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Low-voltage varistor ceramic chip and preparation method thereof, and preparation method of low-voltage varistor

A technology of varistors and varistors, which is applied in the direction of varistors, overvoltage protection resistors, resistors, etc., and can solve problems such as poor lightning protection ability

Active Publication Date: 2014-10-08
GUANGDONG FENGHUA ADVANCED TECH HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Traditional low-voltage varistors have the disadvantage of poor lightning protection ability

Method used

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  • Low-voltage varistor ceramic chip and preparation method thereof, and preparation method of low-voltage varistor
  • Low-voltage varistor ceramic chip and preparation method thereof, and preparation method of low-voltage varistor

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Experimental program
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preparation example Construction

[0034] Such as figure 1 Shown, the preparation method of the low-voltage varistor ceramic sheet of an embodiment, comprises the following steps:

[0035] S110, providing ZnO and Bi with a mass ratio of 94-96: 0.2-4: 0.1-0.6: 0.1-2: 0.1-0.6: 0.002-0.02: 0.1-0.5: 0.01-0.5: 0.01-2 2 o 3 , MnCO 3 、Co 3 o 4 , NiO, Al(NO 3 ) 3 、TiO 2 , Nb 2 o 5 and Sb 2 o 3 raw material slurry.

[0036] Raw material slurry in S110 can be prepared through the following steps:

[0037] S112. Set the mass ratio of Bi to 0.2-4: 0.1-0.6: 0.1-2: 0.1-0.6: 0.002-0.02: 0.1-0.5: 0.01-0.5: 0.01-2 2 o 3 , MnCO 3 、Co 3 o 4 , NiO, Al(NO 3 ) 3 、TiO 2 , Nb 2 o 5 and Sb 2 o 3 The mixture was mixed with deionized water and ground to form a slurry.

[0038] The operation of grinding the mixture into a slurry can use a sand mill to grind the mixture to form a slurry. Grinding until the particle size D50 value of the slurry is less than 1 μm.

[0039] S114, add ZnO and deionized water to the s...

Embodiment 1

[0077] Bi with a mass ratio of 0.2:0.1:0.1:0.1:0.02:0.1:0.5:0.01 2 o 3 , MnCO 3 、Co 3 o 4 , NiO, Al(NO 3 ) 3 、TiO 2 , Nb 2 o 5 and Sb 2 o 3 After mixing the mixture and water equal in mass to the mixture, grind it with a sand mill to form a slurry. The particle size D50 value of the slurry is less than 1 μm.

[0078] Pump the slurry into the ball mill tank, then add ZnO and deionized water to the slurry, ZnO and Bi 2 o 3 The mass ratio is 94:0.2, the amount of deionized water added is the same as that of ZnO, followed by ball milling for 24 hours to obtain raw material slurry.

[0079] Add polyvinyl alcohol aqueous solution with a total mass of 18% of the raw material slurry to the raw material slurry, granulate by spray drying, and make the raw material slurry into a dry powder. Then use a press to dry press to obtain a ceramic green body.

[0080] After the ceramic green body is kept at 500°C for 3h, the temperature is raised to 1220°C, and then sintered for 2...

Embodiment 2

[0085] Bi with a mass ratio of 1.2:0.4:0.6:0.2:0.02:0.5:0.1:0.01 2 o 3 , MnCO 3 、Co 3 o 4 , NiO, Al(NO 3 ) 3 、TiO 2 , Nb 2 o 5 and Sb 2 o 3 After mixing the mixture and water equal to the quality of the mixture, use a sand mill to grind to form a slurry with a particle size D50 value of less than 1 μm.

[0086] Pump the slurry into the ball mill tank, then add ZnO and deionized water to the slurry, ZnO and Bi 2 o 3 The mass ratio of ZnO was 97:1.2, the amount of deionized water added was the same as that of ZnO, and then ball milled for 16 hours to obtain raw material slurry.

[0087] Add PVA glue with 20% of the total mass of the raw material slurry to the raw material slurry, mix evenly, and then make a dry powder by spray drying. Then use a press to dry press to obtain a ceramic green body.

[0088] The ceramic green body is kept at 550°C for 2 hours to remove the glue, then the temperature is raised to 1200°C, and then sintered for 4 hours to obtain a low-vol...

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Abstract

The invention discloses a low-voltage varistor ceramic chip which is formed by sintering mixed powder. The mixed powder comprises, by mass, 94-96% of ZnO, 0.2-4% of Bi2O3, 0.1-0.6% of MnCO3, 0.1-2% of Co3O4, 0.1-0.6% of NiO, 0.002-0.02% of Al(NO3)3, 0.1-0.5% of TiO2, 0.01-0.5% of Nb2O5, and 0.01-2% of Sb2O3. With the low-voltage varistor, low-voltage varistor 8 / 20 [mu]s waveform through-flow performance can be well improved, and low-voltage varistor energy-bearing capacity can be improved. The high-energy low-voltage varistor has good lightening resistance. Also, the invention provides a preparation method of the low-voltage varistor ceramic chip and a preparation method of the low-voltage varistor.

Description

technical field [0001] The invention relates to the field of varistor materials, in particular to a low-voltage varistor ceramic sheet and a preparation method thereof, and a preparation method of the low-voltage varistor. Background technique [0002] The varistor is a commonly used electronic component for lightning protection and transient overvoltage protection in circuits. In the industry, varistors with a voltage below 68V are generally defined as low-voltage varistors. Low voltage varistors are generally less capable of withstanding lightning strike energy than high voltage varistors. According to the requirements of the industry standard SJ / T10348-93 and SJ / T10349-93, the maximum flow rate of the MYG2-20K series varistors is only 1000A, and the number of impacts is 2 times, while the high voltage varistors of the same diameter and size The maximum flow rate can reach 4000A, and the number of impacts is 2 times. [0003] Traditional low-voltage varistors have the d...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/622H01C7/12H01C17/00
Inventor 梁戈仁邓佩佳
Owner GUANGDONG FENGHUA ADVANCED TECH HLDG
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