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38results about How to "Improve hole transport efficiency" patented technology

Perovskite solar cell based on PVA modified hole transport layer

The invention discloses a perovskite solar cell based on a PVA modified hole transport layer. The perovskite solar cell comprises a lower transparent electrode layer and an upper electrode layer, wherein five functional layers are clamped between the lower transparent electrode layer and the upper electrode layer; the five functional layers comprise a hole transport layer, a PVA interface modification layer, a perovskite active layer, an electron transfer layer and a buffer layer from bottom to top in sequence; and the hole transport layer, the PVA interface modification layer, the perovskiteactive layer and the electron transfer layer are prepared into a film through a low-temperature solution method. The thin film is prepared by using the low-temperature solution method, the technological conditions are reasonably controlled, and the PVA modification layer is added between a PEDOT:PSS layer and a perovskite layer, the perovskite surface wettability is improved effectively, the holetransport efficiency is improved, the perovskite thin film is obtained continuously and uniformly, the quality of a perovskite absorbed layer is improved, and the obtained perovskite solar cell is high in photovoltaic conversion efficiency and high in stability.
Owner:NANJING UNIV OF POSTS & TELECOMM

Arylamine derivative and organic electroluminescent device thereof

The invention provides an arylamine derivative and an organic electroluminescent device thereof, and relates to the technical field of organic photoelectric materials. According to the invention, a fluorene-derived group and a large steric hindrance group are bonded with a main structure of triarylamine to obtain the arylamine derivative. The arylamine derivative has good hole transporting abilityand thermal stability, is liable to form a film, simple to synthesize and easy to operate, can be applied to the organic electroluminescent device as a hole transporting layer, and can effectively solve problems that the hole transporting material in the organic electroluminescent device is poor in thermal stability, low in possibility of forming a film, low in light-emitting efficiency of deviceand serious in roll-off; and the organic electroluminescent device has the advantages of low driving voltage, high light-emitting efficiency and long service life.
Owner:CHANGCHUN HYPERIONS TECH CO LTD

Aromatic amine compound and organic light-emitting device thereof

The invention provides an aromatic amine compound and an organic light-emitting device thereof, and relates to the technical field of organic photoelectric materials. An aromatic amine main body structure is connected with three substituted or non-substituted 3,5-diphenylbenzene group to obtain the aromatic amine compound, the aromatic amine compound has good hole transport ability, and is high inreflectivity, good in film-forming property and good in thermal stability, synthesis is simple and is easy to operate, the aromatic amine compound can be applied to the organic light-emitting deviceand serves as a hole transport layer and / or a covering layer, the problems that the organic light-emitting device is severe in light loss and low in light emitting efficiency, heat of the device is accumulated, the efficiency of the device is severe in roll-off, and the service life is short are solved, and the organic light-emitting device has the advantages of high light-emitting efficiency andlong service life.
Owner:CHANGCHUN HYPERIONS TECH CO LTD

Light-emitting auxiliary material, preparation method thereof and organic light-emitting device

The invention discloses a light-emitting auxiliary material. The structural general formula of the light-emitting auxiliary material is shown as a chemical formula I. The invention also discloses a preparation method of the light-emitting auxiliary material and an application of the light-emitting auxiliary material in an organic light-emitting device. The organic light-emitting device prepared from the light-emitting auxiliary material provided by the invention has the characteristics of low driving voltage, high light-emitting efficiency and long service life.
Owner:JILIN OPTICAL & ELECTRONICS MATERIALS

Nanometer material and preparation method thereof, and photoelectric device

The present invention discloses a nanometer material and a preparation method thereof, and a photoelectric device. The nanometer material comprises spherical carbon and a MoS2 nanosheet inlaid at thesurface of the spherical carbon. The MoS2 nanosheet is coated with rich hydroxyl and glucosidic bond at the surface of a polysaccharide template to restrict the growth tendency of the MoS2 nanocrystalline in a c direction to prepare an ultrathin MoS2 nanosheet and fully expose the interface active sites of the MoS2 nanosheet so as to improve the hole transport efficiency, and a carbon hybrid structure effectively improves the carrier mobility; and moreover, the nanometer material is taken as hole transport layer, and by employing the synergistic effect of the MoS2 interface active sites and the carbon hybrid structure, the luminous efficiency and performances of the photoelectric device can be improved.
Owner:TCL CORPORATION

