Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nanometer material and preparation method thereof, and quantum dot light emitting diode

A technology of quantum dot light-emitting and nanomaterials, applied in the field of quantum dot light-emitting devices, can solve the problem of low hole transport efficiency, and achieve the effects of improving hole transport efficiency, simple preparation method, and improving luminous efficiency and performance.

Active Publication Date: 2019-12-03
TCL CORPORATION
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a kind of nano material and preparation method and quantum dot light-emitting diode, aim at solving existing MoO 3 The problem of poor hole transport efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nanometer material and preparation method thereof, and quantum dot light emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Example 1: The following is a detailed introduction by using ammonium molybdate, concentrated nitric acid, and ammonium sulfide to prepare nanomaterials as an example.

[0058] (1) Add 1 g of ammonium molybdate to 20 mL of water, and after it is completely dissolved, add 3 mL of concentrated nitric acid, and stir for 30 min. Then transferred to the hydrothermal reactor, at 200 o The reaction was carried out at C for 24 h, followed by cooling, washing (2 times with water, 1 time with absolute ethanol), followed by cooling at 50 o drying under C to obtain MoO 3 Nanoparticles;

[0059] (2) The dried MoO 3 Nanoparticles, ultrasonically dispersed in 20 mL of mixed solution of water and ethanol (volume ratio of water and ethanol is 2:3), to obtain homogeneous MoO 3 After the nanoparticle dispersion liquid, 0.1 g of ammonium sulfide was added, and the dispersion liquid was transferred to a hydrothermal reactor, at 200 o The reaction was carried out at C for 24 h, followed...

Embodiment 2

[0060] Example 2: The following is a detailed description of the preparation of nanomaterials by using sodium molybdate, concentrated sulfuric acid and thiourea as an example.

[0061] (1) Add 1 g of sodium molybdate to 20 mL of water, and after it is completely dissolved, add 3 mL of concentrated sulfuric acid, and stir for 30 min. Then transferred to the hydrothermal reactor, at 200 o The reaction was carried out at C for 24 h, followed by cooling, washing (2 times with water, 1 time with absolute ethanol), followed by cooling at 50 o drying under C to obtain MoO 3 Nanoparticles;

[0062] (2) The dried MoO 3 Nanoparticles, ultrasonically dispersed in 20 mL of mixed solution of water and ethanol (volume ratio of water and ethanol is 2:3), to obtain homogeneous MoO 3 After the nanoparticle dispersion, 0.1 g of thiourea was added, and the dispersion was transferred to a hydrothermal o The reaction was carried out at C for 24 h, followed by cooling, washing (2 times with wa...

Embodiment 3

[0063] Embodiment 3: The following takes the preparation of nanomaterials by using potassium molybdate, concentrated hydrochloric acid and thioacetamide as an example to introduce in detail.

[0064] (1) Add 1 g of potassium molybdate to 20 mL of water, and after it is completely dissolved, add 3 mL of concentrated hydrochloric acid, and stir for 30 min. Then transferred to the hydrothermal reactor, at 200 o The reaction was carried out at C for 24 h, followed by cooling, washing (2 times with water, 1 time with absolute ethanol), followed by cooling at 50 o drying under C to obtain MoO 3 Nanoparticles;

[0065] (2) The dried MoO 3 Nanoparticles, ultrasonically dispersed in 20 mL of mixed solution of water and ethanol (volume ratio of water and ethanol is 2:3), to obtain homogeneous MoO 3 After the nanoparticle dispersion liquid, 0.1 g of thioacetamide was added, and the dispersion liquid was transferred to a hydrothermal reaction kettle. o The reaction was carried out at...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a nanometer material and a preparation method thereof, and a quantum dot light emitting diode. The nanometer material comprises MoO3 nanoparticles and MoS2 nanosheets, and theMoS2 nanosheets are combined on the surfaces of the MoO3 nanoparticles. The MoS2 nanosheets and the MoO3 nanoparticles have a synergistic effect, so that the hole transport efficiency can be improved,and the light emitting efficiency and performances of the quantum dot light emitting diode are improved.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting devices, in particular to a nanometer material, a preparation method and a quantum dot light-emitting diode. Background technique [0002] In current quantum dot light-emitting diodes, ITO is often used as a transparent electrode. While PEDOT:PSS is usually used to modify the surface of ITO as an anode buffer layer. However, due to the acidity of PEDOT:PSS itself, the performance of quantum dot light-emitting diodes will be degraded. To solve this problem, some people began to develop new anode buffer layers to replace PEDOT:PSS. Among them, transition metal oxides (WO 3 , MoO 3 , NiO, Cu 2 O, ReO 3 and V 2 O 5 ) is used as an anode buffer layer in many quantum dot light-emitting diodes and achieves good performance. In particular, molybdenum oxide has a deep electron energy level and efficient hole injection, and some effects have been achieved. [0003] As a transition metal m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54B82Y30/00
CPCB82Y30/00H10K50/115H10K50/15
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com