Method for establishing nonlinear noise model of GaN HEMT

Abstract

The invention relates to the field of manufacturing of semiconductor integrated circuits, in particular to a method for establishing a nonlinear noise model of a GaN HEMT (high electron mobility transistor). The method is characterized by comprising the following steps: S1, establishing a nonlinear equivalent circuit model of the GaN HEMT; S2, introducing noise sources into an intrinsic area in the nonlinear equivalent circuit model of the GaN HEMT to obtain expression formulae of three noise sources; S3, under different drain-source current bias conditions, acquiring a change relationship of a channel noise coefficient in the nonlinear equivalent circuit model of the GaN HEMT along with drain-source current; S4, according to the change relationship of the channel noise coefficient along with the drain-source current, acquiring an intact expression formula of a drain noise current source along with the drain-source current, and according to the three noise sources introduced into the nonlinear equivalent circuit model of the GaN HEMT, establishing the nonlinear noise model of the GaN HEMT. The nonlinear noise model of the GaN HEMT can simulate noise characteristics of a GaN HEMT device in a nonlinear state, namely, change of noise parameters of the device along with input power, and can be used for designing a GaN HEMT low-noise power amplifier.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for establishing a GaN HEMT nonlinear noise model. Background technique [0002] The device model plays a vital role in circuit design and acts as a bridge between circuit design and process design. Accurate device models are becoming more and more important, which will not only improve the accuracy of circuit design, reduce process iterations, but also reduce product costs and shorten the development cycle. [0003] GaN high electron mobility transistor (HEMT) devices have the advantages of very high two-dimensional electron gas (2-DEG) concentration, high saturation electron mobility and high power density, which makes GaN HEMT devices have advantages in low-noise applications that GaAs devices cannot Comparable advantages, such as: better linear characteristics, higher dynamic range at the same noise figure; greater broadband characterist...

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Problems solved by technology

[0005] Embodiments of the present invention solve the problem that traditional linear noise models cannot be used to design GaN HEMT low-noise power amplifiers by providing a method for establishing a GaN HEMT nonlinear noise model

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