Triarylamine derivative, preparation method, application and device thereof

Belonging to the technical field of photoelectric material applied science and technology, the invention in particular relates to a triarylamine derivative, a preparation method and application thereof. The triarylamine derivative provided by the invention adopts triarylamine and fluorenocarbazole as the basic structural unit, and after modification, an asymmetric structure can be obtained so as to compose compounds rich in holes and with high glass transition temperature. When the compounds are used as a hole transport material, compared with the commonly used hole transport material like N,N'-diphenyl-N, N'-bis(3-methylphenyl)-1, 1'-biphenyl-4, 4'-diamine (TPD) in the prior art, the hole transport ability is significantly improved, in OLEDs, the series of compounds have significantly improved starting voltage and glass transition temperature compared with the traditional hole transport materials, and are ideal hole transport materials. In addition, when the series of compounds are used as a light-emitting layer, the efficiency of OLEDs is greatly improved, and the series of compounds are ideal light-emitting layer materials.
Owner:WUHAN SUNSHINE OPTOELECTRONICS TECH CO LTD

Nitrogen-containing compound, and electronic component and electronic device comprising same

The invention relates to a nitrogen-containing compound, and an electronic component and an electronic device comprising the same. The nitrogen-containing compound contains fluorenyl, benzocycloalkyl with rich electron density is introduced to the 9 site of the fluorenyl, and the nitrogen-containing compound is applied to the organic electroluminescent device and can remarkably improve the performance of the device.
Owner:SHAANXI LIGHTE OPTOELECTRONICS MATERIAL CO LTD

Nanometer material and preparation method thereof, and quantum dot light emitting diode

The invention discloses a nanometer material and a preparation method thereof, and a quantum dot light emitting diode. The nanometer material comprises MoO3 nanoparticles and MoS2 nanosheets, and theMoS2 nanosheets are combined on the surfaces of the MoO3 nanoparticles. The MoS2 nanosheets and the MoO3 nanoparticles have a synergistic effect, so that the hole transport efficiency can be improved,and the light emitting efficiency and performances of the quantum dot light emitting diode are improved.
Owner:TCL CORPORATION

Light-emitting auxiliary material and preparation method thereof, light-emitting device and light-emitting device

The invention is suitable for the technical field of materials, and provides a light-emitting auxiliary material, a preparation method thereof, a light-emitting device and a light-emitting device. Derivative groups of furan and the like are connected to a triarylated amine main body structure, the triarylated amine structure has nitrogen atoms containing lone pair electrons, the electrons on the nitrogen atoms are subjected to transition transfer under the action of an external electric field, molecules generate holes, and reverse transfer of the holes is realized; the triarylamine has good hole transport capability, the furan derivative group is a weak electron-donating group, a geometric structure is added on the basis of a non-planar molecular structure to form a compound with a relatively large spatial configuration, and the unique structure of the compound is beneficial to hole transport, so that relatively high hole transport efficiency is obtained.
Owner:JILIN OPTICAL & ELECTRONICS MATERIALS

Quantum dot light-emitting diode and preparation method thereof

The invention discloses a quantum dot light emitting diode and a preparation method thereof. The quantum dot light emitting diode comprises an anode, a cathode, a quantum dot luminescent layer arranged between the anode and the cathode, and a hole transport layer arranged between the anode and the quantum dot luminescent layer, wherein the material of the hole transport layer comprises first p-type zinc sulfide nanoparticles and phosphorene, the surface layers of the first p-type zinc sulfide nanoparticles are doped with a P element, and the phosphorene is combined on the surfaces of the firstp-type zinc sulfide nanoparticles. The surface layer of the first p-type zinc sulfide nanoparticle is doped with the P element, and the P element replaces the S element to form P-type doping, so theeffect of improving empty acupuncture points can be achieved, the hole concentration is improved, and the hole transport performance is further improved.
Owner:TCL CORPORATION

