The invention relates to the field of manufacturing of
semiconductor integrated circuits, in particular to a method for establishing a
nonlinear noise model of a GaN HEMT (
high electron mobility
transistor). The method is characterized by comprising the following steps: S1, establishing a nonlinear
equivalent circuit model of the GaN HEMT; S2, introducing
noise sources into an intrinsic area in the nonlinear
equivalent circuit model of the GaN HEMT to obtain expression formulae of three
noise sources; S3, under different drain-source current bias conditions, acquiring a change relationship of a channel
noise coefficient in the nonlinear
equivalent circuit model of the GaN HEMT along with drain-source current; S4, according to the change relationship of the channel noise coefficient along with the drain-source current, acquiring an intact expression formula of a drain noise
current source along with the drain-source current, and according to the three noise sources introduced into the nonlinear equivalent circuit model of the GaN HEMT, establishing the
nonlinear noise model of the GaN HEMT. The
nonlinear noise model of the GaN HEMT can simulate noise characteristics of a GaN HEMT device in a nonlinear state, namely, change of noise parameters of the device along with input power, and can be used for designing a GaN HEMT low-
noise power amplifier.