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A kind of nanometer material and its preparation method and quantum dot light-emitting diode

A technology of quantum dot luminescence and nanomaterials, which is applied in the field of quantum dot light-emitting devices, can solve the problem of low hole transmission efficiency, achieve the effects of improving hole transmission efficiency, simple preparation method, and improving luminous efficiency and performance

Active Publication Date: 2021-03-23
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a kind of nano material and preparation method and quantum dot light-emitting diode, aim at solving existing MoO 3 The problem of poor hole transport efficiency

Method used

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  • A kind of nanometer material and its preparation method and quantum dot light-emitting diode

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Effect test

Embodiment 1

[0057] Embodiment 1: The following uses ammonium molybdate, concentrated nitric acid, and ammonium sulfide to prepare nanomaterials as an example for detailed introduction.

[0058] (1) Add 1 g of ammonium molybdate to 20 mL of water, wait for complete dissolution, add 3 mL of concentrated nitric acid, and stir for 30 min. Then transferred to the hydrothermal reactor, at 200 o C for 24 h, followed by cooling and washing (washing twice with water, once with absolute ethanol), at 50 o Drying at C yields MoO 3 nanoparticles;

[0059] (2) The dried MoO 3 Nanoparticles were ultrasonically dispersed in 20 mL of a mixed solution of water and ethanol (the volume ratio of water and ethanol was 2:3), until a homogeneous MoO 3 After the nanoparticle dispersion, 0.1 g of ammonium sulfide was added, and the dispersion was transferred to a hydrothermal reactor, at 200 o C for 24 h, followed by cooling and washing (washing twice with water, once with absolute ethanol), at 50 o Dry at C...

Embodiment 2

[0060] Embodiment 2: The following takes the preparation of nanomaterials by using sodium molybdate, concentrated sulfuric acid and thiourea as an example to introduce in detail.

[0061] (1) Add 1 g of sodium molybdate to 20 mL of water, wait for complete dissolution, add 3 mL of concentrated sulfuric acid, and stir for 30 min. Then transferred to the hydrothermal reactor, at 200 o C for 24 h, followed by cooling and washing (washing twice with water, once with absolute ethanol), at 50 o Drying at C yields MoO 3 nanoparticles;

[0062] (2) The dried MoO 3 Nanoparticles were ultrasonically dispersed in 20 mL of a mixed solution of water and ethanol (the volume ratio of water and ethanol was 2:3), until a homogeneous MoO 3 After the nanoparticle dispersion, 0.1 g of thiourea was added, and the dispersion was transferred to a hydrothermal reactor, at 200 o C for 24 h, followed by cooling and washing (washing twice with water, once with absolute ethanol), at 50 o Dry at C t...

Embodiment 3

[0063] Embodiment 3: The following takes the preparation of nanomaterials by using potassium molybdate, concentrated hydrochloric acid and thioacetamide as an example to introduce in detail.

[0064] (1) Add 1 g of potassium molybdate to 20 mL of water, wait for complete dissolution, add 3 mL of concentrated hydrochloric acid, and stir for 30 min. Then transferred to the hydrothermal reactor, at 200 o C for 24 h, followed by cooling and washing (washing twice with water, once with absolute ethanol), at 50 o Drying at C yields MoO 3 nanoparticles;

[0065] (2) The dried MoO 3 Nanoparticles were ultrasonically dispersed in 20 mL of a mixed solution of water and ethanol (the volume ratio of water and ethanol was 2:3), until a homogeneous MoO 3 After the nanoparticle dispersion, add 0.1 g of thioacetamide, and transfer the dispersion to a hydrothermal reaction kettle, at 200 o C for 24 h, followed by cooling and washing (washing twice with water, once with absolute ethanol), ...

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Abstract

The invention discloses a nano material, a preparation method and a quantum dot light-emitting diode. The nano material includes: MoO 3 Nanoparticles and MoS 2 nanosheets, the MoS 2 nanosheets incorporated in the MoO 3 nanoparticle surface. MoS 2 Nanosheets and MoO 3 The synergistic effect of nanoparticles can improve the hole transport efficiency, thereby improving the luminous efficiency and performance of quantum dot light-emitting diodes.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting devices, in particular to a nanometer material, a preparation method and a quantum dot light-emitting diode. Background technique [0002] In current quantum dot light-emitting diodes, ITO is usually used as a transparent electrode. PEDOT:PSS is usually used to modify the surface of ITO as an anode buffer layer. However, due to the acidity of PEDOT:PSS itself, the performance of quantum dot light-emitting diodes will be attenuated. In order to solve this problem, some people began to develop a new anode buffer layer to replace PEDOT:PSS. Among them, transition metal oxides (WO 3 、MoO 3 , NiO, Cu 2 O, ReO 3 and V 2 o 5 ) is used as an anode buffer layer in many quantum dot light-emitting diodes, and has achieved good performance. In particular, molybdenum oxide has a deep electron level state and efficient hole injection, and some effects have been obtained. [0003] As a transit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54B82Y30/00
CPCB82Y30/00H10K50/115H10K50/15
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
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