Organic electroluminescent element

[Problem] The purpose of the present invention is to provide an organic EL element in which various materials for an organic EL element, which excel in hole injection / transport performance, electron injection / transport performance, electron blocking performance, stability in a thin film state, and durability, are combined so that properties of each of the materials can be effectively demonstrated,thereby achieving (1) high luminous efficiency and power efficiency, (2) low luminescence starting voltage, (3) low practical driving voltage, and (4) particularly long service life. [Solution] An organic EL element having at least a positive electrode, a hole transportation layer, a light emission layer, an electron transportation layer, and a negative electrode in the stated order, wherein theorganic EL element is characterized in that the hole transportation layer includes an arylamine compound represented by general formula (1), and the electron transportation layer includes a compound having a benzoazole ring structure represented by general formula (2). (1) (In the formula, Ar1-Ar5 may be identical to each other or different from each other, and represent a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, or a substituted or unsubstituted fused polycyclic aromatic group. Ar6-Ar8 may be identical to each other or different from each other, and represent a hydrogen atom, a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, or a substituted or unsubstituted fused polycyclic aromatic group. n1 represents 0, 1, or 2. Ar3 and Ar4 may form a ring with a single bond or may form a ring so as to be bonded via a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom. Ar3 or Ar4 may form a ring with a single bond with a benzene ring to which an Ar3Ar4-N group is bonded, and may form a ring so as to be bonded to each othervia a substituted or unsubstituted methylene group, an oxygen atom, or a sulfur atom.) (2) (In the formula, Ar9 and Ar10 may be identical to each other or different from each other, and represent a hydrogen atom, a deuterium atom, a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, a substituted or unsubstituted fused polycyclic aromatic group, or a substituted or unsubstituted alkyl group. Y1 represents a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, a substituted or unsubstituted fused polycyclic aromatic group, or a substituted or unsubstituted alkyl group. X represents an oxygen atom or a sulfur atom. Z1 and Z2 may be identical to each other or different from each other, and represent a carbon atom or a nitrogen atom).
Owner:HODOGOYA CHEMICAL CO LTD

Organic hole transport material, preparation method and applications thereof

The invention provides an organic hole transport material, a preparation method and applications thereof. The organic hole transport material is one or a plurality of materials selected from triarylamine-thiophene system compounds, wherein the structure is represented by a formula I, R<1>, R<2>, R<3>, R<4>, R<5>, R<6>, R<7>, R<8> and R<9> are respectively and independently selected from a hydrogenatom, a halogen atom, a formyl group, a carboxyl group, a C1-C6 substituted or unsubstituted alkyl group, a C2-C5 substituted or unsubstituted alkenyl group, a C3-C10 substituted or unsubstituted cycloalkyl group and a C6-C10 aryl group. By adopting the organic hole transport material, the problems of poor hole transport capacity, low glass-transition temperature and poor film-forming property ofthe hole transport material in the prior art are solved.
Owner:紫石能源有限公司

Composite material, preparation method thereof and quantum dot light-emitting diode

The invention belongs to the technical field of materials, and particularly relates to a composite material, a preparation method thereof and a quantum dot light-emitting diode. The composite materialcomprises p-type metal oxide nanoparticles and nitrogen-doped graphdiyne dispersed in the p-type metal oxide nanoparticles. Nitrogen-doped graphdiyne is dispersed in the p-type metal oxide nanoparticles, the formed composite material is applied to a hole transport material, and the hole transport efficiency can be improved, so that the light emitting efficiency of a device is improved.
Owner:TCL CORPORATION

Quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode

The invention provides a quantum dot light-emitting diode, which comprises an anode and a cathode which are oppositely arranged, a quantum dot luminescent layer arranged between the anode and the cathode, and a hole transport layer arranged between the anode and the quantum dot luminescent layer, wherein the hole transport layer is made of nickel oxide nanoparticles and carbon quantum dots, and the nickel oxide nanoparticles and the carbon quantum dots are connected through ester groups.
Owner:TCL CORPORATION

Preparation method of thin film and light emitting diode

The invention relates to the technical field of display, and provides a preparation method of a thin film and a light emitting diode. The preparation method of the thin film comprises the steps that dispersion liquid, a matrix and a first inert gas atmosphere are provided, the dispersion liquid comprises a p-type semiconductor material, the first inert gas atmosphere is doped with an aromatic compound, and the aromatic compound can disperse or dissolve the p-type semiconductor material; and performing film forming treatment on the dispersion liquid on a substrate in a first inert gas atmosphere to form a thin film. The thin film prepared by the method has a flat and compact surface, and when the thin film is applied to a hole function layer of a light-emitting diode, the thin film morphology of the hole function layer can be improved, and the interface resistance of the hole function layer and a light-emitting layer can be reduced, so that the hole transmission efficiency of a device is improved, and the hole transmission efficiency and electron transmission efficiency of the device are effectively balanced; and the photoelectric property and the service life of the device are improved.
Owner:TCL CORPORATION

