronutrients to sustain the growth of the at least one microorgansim culture and to reduce solvent content of the water. A method of reducing chemical oxygen demand in water comprising organic solvent-laden water-borne paint, wherein the water contains an excess amount of organic solvent from one or both of paint spray operations and paint spray nozzle cleaning operations, the method comprising adding to the water an effective degrading and detackifying amount of at least one microorganism culture and micronutrients to sustain the growth of the at least one microorgansim culture, whereby chemical oxygen demand in the water is reduced by at least 50% relative to the same system without adding the micronutrients.
Owner:ATOTECH DEUT GMBH

Circuit board, semiconductor device, process for manufacturing circuit board and process for manufacturing semiconductor device

InactiveUS20130015582A1Solubility to solvent is deterioratedDeteriorating film-forming abilitySemiconductor/solid-state device detailsPrinted circuit aspectsPower semiconductor deviceGlass transition point
A circuit board (1) exhibits an average coefficient of thermal expansion (A) of the first insulating layer (21) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point of equal to or higher than 3 ppm / degrees C. and equal to or lower than 30 ppm / degrees C. Further, an average coefficient of thermal expansion (B) of the second insulating layer (23) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point is equivalent to an average coefficient of thermal expansion (C) of the third insulating layer (25) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point. (B) and (C) are larger than (A), and a difference between (A) and (B) and a difference between (A) and (C) are equal to or higher than 5 ppm / degrees C. and equal to or lower than 35 ppm / degrees C.
Owner:SUMITOMO BAKELITE CO LTD

Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group-iii nitride crystals

A method for adding hydrogen-containing and / or nitrogen-containing compounds to a nitrogen-containing solvent used during ammonothermal growth of group-Ill nitride crystals to offset decomposition products formed from the nitrogen-containing solvent, in order to shift the balance between the reactants, i.e. the nitrogen-containing solvent and the decomposition products, towards the reactant side.
Owner:RGT UNIV OF CALIFORNIA
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