33results about How to "No outgassing" patented technology

A sealing disc for vacuum sealing is suitable for moving to an opening position or a closing position in a reciprocating mode to open or seal a valve port of an all-metal valve. A first sealing face is formed on a sealing plate of the sealing disc, and the first sealing face of the the sealing disc directly abuts against a valve port of the all-metal vacuum valve at the closing position . By meansof compensation movement and adjustment movement when the sealing faces made of metal abut against each other, the vacuum sealing performance can be improved, and the service life can be prolonged.

The present invention relates to an organic electroluminescence device, comprising a substrate, and a light-emitting device sequentially formed on the substrate, the light-emitting device comprising a first electrode layer, a hole injection layer, a hole transport layer, a light-emitting layer, a hole A hole blocking layer, an electron transport layer and a second electrode layer, the electron transport layer includes an electron transport host material with coordination ability and an inert metal doped in the electron transport host material; the electron transport host material is Electron transport materials with coordination properties can undergo coordination reactions with inert metal cations to promote the process of inert metals losing electrons, thereby reducing the work function of inert metals and enabling inert metals to achieve n-type doping similar to active metals The effect is to reduce the LUMO energy level of the electron transport material, thereby promoting the injection of electrons, thereby significantly reducing the driving voltage of the device and improving the efficiency of the device.

Disclosed is a cavity heating device. The cavity heating device comprises a cavity wall heating structure and / or a slide holder heating structure. The cavity wall heating structure is arranged on the inner wall of a reaction cavity. The slide holder heating structure is arranged at the bottom of a slide holder. The cavity heating device can reduce or avoid nonuniformity caused by the fact that plasma starting is unsymmetrical in structure in the plasma etching process. An electrode fixing structure is free of air discharge under the plasma starting condition and can meet requirement of a vacuum cavity for vacuum degree.

The invention discloses a chip carrier and belongs to the technical field of plasma body processes. The chip carrier comprises a cavity, a cavity upper cover, an electrode, a chip fixing disc, a fixing disc supporting ring and a supporting disc. A chip fixing structure of the chip carrier comprises the chip fixing disc and the fixing disc supporting ring. An unevenness phenomenon caused by an asymmetric structure when a plasma body is started can be reduced or avoided, and a gas homogenizing structure is simplified. Under the starting condition of the plasma body, the chip carrier does not cause a gas escape phenomenon, so that the requirement of a chip for the cavity vacuum degree can be kept.

The invention belongs to the technical field of organic electroluminescent devices, in particular to an n-type dopant based on an inert metal, and further discloses its application as an electron transport material dopant and its application in organic electroluminescent devices application. The n-type dopant based on the inert metal of the present invention includes an inert metal and a ligand compound with a coordination function, and the dopant is doped in a conventional electron transport host material, which can effectively reduce the electron transport material LUMO energy level, and then promote the injection of electrons, thereby significantly reducing the driving voltage of the device and improving the efficiency of the device.

Provided is a metallosiloxane compound (A) prepared by reacting a bifunctional silane compound (S1), a monofunctional silane compound (S2), a boron compound (M), and optionally H2O in a molar ratio of [the silane compound (S1)]:[the silane compound (S2)]:[the boron compound (M)]:[H2O] of n:m:k:a, where n, m, k, and a satisfy all conditions (i), (ii), and (iii), in which the metallosiloxane compound has at least one Si—H bond or C2-10 alkenyl group per molecule, and the conditions (i), (ii), and (iii) are expressed as follows:(i) n>0, m>0, k>0, a≧0;(ii) m / n≧0.5; and(iii) (n+m) / k≧1.8.

The present invention discloses a horizontal continuous magnetron sputtering film plating machine online panel constant-temperature heating apparatus, wherein a conveying base plate is horizontally provided with a copper conducting plate, the copper conducting plate is provided with an embedded thermocouple temperature measuring rod and a PTC constant-temperature low-voltage heating element, the embedded thermocouple temperature measuring rod and the PTC constant-temperature low-voltage heating element are respectively and correspondingly connected to the copper disk electrodes on the conveying base plate, the bottom portion of a vacuum chamber is provided with rotary electric conduction wheel electrodes, the rotary electric conduction wheel electrodes comprise a group of power supply electrodes and a group of temperature measuring electrodes, and when the copper disk electrodes and the rotary electric conduction wheel electrodes correspondingly contact and are electrically connected, real-time temperature detection and heating control are performed. With the apparatus of the present invention, the problem of the difficult heating on the panel to be plated in the vacuum chamber of the continuous magnetron sputtering film plating is overcome, the film plating qualities of the transparent electric conduction film, the antireflection film and the high reflection film of the plated display panel are increased, and the apparatus is suitable for increasing of the film plating quality of the transparent electric conduction film, the antireflection film and the high reflection film of the display panel.

