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Hole transport material and preparation method thereof, and quantum dot light-emitting diode

A hole transport material and quantum dot luminescence technology, applied in the field of quantum dots, can solve problems such as low transport performance and poor stability

Active Publication Date: 2021-07-02
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, provide a hole transport material and its preparation method and quantum dot light-emitting diodes, aiming to solve the technical problems of low transport performance and poor stability of the existing hole transport materials

Method used

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  • Hole transport material and preparation method thereof, and quantum dot light-emitting diode

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preparation example Construction

[0023] On the other hand, an embodiment of the present invention also provides a method for preparing a hole transport material, comprising the following steps:

[0024] S01: Provide zinc sulfide nanoparticles and nano-scale carbon nitride;

[0025] S02: Dissolving the zinc sulfide nanoparticles and nanoscale carbon nitride in a solvent to obtain a precursor solution;

[0026] S03: Deposit the precursor solution on the substrate, and perform annealing treatment to obtain a hole transport material.

[0027] The preparation method of the hole transport material provided by the embodiment of the present invention is simple and feasible, suitable for large-scale and large-scale preparation, and finally obtains a hole transport material with a suitable band gap and strong hole transport ability, which can be used to prepare QLED devices. The hole transport layer can significantly improve the luminous efficiency, luminous stability and service life of the device.

[0028] Further,...

Embodiment 1

[0048] Using zinc sulfate, sodium sulfide, and carbon nitride nanospheres to prepare hole transport materials, the specific steps are as follows:

[0049] 1) Add an appropriate amount of zinc sulfate to ethanol to form a 1.0mol / L zinc sulfate solution, and continue heating and stirring at 50 degrees Celsius; then add an appropriate amount of sodium sulfide to ethanol to form a 1.0mol / L sodium sulfide solution. Stir continuously under heating;

[0050] 2) Inject the sodium sulfide solution into the zinc sulfate solution so that the molar ratio Zn 2+ :S 2- =1:1, continue to stir at 50 degrees Celsius for 1 hour;

[0051] 3) After cooling the mixed solution to room temperature and centrifuging, remove the supernatant, redisperse the lower solid with ethanol and wash it several times, then dissolve it in ethanol to form a zinc sulfide ethanol solution;

[0052] 4) Add carbon nitride nanospheres to the zinc sulfide ethanol solution to make the molar ratio Zn:C 3 N 4 =1:0.02, a...

Embodiment 2

[0055] Using zinc chloride, sulfur powder, and carbon nitride nanorods to prepare hole transport materials, the specific steps are as follows:

[0056] 1) Add an appropriate amount of zinc chloride to acetone to form a 1.0mol / L zinc chloride solution, and continue heating and stirring at 50 degrees Celsius; add an appropriate amount of sulfur powder to acetone to form an acetone solution of 1.0mol / L sulfur. Continue heating and stirring at 50 degrees Celsius;

[0057] 2) Inject the acetone solution of sulfur into the zinc chloride solution so that the molar ratio Zn 2+ :S 2- =1:1, continue to stir at 50 degrees Celsius for 1 hour;

[0058] 3) After cooling the mixed solution to room temperature and centrifuging, remove the supernatant, redisperse the lower solid with acetone and wash it several times, then dissolve it in acetone to form a zinc sulfide acetone solution;

[0059] 4) Add carbon nitride nanorod powder to the zinc sulfide acetone solution to make the molar ratio...

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Abstract

The invention belongs to the technical field of quantum dots, and in particular relates to a hole transport material, a preparation method thereof and a quantum dot light-emitting diode. The hole transport material includes zinc sulfide nanoparticles and nanoscale carbon nitride doped between the zinc sulfide nanoparticles. Doping nano-scale carbon nitride into zinc sulfide nanoparticles can obtain a hole-transporting material with a suitable band gap and strong hole-transporting ability. This hole-transporting material is used to prepare the hole-transporting layer of a QLED device. The luminous efficiency, luminous stability and service life of the device can be significantly improved.

Description

technical field [0001] The invention belongs to the technical field of quantum dots, and in particular relates to a hole transport material, a preparation method thereof and a quantum dot light-emitting diode. Background technique [0002] QLED is the abbreviation of "Quantum Dot Light Emitting Diode", that is, quantum dot light emitting diode. In the field of display technology, quantum dot light emitting diode has great development potential in terms of spectral characteristics, spectral purity, and color rendering performance. QLED devices usually consist of a carrier transport layer and a quantum dot light-emitting layer in the form of a sandwich, in which the performance of the carrier transport layer will significantly affect important properties such as the luminous efficiency and lifetime of the device. At present, the transport performance of the hole transport layer is much lower than that of the electron transport layer. The electron-hole electron transport effici...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/26H01L33/06B82Y30/00
CPCB82Y30/00H01L33/06H01L33/26
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION
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