D-A-pi-A-D type fluorescent compound and preparation method thereof

The invention discloses a D-A-pi-A-D type fluorescent compound and a preparation method thereof, wherein the structural formula of the D-A-pi-A-D type fluorescent compound is shown in the specification, wherein methoxytriphenylamine is used as an electron donor D, benzothiadiazole is used as an electron acceptor A, and carbazole is a pi bridge. The D-A-pi-A-D type fluorescent compound disclosed by the invention has the advantages that the energy level is easy to adjust and the pi conjugate length is easy to prolong so as to improve the charge transport property, has good symmetry and higher thermal stability and morphological stability, is an excellent fluorescent compound, and can be applied to perovskite solar cells (PSCs) as a hole transport material.
Owner:INST OF CHEM IND OF FOREST PROD CHINESE ACAD OF FORESTRY

Quantum dot light emitting diode and preparation method thereof

The invention discloses a quantum dot light emitting diode and a preparation method thereof. The preparation method comprises the following steps: forming a hole transport layer on an anode, wherein the hole transport layer comprises a TFB; covering the hole transport layer with a layer of treatment liquid, and carrying out heating treatment; wherein the treatment liquid comprises a halogen element-containing compound; forming a quantum dot light-emitting layer on the processed hole transport layer; and forming a cathode on the quantum dot light-emitting layer to obtain the quantum dot light-emitting diode. The surface of the TFB hole transport layer is post-processed by using the halogen element-containing compound, and due to the existence of halogen, the HOMO energy level of the TFB can be reduced, so that the interface potential barrier between the TFB and the quantum dots is reduced, the transmission capability of holes from the TFB to the quantum dots is improved, the overall hole transport efficiency of the device is improved, and the luminous efficiency of the device is improved; meanwhile, damage to a functional layer in the device is reduced, and the service life of the device is prolonged.
Owner:TCL CORPORATION

Nanometer material and preparation method thereof, and quantum dot light emitting diode

The invention belongs to the technical field of panel display, and particularly relates to a nanometer material and a preparation method thereof, and a quantum dot light emitting diode. The preparation method of the nanometer material provided by the invention comprises the following steps: providing a nickel precursor, a phosphorus precursor, a polymer and a solvent, and dissolving the nickel precursor, the phosphorus precursor and the polymer in the solvent to prepare a spinning solution; carrying out spinning treatment on the spinning solution to prepare precursor fibers; and in an oxygen-containing atmosphere, carrying out high-temperature sintering treatment on the precursor fibers to obtain phosphorus-doped nickel oxide nanofibers. The nickel oxide nanofiber is synthesized by combining spinning treatment and high-temperature sintering technologies, the nickel oxide nanofiber has the characteristics of slender shape and staggered morphology, phosphorus doping modification is synchronously conducted on nickel oxide in a synthesis process, and the electron transmission efficiency of the nickel oxide nanometer material is greatly improved.
Owner:TCL CORPORATION

Organic electroluminescence device and preparation method thereof

The invention discloses an organic electroluminescence device and a preparation method thereof. The organic electroluminescence device comprises a substrate layer, an anode layer, an organic functional layer and a cathode layer which are laminated and combined in turn. The organic functional layer comprises a hole transmission layer and a light-emitting layer which is driven to emit light by an external power supply. The hole transmission layer is laminated and combined between the anode layer and the light-emitting layer. Mass percentage of 12-10% of cuprous iodide is doped in the hole transmission layer. The preparation method of the organic electroluminescence device comprises steps that a substrate is acquired, the anode layer is prepared, the organic functional layer is prepared and the cathode layer is prepared, etc. The organic electroluminescence device is high in light emission efficiency, low in starting voltage and long in the service life. The preparation method of the organic electroluminescence device is simple in technology, conditions are easy to control and product qualified rate is high so that production efficiency is effectively enhanced, and thus the organic electroluminescence device is suitable for industrialized production.
Owner:OCEANS KING LIGHTING SCI&TECH CO LTD +2
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