35results about How to "Improve capacitance effect" patented technology

A Metal-Insulator-Metal (MIM) capacitor structure and method of fabricating the same in an integrated circuit improve capacitance density in a MIM capacitor structure by utilizing a sidewall spacer extending along a channel defined between a pair of legs that define portions of the MIM capacitor structure. Each of the legs includes top and bottom electrodes and an insulator layer interposed therebetween, as well as a sidewall that faces the channel. The sidewall spacer incorporates a conductive layer and an insulator layer interposed between the conductive layer and the sidewall of one of the legs, and the conductive layer of the sidewall spacer is physically separated from the top electrode of the MIM capacitor structure. In addition, the bottom electrode of a MIM capacitor structure may be ammonia plasma treated prior to deposition of an insulator layer thereover to reduce oxidation of the electrode. Furthermore, a multi-rate etching process may be used to etch the top electrode and insulator layer of an MIM structure, using a first, higher rate to perform an anisotropic etch up to a point proximate an interface between the conductive and dielectric materials respectively defining the top electrode and insulator layer of the MIM structure, and then using a second, lower rate to perform an anisotropic etch to a point proximate an etch stop layer defined on the bottom electrode of the MIM structure.

A low inductance via arrangement for multilayer ceramic (MLC) substrates is provided. With the MLC substrate and via arrangement of the illustrative embodiments, the via-field inductance for a given contact pad array is reduced. This reduction is achieved by the introduction of T-jogs and additional vias. These T-jogs and additional vias form additional current paths that cause additional parallel inductances that reduce the via-field inductance. In one illustrative embodiment, the additional T-jogs and vias are added to a center portion of a contact pad array. The T-jogs are comprised of two jogs in a wiring layer of the MLC, each jog being toward a via associated with an adjacent contact pad in the contact pad array. These additional T-jogs and vias form additional current loops parallel to the existing ones which thus, reduce the total inductance of the via-field.

An electrical receptacle connector includes an insulated housing, upper-row receptacle terminals, and lower-row receptacle terminals. The insulated housing includes a base portion and a tongue portion extended from one side of the base portion. The tongue portion has an upper surface, a lower surface, and a front lateral surface. The lower-row receptacle terminals correspond to the upper-row receptacle terminals and include signal terminals which include high speed transmitting terminals. Each of the high speed transmitting terminals includes a bending portion, an extension portion, and a cutout portion. The bending portion is extended upward from the front end of the flat contact portion and inserted into the tongue portion, the extension portion is extended forward from the top of the bending portion toward the front lateral surface, and the cutout portion is defined at the extension portion and near to the bending portion.

The invention discloses a preparation method for iron-doped bismuth tungstate. The method comprises the following steps: bismuth nitrate pentahydrate is added to a citric acid-containing aqueous solution to form a metal-citrate complex; after 10 minutes of vigorous stirring, sodium tungstate dehydrate and sodium bicarbonate are added to the above solution; after further stirring for 5 minutes, thefilling degree in a reactor is 50%, the heat is preserved for 15 h under the temperature of 180 DEG C, and cooling to room temperature is carried out; the taken reactant is centrifugally cleaned withalcohol and distilled water three times each, and a flower-like bismuth tungstate material is obtained; DMF and distilled water with a volume ratio of 8 to 2 are measured and mixed as a mixed solvent; the above bismuth tungstate and ferrous chloride tetrahydrate are added to the mixed solvent; after further stirring for 5 minutes, the filling degree in the reactor is 50%, the heat is preserved for 2 h under the temperature of 100 DEG C, and cooling to room temperature is carried out; the taken reactant is centrifugally cleaned with alcohol and distilled water three times each, and an iron-doped bismuth tungstate material is obtained.