The invention discloses a
semiconductor packaging method of
wafer level
silicon-based through hole, belonging to the field of
semiconductor packaging. The packaging method substantially comprises the following steps: 1, making a cavity structure on a cover plate; 2, bonding the front surface of the cover plate with the front surface of a
wafer through a bonding
machine; 3,
grinding the rear surface of the
wafer by a grinder, and implementing a stress
plasma etching on the rear surface of the wafer; 4, removing all
silicon belonging to a scribe line region starting from the rear surface of the wafer; 5,
etching the rear surface of the wafer in order to form
silicon through holes, and exposing a bonding pad; 6, making
passivation layers,
metal layers and
solder mask layers sequentially in the rear surface of the wafer and the silicon through holes, so as to compose a redistributed circuit layer, thereby conducting the solder pad to a designated
solder ball position on the rear surface of the wafer; 7, making solder balls and
cutting along the scribe line. By the implementation of the
semiconductor packaging method of wafer level silicon-based through hole, the
yield rate of wafer
cutting technique is increased, the
stress level in
package structure is reduced, and the boundary dimension of the
package structure is decreased.