36results about How to "Filling space" patented technology

A structural reinforcement for a hollow member comprising a rigid reinforcing member having a shape that substantially conforms to the cross section of the hollow member to be reinforced with an expandable adhesive material over at least a portion of the surface of the structural reinforcement having one or more extensions on its external surface which control and direct the direction in which the adhesive material expands to bond the reinforcing member to the internal surface of the hollow member, some of the extensions also provide improved reinforcement.

A memory card and method for fabricating the same are disclosed, which includes mounting and electrically connecting at least a chip to a circuit board unit having a predefined shape of a memory card; attaching a thin film to the surface of the circuit board unit opposed to the surface with the chip mounted thereon; covering the circuit board unit and the thin film by a mold so as to form a mold cavity having same shape as the circuit board unit but bigger size; filling a packaging material in the mold cavity so as to form an encapsulant encapsulating the chip and outer sides of the circuit board unit, thus integrally forming a memory card having the predefined shape. The present invention eliminates the need to perform a shape cutting process by using water jet or laser as in the prior art, thus reducing the fabricating cost and improving the fabricating yield.

A display device including: a first substrate with a pixel switch and drivers mounted thereon; a second substrate disposed in facing relation to the first substrate; a material layer held between the first substrate and the second substrate and having peripheral edges sealed by a seal member, the material layer having an electrooptical effect; and a semiconductor chip mounted as a COG component on the first substrate, the semiconductor chip having a control system configured to control the drivers; wherein the semiconductor chip having a thickness equal to the total thickness of the seal member and the second substrate or larger than the thickness of the seal member and smaller than the total thickness.

A flexible trash guard for a sickle bar mowing apparatus that sits between the hold-down and the stud plate, thus eliminating the “hair pinning” of crop matter in the opening of the hold-down clip where the stud passes through the opening.

The present invention provides an implantable electrode with increased stability having a clustered structure wherein the surface of the electrode is covered with a material comprising openings which are filled with sticks or posts.The present invention provides an implantable electrode with increased stability wherein the surface is of the electrode comprises mesh grids which are filled with sticks which are filed with a conducting or insulating material.The present invention provides a method of manufacturing an electrode with increased stability, comprising: depositing a metal layer on an base layer; applying photoresist layer on the metal layer; patterning the photoresist layer providing openings; electroplating the openings with metal; removing the photoresist layer leaving spaces; and filling the spaces with polymer.The present invention provides A method of manufacturing an electrode with increased stability, comprising: depositing a metal layer on an base layer; applying a polymer layer on the metal layer; applying photoresist layer on the polymer layer; patterning the photoresist layer providing openings; electroplating the openings with metal; and removing the photoresist layer.

An isothermal chemical reactor (1) comprising an array of radially arranged plate-like heat exchange elements (11) inside a reaction space, each element comprising feeding and collecting ducts and a bundle of parallel tubes (15) defining channels (12) for a heat exchange medium, the tubes (15) having an elongated cross section and being disposed with a variable orientation relative to the radial direction of the reactor, so that inner tubes near the axis of the reactor have the cross-section major axis aligned with said radial direction, and outer tubes have the same axis perpendicular to the radial direction. The preferred structure of a plate-like heat exchange element is also disclosed.

Disclosed herein is a display device including: a first substrate with a pixel switch and drivers mounted thereon; a second substrate disposed in facing relation to the first substrate; a material layer held between the first substrate and the second substrate and having peripheral edges sealed by a seal member, the material layer having an electrooptical effect; and a semiconductor chip mounted as a COG component on the first substrate, the semiconductor chip having a control system configured to control the drivers; wherein the semiconductor chip having a thickness equal to the total thickness of the seal member and the second substrate or larger than the thickness of the seal member and smaller than the total thickness.

A method for manufacturing a semiconductor device comprises the steps of forming a seed over the insulating film by introducing hydrogen and a deposition gas into a first treatment chamber under a first condition and forming a microcrystalline semiconductor film over the seed by introducing hydrogen and the deposition gas into a second treatment chamber under a second condition: a second flow rate of the deposition gas is periodically changed between a first value and a second value; and a second pressure in the second treatment chamber is higher than or equal to 1.0×102 Torr and lower than or equal to 1.0×103 Torr.

A first side surface of post of the first stripe is formed so that a plane which is most parallel to the first side surface among low-index planes of the growing Group III nitride semiconductor is a m-plane (10-10), and a first angle between the first lateral vector obtained by orthogonally projecting a normal vector of the first side surfaces to the main surface and a m-axis projected vector obtained by orthogonally projecting a normal vector of the m-plane of the growing semiconductor to the main surface is from 0.5° to 6°. A second side surface of post of the second stripe is formed so that a plane which is most parallel to the second side surface among low-index planes of the growing semiconductor is an a-plane (11-20), and a second angle between the second lateral vector and an a-axis projected vector of the a-plane is from 0° to 10°.

To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed.

The subject invention provides devices and methods for alleviating discomfort associated with neuroma formation. The devices and methods of the invention effectively use the body's natural response of reconstructing implanted biomaterials to minimize the size of isolate, and protect a neuroma. In preferred embodiments, the subject device is a cylindrical cap, wherein the internal chamber of the cylindrical cap physically partitions the nerve to enable an arrangement of nerve fibers (as opposed to haphazardly arranged nerve fibers often produced in neuromas). Tabs arranged on the outside of the cap can be used to manipulate the cap into place on a nerve. The open end can also be configured with flaps that can be used to widen the open end for easier insertion of the nerve into the cap. In addition, the cap's material remodels into a tissue cushion after implantation, which protects the neuroma from being stimulated and inducing pain.

A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less.