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Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of low luminous efficiency, low efficiency of hole transport layer, and inability to balance electron transport efficiency, etc., to improve Hole transport performance, improvement of hole transport efficiency, effect of improving hole sites

Active Publication Date: 2020-06-02
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem that the efficiency of the hole transport layer in the existing quantum dot light-emitting diode is too low to balance with the electron transport efficiency, resulting in The problem of low luminous efficiency

Method used

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  • Quantum dot light-emitting diode and preparation method thereof

Examples

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Embodiment 1

[0052] Embodiment 1: The following is a detailed introduction by using zinc sulfide nanorods and black phosphorus nanoparticles to prepare a mixed material comprising first p-type zinc sulfide nanoparticles and phosphorene as an example:

[0053] 1) Put ZnS nanorods in NH 3 Heated to 300 degrees Celsius in the atmosphere and kept warm for 1 hour;

[0054] 2) Disperse black phosphorus nanoparticles in N,N-dimethylformamide (DMF) (10mg / mL), peel off thin layer and monolayer phosphorene by ultrasonic, remove it with a 10μm filter after ultrasonication for 30 minutes large particles, and add NH to the supernatant 3 The treated zinc sulfide nanorods were stirred under nitrogen bubbling for 20 minutes to obtain a mixed solution of black phosphorus zinc sulfide;

[0055] 3) The black phosphorus zinc sulfide mixed solution is dried, ground, and then placed in a muffle furnace for calcination at 600 degrees Celsius for 2 hours to obtain a mixed material comprising the first p-type zi...

Embodiment 2

[0056] Embodiment 2: The following is an example of preparing a mixed material comprising the first p-type zinc sulfide nanoparticle and phosphorene by using zinc sulfide nano-microspheres and black phosphorus nanoparticles as an example:

[0057] 1) Place the ZnS nanospheres in NH 3 Heated to 300 degrees Celsius in the atmosphere and kept warm for 1 hour;

[0058] 2) Disperse black phosphorus nanoparticles in dimethyl sulfoxide (DMSO) (10 mg / mL), peel off thin-layer and single-layer phosphorene by ultrasonication, remove large particles with a 10 μm filter after ultrasonication for 30 minutes, and remove large particles. Add NH to the supernatant 3 The treated zinc sulfide nano-microspheres were stirred under nitrogen bubbling for 20 minutes to obtain a mixed solution of black phosphorus zinc sulfide;

[0059] 3) The black phosphorus zinc sulfide mixed solution is dried, ground, and then placed in a muffle furnace for calcination at 600 degrees Celsius for 2 hours to obtain...

Embodiment 3

[0060] Embodiment 3: The following takes the use of zinc sulfide nanosheets and black phosphorus nanoparticles to prepare a mixed material comprising first p-type zinc sulfide nanoparticles and phosphorene as an example to introduce in detail:

[0061] 1) Place ZnS nanosheets in NH 3 Heated to 300 degrees Celsius in the atmosphere and kept warm for 1 hour;

[0062] 2) Black phosphorus nanoparticles were dispersed in methylformamide (NMF) (10 mg / mL), and the thin-layer and single-layer phosphorene was peeled off by ultrasonic. NH was added to the supernatant 3 The treated zinc sulfide nanosheets were stirred under nitrogen bubbling for 20 minutes to obtain a mixed solution of black phosphorus and zinc sulfide;

[0063] 3) The black phosphorus zinc sulfide mixed solution is dried and ground, and then placed in a muffle furnace for calcination at 600 degrees Celsius for 2 hours to obtain a mixed material comprising the first p-type zinc sulfide nanoparticles and phosphorene.

...

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Abstract

The invention discloses a quantum dot light emitting diode and a preparation method thereof. The quantum dot light emitting diode comprises an anode, a cathode, a quantum dot luminescent layer arranged between the anode and the cathode, and a hole transport layer arranged between the anode and the quantum dot luminescent layer, wherein the material of the hole transport layer comprises first p-type zinc sulfide nanoparticles and phosphorene, the surface layers of the first p-type zinc sulfide nanoparticles are doped with a P element, and the phosphorene is combined on the surfaces of the firstp-type zinc sulfide nanoparticles. The surface layer of the first p-type zinc sulfide nanoparticle is doped with the P element, and the P element replaces the S element to form P-type doping, so theeffect of improving empty acupuncture points can be achieved, the hole concentration is improved, and the hole transport performance is further improved.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting devices, in particular to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes are expected to become a new generation of excellent display technologies due to their high luminous efficiency, high color purity, narrow light-emitting spectrum, and adjustable emission wavelength. The main problem is that the efficiency of the hole transport layer in the device structure is too low, which cannot be balanced with the electron transport efficiency, resulting in low luminous efficiency. [0003] Therefore, the existing technology still needs to be improved and developed. SUMMARY OF THE INVENTION [0004] In view of the above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide a quantum dot light-emitting diode and a preparation method thereof, aiming at solving the problem ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/155H10K71/00
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION
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