TFT-LCD array substrate and method for manufacturing the same

Abstract

The present invention relates to a TFT-LCD array substrate and a manufacturing method thereof. The TFT-LCD array substrate comprises gate lines and data lines, pixel electrodes and film transistors are formed in pixel areas defined by the gate lines and the data lines; the film transistor includes a gate electrode, a source electrode and a transparent drain electrode. The transparent drain electrode and the pixel electrode are positioned at the same layer, and they are formed in a same patterning process. The transparent drain electrode and the pixel electrodes are integrally structured. According to the invention, gate lines and gate electrodes are formed by a first patterning process, data lines and source electrodes are formed by a second patterning process, through holes in passivation layers are formed by a third patterning process, and transparent drain electrodes and pixel electrodes are formed by a fourth patterning process. Due to employment of the transparent electrode, light transmittance area of the pixel area is effectively increased, and aperture ratio is increased. The increasing aperture ratio can not only result in an increase in brightness, but also result in a decrease in brightness of backlight, therefore, energy consumption and manufacture cost can be saved.

Description

technical field [0001] The invention relates to a thin film transistor liquid crystal display and a manufacturing method thereof, in particular to a TFT-LCD array substrate and a manufacturing method thereof. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, and no radiation, and occupies a dominant position in the current flat panel display market. At present, five or four patterning processes are mainly used to manufacture TFT-LCD array substrates in the prior art. The five patterning processes mainly include: patterning of gate lines and gate electrodes, patterning of active layers, patterning of source / drain electrodes, patterning of via holes and patterning of pixel electrodes. The four-step patterning process is based on the five-step patterning process, and uses the half-tone or gray-tone mask technology to combine the active layer patterning and the source / drain...

AI Technical Summary

Problems solved by technology

However, since this method increases the size of the drain electrode in the thin film transistor, there are technical defects such as small effective light-transmitting area and low aperture ratio.

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