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An application of litmus as a dielectric layer of memristor devices

A memristive device and dielectric layer technology, applied in electrical components and other directions, can solve the problems of high price, complex process, high preparation cost, etc., and achieve excellent performance, low manufacturing cost, good memristive effect and capacitance effect.

Inactive Publication Date: 2019-01-18
SOUTHWEST JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the extraction of silk, egg white, protein, and glucose is difficult and complicated; while chitosan and DNA are expensive and the cost of device preparation is too high

Method used

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  • An application of litmus as a dielectric layer of memristor devices
  • An application of litmus as a dielectric layer of memristor devices
  • An application of litmus as a dielectric layer of memristor devices

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Embodiment Construction

[0027] In order to make the purpose of the present invention, technical solutions and advantages clearer, the present invention will be described in further detail below in conjunction with accompanying drawing:

[0028] The present invention will be described in detail below with reference to the accompanying drawings: an application of litmus as a dielectric layer of a memristive device, which specifically includes the following steps:

[0029] Step 1, the extracted litmus is cleaned and dried in a drying box for subsequent use;

[0030] Step 2, crushing the dried litmus, grinding, filtering through a sieve to obtain micron-sized litmus powder, and storing in a dry environment;

[0031] Step 3, using deionized water to dilute 0.03ml of 37% concentrated hydrochloric acid (HCl) solution with a density of 1.19g / ml to obtain a reagent with a total volume of 1L and a pH value of 0.001mol / L, and then 0.04g sodium hydroxide (NaOH) solid is dissolved and diluted with deionized wate...

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Abstract

The invention provides an application of litmus as a dielectric layer of memristor device, which relates to the technical field of organic material application. Pulverizing dried litmus, grinding, sieving and filtering to obtain micron litmus powder, diluting concentrated hydrochloric acid (HCl) solution with deionized water, or dissolving sodium hydroxide (NaOH) solid with deionized water and diluting solution; Preparing mixed solution, taking litmus powder, stirring litmus powder with mass percentage of 50% - 55% and diluted solution with mass percentage of 45% - 50%, and preparing mixed solution; A conductive glass FTO is used as a substrate, and the mixed solution obtained in the step 4 is spin-coated on the conductive side of the substrate respectively to form a thin film as a dielectric layer of the device by a spin-coating method; Putting the substrate with dielectric layer prepared in the step 5 into a drying oven at 40 DEG C for drying for more than 12 hours; Silver was deposited on the surface of substrate dielectric layer by DC sputtering process as the upper electrode of the device, and the memristor device with silver / litmus / FTO structure was fabricated.

Description

technical field [0001] The invention relates to the technical field of organic material application. Background technique [0002] With the rapid development of production technology and the increasing popularity of the information age, multifunctional integrated electronic devices are becoming more and more important. A wide variety of storage devices have emerged and currently used memories can be classified into two categories, ie, volatile random access memories and nonvolatile memories. At the same time, the demand for data storage in non-volatile memory devices is also growing rapidly. It must be admitted that non-volatile storage devices will be an important part of future storage systems. In addition, organic nonvolatile resistive switching devices have attracted extensive attention of researchers in recent years. Organic nonvolatile resistive switching devices have many unique advantages, including simple device structure, good stretchability, lower fabrication c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/021
Inventor 陈元正朱守辉吕旖旎毛双锁孙柏夏钰东赵勇
Owner SOUTHWEST JIAOTONG UNIV
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