31 results about "Defect prevention" patented technology

A quality management framework system and method for operating a quality plan in a product development organization having quality objectives. The system includes a plurality of computer implemented tools accessible by users for operating a plurality of quality processes. Data relative to the quality processes is collected and aggregated to generate quality reports. Reports are analysed and problems are detected through a defect prevention process. Quality actions are initiated in a feedback quality management action tracking process.

The invention provides a flat panel display integrated with touch screen panel. The touch screen panel is directly formed on an upper substrate of a flat panel display which provides a flat panel display integrated with the touch screen panel with an improved yield and reliability by improving ESD defect prevention due to the introduction of electrostatic by using a shield member covering sensing lines so that the sensing lines formed in a non-display region of the touch screen panel are not exposed to the outside.

The invention provides a method for plating chromium on a spherical cap surface of a large-diameter spherical cap workpiece. In a step of immersing and positioning, the arrangement mode or structure of an anode strap or an anode plate is changed; in a step of plating chromium, opacified chromium is plated under the conditions that the temperature of the plating solution is 70 to 75 DEG C and the current density is 20 to 25A / decimeter<2>; and then, hard chromium is plated under the conditions that the temperature of the plating solution is 50 to 55 DEG C and the current density is 25 to 30A / decimeter<2>. The polishing processing is carried out on the spherical cap surface of the workpiece, which has the advantages of good evenness of chromium plated coating, defect prevention, high electroplating efficiency, fast speed of cladding deposit, high surface finish of the spherical cap surface after chromium is plated, and subsequent mechanical processing workload reduction.

A method of performing a single step / single solvent edge bead removal (EBR) process on a photolithography layer stack including a photoresist layer and a top coat layer using propylene glycol monomethyl ether acetate (PGMEA) or a mixture of PGMEA and gamma-butyrolactone (GBL) is disclosed. The single step / single solvent EBR process is compatible with organic and inorganic BARC layers.

A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.

Provided is an apparatus for cooling a hot-dip plated steel sheet, the apparatus being capable of reducing comb-pattern surface defects occurring on the edge portion of the hot-dip plated steel sheet. The apparatus includes: a gas knife for spraying wiping gas to a steel sheet that has passed through a plating bath, thereby adjusting the plating thickness thereof; a defect prevention portion installed downstream of the gas knife so as to spray cooling gas to the steel sheet, thereby cooling same; and a moving portion for driving the defect prevention portion such that same moves.

A method of performing a single step / single solvent edge bead removal (EBR) process on a photolithography layer stack including a photoresist layer and a top coat layer using propylene glycol monomethyl ether acetate (PGMEA) or a mixture of PGMEA and gamma-butyrolactone (GBL) is disclosed. The single step / single solvent EBR process is compatible with organic and inorganic BARC layers.

An SRAM device and method of forming MOS transistors of the device having reduced defects associated with selective epitaxial growth in moat tip regions is discussed. The SRAM device comprises a core region and a logic region, logic transistors within the logic region of the SRAM, and selective epitaxial regions grown on both source and drain regions; and memory cell transistors within the core region of the SRAM, and having the selective epitaxial regions grown on only one of the source and drain regions. One method of forming the MOS transistors of the SRAM cell comprises forming a gate structure over a first conductivity type substrate to define a channel therein, masking one of the source and drain regions in the core region, forming a recess in the substrate of the unmasked side of the channel, epitaxially growing SiGe in the recess, removing the mask, and forming the source and drain extension regions in source / drain regions.

A first chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, and an oxide film removal retarder which reduces a removal rate of the silicon oxide film. A second chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, an oxide film removal retarder which reduces a removal rate of silicon oxide, and a defect prevention agent which inhibits scratch defects and / or corrosion defects at a surface of an aluminum film. In a one-step CMP process, either of the first or second slurry is used throughout CMP of an aluminum layer until an upper surface of an underlying silicon oxide layer is exposed. In a two-step CMP process, the first slurry is used in an initial CMP of the aluminum layer, and then the second slurry is used in a subsequent CMP until the upper surface of the underlying silicon layer is exposed.

The invention provides a method for plating chromium on a spherical cap surface of a large-diameter spherical cap workpiece. In a step of immersing and positioning, the arrangement mode or structure of an anode strap or an anode plate is changed; in a step of plating chromium, opacified chromium is plated under the conditions that the temperature of the plating solution is 70 to 75 DEG C and the current density is 20 to 25A / decimeter<2>; and then, hard chromium is plated under the conditions that the temperature of the plating solution is 50 to 55 DEG C and the current density is 25 to 30A / decimeter<2>. The polishing processing is carried out on the spherical cap surface of the workpiece, which has the advantages of good evenness of chromium plated coating, defect prevention, high electroplating efficiency, fast speed of cladding deposit, high surface finish of the spherical cap surface after chromium is plated, and subsequent mechanical processing workload reduction.

