There is disclosed a method for producing a
single crystal silicon solar cell comprising the steps of: implanting
hydrogen ions or
rare gas ions into a
single crystal silicon substrate through an
ion implanting surface thereof to form an
ion implanted layer in the
single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the
ion implanting surface of the
single crystal silicon substrate and / or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the
single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an
impact to the ion implanted layer to mechanically delaminate the
single crystal silicon substrate thereat to leave a single
crystal silicon layer; and forming a p-n junction in the single
crystal silicon layer. There can be provided a single
crystal silicon solar cell where a light conversion layer is provided as a thin-film for effective utilization of silicon as a starting material of the
silicon solar cell, which single crystal
silicon solar cell is excellent in conversion characteristics and is less in degradation due to
light irradiation, and which single crystal silicon
solar cell is provided as a see-through type
solar cell that is
usable as a natural lighting window material of a house or the like.