The invention discloses a manufacturing method of a double-sided power generation back contact
heterojunction solar cell. The manufacturing method comprises the following steps: providing an N-type orP-type
silicon wafer which is textured and cleaned to form a textured surface; forming a first
semiconductor layer and a second
semiconductor layer on the back surface of the
cell; forming a
passivation film layer and a transparent anti-reflection layer on the front surface of the
cell; depositing a transparent conductive film layer and a seed
copper layer on the back surface of the
cell; formingan insulating groove on the back surface of the battery by wet
etching or printing
etching paste;
electroplating-resistant ink is printed, a
copper grid line
electrode is formed through
electroplating, and the area occupied by the
copper grid line
electrode does not exceed 60% of the total area of the battery; and removing the
electroplating-resistant ink and the copper seed layer outside the copper grid line
electrode through a film-removing
etching solution. According to the invention, the insulating groove is formed firstly and then the copper grid line electrode is formed, so that the copper grid line electrode and the insulating groove can independently adjust the required width, thereby realizing a relatively large
light transmission area on the back surface, improving the power generation capacity of the back surface of the battery, realizing that the
light transmission area on the back surface reaches 40%-90%, realizing double-sided power generation and greatly improving the power generation capacity of the module.