The invention relates to a magnetic revolution counter and to a method for determining a specifiable quantity n of revolutions of an external
magnetic field that are to be determined, said external
magnetic field produced by a rotating element (4), or a quantity n of
magnetic poles of a rotating pole wheel, which quantity of
magnetic poles can be moved past, or a linear magnetic scale that can bemoved past, containing a revolution sensor (2), which contains
magnetic domain-wall conducting tracks, which consist of open spirals or multiply wound loops closed in themselves, which are formed by aGMR layer stack or a soft
magnetic layer having locally present TMR layer stacks and into which magnetic 180 degrees domain walls can be introduced and - by measurement of the electrical resistance of specifiable spiral sections or loop sections - can be located, wherein a single domain wall is introduced into the domain-wall conducting tracks or at least two
magnetic domain walls are introducedinto the domain-wall conducting tracks in such a way that the at least two domain walls are brought into a defined distance of greater than 360 degrees from each other, with respect to the location change thereof from a first to a second position in the event of rotation of the external
magnetic field by the angle of greater than 360 degrees, and are lastingly thus spaced apart from each other andwherein
electrical contacts arranged in a defined manner are provided on the domain-wall conducting tracks, which
electrical contacts, together with associated domain-wall conducting track sections covered thereby, are interconnected to form separate but jointly readable Wheatstone half-bridges, wherein the resistance ratios determined by the Wheatstone half-bridges are stored as a
signal level completely in a memory (9) as a table, which memory can be continuously compared with table-like target value patterns stored in a further memory (10) for each permissible revolution i (0 < i < n) in order to determine the number of revolutions and, for the number of revolutions i to be determined, the number of revolutions for which the measured resistance ratios match the target value pattern inthe memory (10) is output, determined by a corresponding
processing unit (11).