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TFT (Thin Film Transistor) liquid crystal display device and manufacturing method thereof

A thin film transistor and liquid crystal display technology, which is applied in the manufacture of semiconductor/solid state devices, transistors, semiconductor devices, etc., can solve the problems of limiting the aperture ratio of TFT-LCD and affecting the picture performance, so as to improve the resolution and picture performance, and improve the aperture. rate, the effect of increasing the light transmission area

Active Publication Date: 2013-06-12
SHANGHAI AVIC OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the common electrode line 102 is parallel to the direction of the gate line 101 and the TFT 104 has a double I-shaped compensation channel structure perpendicular to the data line 103, the improvement of the aperture ratio of the TFT-LCD is limited and the picture performance is affected.

Method used

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  • TFT (Thin Film Transistor) liquid crystal display device and manufacturing method thereof
  • TFT (Thin Film Transistor) liquid crystal display device and manufacturing method thereof
  • TFT (Thin Film Transistor) liquid crystal display device and manufacturing method thereof

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Embodiment Construction

[0032] The thin film transistor liquid crystal display device and its manufacturing method proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0033] Such as figure 2 As shown, the present invention provides a thin film transistor liquid crystal display device, including a substrate 200, a gate line 201, a common electrode line 202, a data line 203, a TFT 204 and a pixel electrode 206, wherein the drain 204a of the TFT 204 passes through the via hole 205 It is electrically connected to the pixel electrode 206, the gate is integrally formed with the gate line 201, the source is integrally formed with the data line 203, the TFT 204 has an I-shaped compensation channel structure 204b parallel to the data line 203, and the common The electrode line 202 has a vertical portion 202 a perpendicular to the gate line 201 and an extension portion 202 b extending along the direction of the gat...

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Abstract

The invention provides a TFT (Thin Film Transistor) liquid crystal display device and a manufacturing method thereof. A common electrode line is enabled to have a vertical part and an extension part, wherein the vertical part is vertically intersected with gate lines and the extension part extends along the direction of the gate lines and is overlapped with the gate lines. Moreover, a TFT is enabled to have an I-shaped compensation channel structure in parallel with a data line. Therefore, the light transmission area of pixel areas is increased, the aperture ratio of a liquid crystal display is improved and the image display performance of the liquid crystal display is further improved.

Description

technical field [0001] The invention relates to the technical field of thin film transistor liquid crystal displays, in particular to a thin film transistor liquid crystal display device and a manufacturing method thereof. Background technique [0002] TFT-LCD (Thin film transistor liquid crystal display, Thin film transistor liquid crystal display) is a kind of liquid crystal display, which uses thin film transistor technology to improve image quality, and is widely used in TVs, flat panel displays and projectors. [0003] Since the cost of the source driver is higher than the cost of the gate driver, reducing the number of data lines (source lines) will reduce the cost of the driver. The liquid crystal display with dual gate wiring (dual gate) increases the number of data lines by half. 1 times the number of gate lines to reduce costs. [0004] Such as figure 1 As shown, the structure of the liquid crystal display with double gate wiring (dual gate) in the prior art incl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1362G02F1/1368G02F1/1333G02F1/1343H01L29/786H01L27/02H01L21/77
Inventor 曹兆铿
Owner SHANGHAI AVIC OPTOELECTRONICS
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