The invention discloses a preparation method for a
lightning-protection
semiconductor material, belonging to the technical field of
lightning-protection
semiconductor materials. The preparation method provided by the invention comprises the following steps: weighing ball-milled
flake graphite powder, adding the ball-milled
flake graphite powder into a reaction solution of
potassium dichromate and
sulfuric acid so as to obtain a reactant, soaking the reactant with
sodium nitrate, after the completion of soaking, carrying out
calcination so as to obtain a calcined substance, mixing the calcined substance with
ferric sulfate and
ferric chloride, adding alkali and carrying out a reaction so as to generate ferroferric
oxide, carrying out
ultrasonic dispersion and
crystallization so as to obtain modified expanded
graphite, mixing the modified expanded
graphite with
polyaniline and the like, and carrying out
granulation so as to obtain the
lightning-protection
semiconductor material. According to the invention, the
flake graphite powder is used as a
raw material, and the surface of the flake
graphite powder is modified and loaded with nanometer ferroferric
oxide, so excellent performances like electric conduction,
lubrication and shapability can be achieved; charges accumulated on the surface of the semiconductor material can be remotely migrated at a
constant speed; the
disadvantage of imbalance of
local current and ionic current on the surface of a traditional semiconductor material can be compensated; and instance results prove that the lightning-protection semiconductor material provided by the invention has the advantages of good adhesiveness with a
composite material, excellent lightning-protection effect and wide economic prospects.