The present invention relates to a laminated organic electroluminescent device, comprising a substrate, and a light-emitting device sequentially formed on the substrate, the light-emitting device comprising a first electrode layer, a hole injection layer, a hole transport layer, and a light-emitting layer , an electron transport layer, an electron generation layer, a hole injection layer, a hole transport layer, a light emitting layer and an electron transport layer second electrode layer, the electron generation layer includes an electron transport material with coordination ability and doped in the Inert transition metals in electron transport materials; electron transport materials with coordination ability can form complexes with inert metal ions to reduce the work function of inert metals, so that they can achieve n-type doping effects similar to active metals and improve free current carrying Subconcentration, reduce the LUMO energy level of the electron transport material, used as the electron generation layer of the laminated device, promote the generation of electrons and enhance the separation of electrons, so that the driving voltage of the device can be significantly reduced, and the device efficiency can be improved.

The invention belongs to the technical field of organic electroluminescent devices, in particular to a method for realizing N-type doping of electron transport materials based on inert metals, and further discloses the application of the method in preparing organic electroluminescent devices. The method for N-type doping of electron transport materials based on inert metals in the present invention uses ligand compounds with coordination functions to connect with existing general electron transport materials, so that the general electron transport materials increase some The performance of the group, and make it have a coordination function, and then can use its coordination with M n+ Coordination occurs to promote the inert metal M to lose electrons and reduce its work function, so that the inert metal can achieve the N-type doping effect similar to the active alkali metal, improve the transmission characteristics of the electron transport material, reduce the injection barrier of electrons, and enhance the electron density. injection.

A photohardening resin composition comprises (A) oligomer containing ethylenic bonds, (B) monomers containing at least one acrylate group, and (C) a photoinitiator, wherein (B) is selected from mono-acrylate monomers shown in formula (I), bis-acrylate monomers shown in formula (II) or a composition of the two, and the formula (I) and the formula (II) are defined in the specification and the claims. The invention also provides an adhesion layer formed by irradiation of the photohardening resin composition, a display element containing the adhesion layer, and a method for preparing the display element by using the photohardening resin composition. The hardening of the photohardening resin composition of the invention causes no gas release phenomenon, which further improves the reliability of the display element for subsequent application.

The invention discloses a high-energy particle energy-reducing device and a preparation method thereof. The energy-reducing device is a graphite substrate covered with a dense boron nitride coating, and the thickness of the dense boron nitride coating is 5-800[mu]m; the preparation method adopts a vapor deposition method, and comprises the following steps: firstly, placing a graphite substrate into a vacuum chamber, then mixing an ammonia gas, a boron chloride gas and a nitrogen gas according to the volume ratio of the ammonia gas to the boron chloride gas to the nitrogen gas of (0.8-1.2):(0.8-1.2):(40-60) to obtain a mixed gas, then firstly raising the temperature in the vacuum chamber to 500-2000 DEG C, and finally introducing the mixed gas with a flow quantity of 10-100sccm into the vacuum chamber for 12-36h to obtain the target product. According to the high-energy particle energy-reducing device provided by the invention, the degassing rate is much lower than that of a graphite energy-reducing device, a high-energy particle beam has good penetrating performance on the high-energy particle energy-reducing device and the graphite energy-reducing device, and the high-energy particle energy-reducing device can be easily, widely and commercially applied to the fields of high-precision and high-energy particle beam energy reduction of a cyclotron.

A method for forming a three-dimensional structure includes depositing a first pattern of thermoplastic toner particles onto a first surface of a receiver to form a plurality of spaced-apart stacks of toner particles that extend above the first surface of the receiver. The receiver is bent so that non-overlapping first and second portions of the receiver are defined. At least part of a surface of the receiver in the second portion is brought into contact with the deposited stacks of toner particles. The toner particles are fused to bind the second portion to the first portion and provide a selected spacing between the first portion and the second portion.

A structural laminate having a selected resistance to a first stress applied in a selected first stress direction relative to the laminate is formed from first and second sheets. A selected volume of toner is deposited on the first sheet to form a deposited toner pattern, the deposited toner pattern being disposed over a selected first surface area of the first sheet and extending normal to the first sheet by a selected first height. The second sheet, or toner thereon, is brought into contact with the deposited toner pattern. The deposited toner pattern is fixed to produce a fixed toner pattern that adheres the second sheet to the first sheet, in that way forming the laminate. The fixed toner pattern includes one or more first contiguous regions of toner extending in a direction within about 45° of the stress direction, so that the contiguous regions resist the applied stress.

The invention discloses a plate electrode fixing structure, belonging to the technical field of plasma etching. The plate electrode fixing structure comprises an insulating support, the insulating support is provided with a plurality of air inlets, and upper electrodes and lower electrodes are arranged around the air inlets. The insulating support is 5-1,000mm thick and is made of an insulating material such as ceramic, quartz, polytetrafluoroethylene or polycarbonate. The frequency of a radio-frequency power supply applied between the upper electrodes and the lower electrodes is 0-10GHz. Thedistance between the upper electrodes and the lower electrodes is 2-1,000mm. the area diameter of the upper electrodes and the lower electrodes is 20-3,000mm. By adopting the plate electrode fixing structure, the scope of uniform distribution of a plasma starter can be widened, and particularly good edge uniformity can be achieved. When the plasma starter is used, no air discharging can be causedby the plate electrode fixing structure, and a vacuum chamber can meet vacuum requirements.

Provided is a core material for a vacuum insulation material formed of a melamine resin-cured foam having an open cell content of at least 80%. In addition, provided are a vacuum insulation material containing the core material and an outer skin material which vacuum-packages the core material, and a method for manufacturing same.