The invention discloses repair technology of a tubular PERC
solar cell. The repair technology is set after annealing of a
silicon wafer and before
film coating of a back face of the
silicon wafer. The repair technology comprises the following steps: (1) a semi-finished
silicon wafer which stays over 4 hours after the annealing and before the
film coating is placed into a repair furnace,
nitrogen having a flow rate of 5-10slm is introduced into the repair furnace to achieve self-cleaning, and inlet time of the
nitrogen is 1-5min; (2)
nitrogen having a flow rate of 5-20slm is introduced to blow and sweep dust on the silicon wafer; (3) temperature of the repair furnace is raised from
room temperature to 500-650 DEG C, and nitrogen having a flow rate of 1-5slm is introduced at the same time; and (4) the temperature of the repair furnace is kept at 500-650 DEG C for 5-30min, and nitrogen having a flow rate of 5-20slm is introduced at the same time. Correspondingly, the invention further discloses a preparation technology of the tubular PERC
solar cell. Through adoption of the repair technology and the preparation technology, the problem of efficiency reduction brought by too long semi-finished product stay time is solved, and the EL
yield rate is improved.