The invention discloses a
silicon crystal growing device with two-way
airflow, which comprises a furnace body; an inner cavity of the furnace body is provided with a
cartridge heater inside; two electrodes at the bottom of the heater are respectively embedded into the bottom of the furnace body; the inside of the inner cavity of the heater is provided with a
graphite crucible which is supported and fixed by a connecting rod passing through the bottom of the furnace body; an upper opening of the furnace body is provided with a guide cylinder capable of extending into an inner cavity of the
graphite crucible; the side wall on the top of the furnace body is provided with a vent, and the bottom of the furnace body is provided with an
argon inlet; the vent is communicated with the
argon inlet through a gap between the inner wall of the heater and the outer wall of the
graphite crucible; a
gas cylinder is sleeved outside the furnace body; the side wall at the bottom of the
gas cylinder is provided with an outlet; and the outlet is communicated with the vent through a gap between the
gas cylinder and the furnace body. The
silicon crystal growing device adopts the two-way
airflow, the
corrosion of harmful gases in the thermal field to graphite pieces can be reduced, and the contact area and
contact time of
oxygen and graphite are decreased, so that carbon oxides and the harmful gases on the surface of
silicon liquid are quickly taken way from a thermal
system under the driving of the flow direction of lower gases, and the carbon content in the
crystal is effectively controlled.