The invention discloses a thin film transistor, a manufacturing method thereof, an array substrate and a display device, which belongs to the technical field of thin film transistors. The thin film transistor comprises a substrate, a gate electrode, a gate insulation layer and an active layer. The gate insulation layer comprises an inner defect prevention layer and an interface defect prevention layer, wherein the inner defect prevention layer is located between the interface defect prevention layer and the gate electrode; the inner defect prevention layer is used for reducing inner defects of the gate insulation layer; and the interface defect prevention layer is used for reducing defects of a contact interface between the gate insulation layer and the active layer. Through arranging the gate insulation layer in the above mode, the defect number of the inner part of the gate insulation layer and the defect number of the contact surface between the gate insulation layer and the active layer can be reduced, accumulation of carriers (positrons) inside the gate insulation layer and on the contact surface between the gate insulation layer and the active layer can thus be reduced, thin film transistor threshold voltage offset phenomena can be effectively reduced, and the defect rate of the thin film transistors is reduced.

The invention provides a drift fault recognition method of hot-rolling strip steel based on sound signals. The method comprises the following steps of: preprocessing a signal by combining the features of a hot-rolling production line and adopting a resampling and framing technology, carrying out feature extraction on the signal by adopting a Mel frequency cepstrum technology and carrying out feature selection and recognition by adopting a principal component analysis method and a multivariate statistic process T2 control diagram so as to realize the diagnosis of drift faults of the hot-rolling strip steel. The invention has the advantages that the drift phenomenon can be judged accurately and rapidly on line by utilizing an acoustic detection method, the roller replacement time can be reasonably arranged, the roller consumption can be effectively reduced, the production cost can be controlled, and the quality defect prevention capacity and the production operability of the product canbe improved.

An SRAM device and method of forming MOS transistors of the device having reduced defects associated with selective epitaxial growth in moat tip regions is discussed. The SRAM device comprises a core region and a logic region, logic transistors within the logic region of the SRAM, and selective epitaxial regions grown on both source and drain regions; and memory cell transistors within the core region of the SRAM, and having the selective epitaxial regions grown on only one of the source and drain regions. One method of forming the MOS transistors of the SRAM cell comprises forming a gate structure over a first conductivity type substrate to define a channel therein, masking one of the source and drain regions in the core region, forming a recess in the substrate of the unmasked side of the channel, epitaxially growing SiGe in the recess, removing the mask, and forming the source and drain extension regions in source / drain regions.

The present invention relates to a circuit width thinning defect prevention device and a method of preventing a circuit width thinning defect, and can prevent a circuit width thinning defect, that is, a reduction in circuit width due to excessive etching on a specific portion by including a storage means for storing dam design information classified according to the type of a weak portion; an analysis means for analyzing first design information to deduce the type and position of the weak portion; a matching means for extracting the dam design information corresponding to the type of the weak portion from the dam design information stored in the storage means; and a change means for changing the first design information to add a dam according to the dam design information extracted by the matching means to the position of the weak portion deduced by the analysis means.

The invention relates to an anti-tower shaped defect control method for a coiler's asymmetric side guide plate. The method includes: deflecting the transfer rollers of a coiler's transfer roller group, keeping the opening of a driving side guide plate at the level of strip steel width / 2 and the opening of a work side guide plate in the range of strip steel width / 2+60mm-strip steel width / 2+100mm, making a roll table rotate to push the strip steel forward and generate a divergent pushing force simultaneously so as to make the strip steel operate closely to the driving side guide plate, when the strip steel head completely enter the side plates, letting the work side guide plate quickly draw close to the driving side guide plate to realize close, and keeping the driving side guide plate still till the strip steel head is bitten into a subsequent pinch roll group. The method provided by the invention can reduce tower shaped defects of the strip steel, improve coil quality, has no need for recoiling and repair, and saves manpower and material resources. And the method has small investment in equipment hardware transformation, only needs to make angular adjustment on part of the roll table, and other improvements can be achieved by modifying software. Thus, the method is suitable to the field of preventing steel coil tower shaped defects by coilers in various steel production.

The invention relates to a device for preventing a medium around an underground pipeline from collapsing, and belongs to the technical field of underground pipeline defect prevention, and diagnosis and treatment. The device mainly comprises a fixing chain, fixing supports, geotechnical cloth, a reverse filter layer and lock catches, wherein the fixing supports are located on the inner side of thefixing chain and are connected with the fixing chain, the reverse filter layer wrapped in the geotechnical cloth is arranged between the fixing supports, and the lock catches are arranged at the two ends of the fixing chain. The device for preventing the medium around the underground pipeline from collapsing is installed on the periphery of the underground pipeline, the geotechnical cloth and thereverse filter layer are arranged on the device, so that when a leakage point occurs in the pipeline, only water is allowed to flow back and forth around the pipeline, and solid particles are prevented from being lost. According to the device, when the leakage point and water leakage of the underground pipeline occur, surrounding soil bodies and other media are guaranteed not to be lost along withflowing of the water, so that the device plays an essential role in protection of the underground pipeline and a road, a bridge and a building above the pipeline.