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32results about How to "Few characteristic" patented technology

Malleable paste for filling bone defects

The invention is directed toward a malleable bone putty and a flowable gel composition for application to a bone defect site to promote new bone growth at the site which comprises a new bone growth inducing compound of demineralized lyophilized allograft bone powder. The bone powder has a particle size ranging from about 100 to about 850 microns and is mixed in a high molecular weight hydrogel carrier, the hydrogel component of the carrier ranging from about 0.3 to 3.0% of the composition and having a molecular weight of about at least 10,000 Daltons. The composition contains about 25% to about 40% bone powder and can be additionally provided with BMP's and a sodium phosphate buffer.
Owner:MUSCULOSKELETAL TRANSPLANT FOUND INC

Magnetic memory and method of manufacturing the memory

A magnetic memory includes a substrate, a lower portion structure of a magnetic element, an upper portion structure of the magnetic element, and a sidewall insulating film. The lower portion structure of the magnetic element is a portion of the magnetic element provided on the upside of the substrate. The upper portion structure of the magnetic element is a remaining portion of the magnetic element provided on the upside of the lower portion structure of the magnetic element. The sidewall insulating film is provided to surround the upper portion structure of the magnetic element and is formed of an insulating material. That is, the lower portion structure of the magnetic element is formed from one layer or a plurality of layers on a side close to the substrate, among a plurality of laminated films of the magnetic element provided on the upside of the substrate. The upper portion structure of the magnetic element is formed from layers other than the lower portion structure of the magnetic element among the plurality of laminated films of the magnetic element. Also, the side of the upper portion structure of the magnetic element is electrically insulated from other portions by the sidewall insulating film. That is, it is possible to avoid a short-circuit.
Owner:NEC CORP

Radio channel aggregation and segmentation

Multiple streams from multiple circuit paths are Block-TDM (Block-Time-Division-Multiplexing) aggregated into a single stream that passes via a single path through processing circuitry capable of handling the aggregated signal. The cost of providing redundant processing circuitry is avoided. After processing in the single path, the resulting signal is Block-TDM de-aggregated to generate multiple streams. Each output stream is substantially the same as if its corresponding input stream had been processed in a separate path using separate processing circuitry. The path-sharing technique is usable to pass multiple streams from multiple radio receivers through one superior Delta-Sigma ADC (DSADC) as opposed to using multiple flat ADCs to process information from the multiple receivers. In one example, the DSADC can be used because the aggregation is Block-TDM-based and the de-aggregator involves a digital low pass filter. In another example, the de-aggregator involves a decoder and the aggregator involves a precoder.
Owner:QUALCOMM INC

Silicon light emitting device and method of fabricating same

A light emitting device (10) comprises a body (11) comprising a substrate (12) of a p-type semiconductor material. The substrate has an upper surface (14) and having formed therein on one side of the upper surface and according to a bulk semi-conductor fabrication process utilizing lateral active area isolation techniques: a first n+-type island (16) to form a first junction (24) between the first island and the substrate; and a second n+-type island (18) spaced laterally from the first island (16). The substrate provides a laterally extending link (20) between the islands having an upper surface. The upper surface of the link, an upper surface of the island (16) and an upper surface of the island (18) collectively form a planar interface (21) between the body (11) and an isolation layer (19) of the device. The device comprises a terminal arrangement to apply a reverse bias to the first junction, to cause the device to emit light. The device is configured to facilitate the transmission of the emitted light.
Owner:INSIAVA

Ceramic component and method of manufacturing the same

InactiveUS20090108984A1Increase bonding strengthDecrease in thickness deviationFixed capacitor dielectricCurrent responsive resistorsOxideDiffusion bonding
Provided are a ceramic component and a method of manufacturing the ceramic component. The ceramic component includes a previously fired insulation ceramic base, a functional ceramic sheet bonded to the insulation ceramic base by a diffusion bonding layer having an anchoring structure, internal electrodes embedded into the functional ceramic sheet, and external electrodes connected to the internal electrodes. A functional ceramic paste corresponding to the functional ceramic sheet is applied to the insulation ceramic base and is dried to form a functional ceramic film. The functional ceramic film is pressed against the insulation ceramic base to anchor functional ceramic film into the insulation ceramic base for sure attachment. The functional ceramic film is fired to allow functional oxide materials included in the functional ceramic film to permeate the insulation ceramic base by solid diffusion to form the diffusion bonding layer and to change the functional ceramic film into the functional ceramic sheet.
Owner:JOINSET

Gas flow measuring apparatus

A gas flow measuring apparatus includes a detecting element including a heating resistor and a thermo-sensitive resistor disposed on a diaphragm and external terminals connected to the heating resistor and the thermo-sensitive resistor, and a flow rate detecting unit which controls heating temperature of the heating resistor and which detects a flow rate of gas according to a change in a resistance value of the heating resistor or the thermo-sensitive resistor. The detecting element includes a resistor area in which the heating resistor and the thermo-sensitive resistor are formed and a fixed section area in which the external terminals are formed. A stress mitigating unit is formed between the resistor area and the fixed section area.
Owner:HITACHI LTD

Method for driving liquid crystal display device

A liquid crystal material is prevented from being degraded by a voltage to control the shift of the threshold voltage which is applied to a back gate on the same conductive film as a pixel electrode. A liquid crystal display device includes a pixel circuit including a pixel electrode which applies an electric field to a liquid crystal layer; and a driver circuit including a transistor including a first gate and a second gate with a semiconductor film interposed therebetween. The transistor overlaps with the liquid crystal layer. A signal for controlling on / off of the transistor is input to the first gate. A signal for applying a first voltage is input to the second gate in a gate line selection period. A signal for alternately applying the first voltage and a second voltage is input to the second gate in a vertical retrace period.
Owner:SEMICON ENERGY LAB CO LTD

Light emitting device and method for manufacturing thereof

An object of the present invention is to provide a light emitting device including an organic light emitting layer and an organic compound and having high light emitting efficient along with less deterioration in characteristics. In the light emitting device, an anode, a cathode facing the anode, light emitting layers each comprising an organic compound and being provided between the anode and the cathode, and carrier transporting layers each comprising an organic compound, are provided over a substrate. Each of the light emitting layers and each of the carrier transporting layers are alternately stacked. A thickness of each of the carrier transporting layers is thinner than that of each of the light emitting layers. When each of the carrier transporting layers is a hole transporting layer, each of the light emitting layers has an electron transporting property. When each of the carrier transporting layers is an electron transporting layer, each of the light emitting layers has a hole transporting property.
Owner:SEMICON ENERGY LAB CO LTD

Filter component

In a filter component with improved attenuation characteristics for common mode noise, an LC series resonance circuit disposed in each of a plurality of shunt circuits is connected at a first end to a first line and is grounded at a second end. The LC series resonance circuit disposed in each of the shunt circuits is grounded at a first end and is connected at a second end to a second line. With this configuration, the LC series resonance circuits resonate reliably so as to define attenuation poles. Accordingly, the resonant frequency of each of the LC series resonance circuits is set to be a frequency that effectively attenuates common mode noise.
Owner:MURATA MFG CO LTD

Electrostatic chuck with heater and manufacturing method thereof

ActiveUS7701693B2Effectively suppress the leak current from the dielectric electrodeFew characteristicSemiconductor/solid-state device manufacturingCeramic shaping apparatusMaterials scienceAlumina ceramic
An electrostatic chuck includes a base. The base has a support portion made of alumina ceramics, and a surface portion made of yttria ceramics. The surface portion forms at least a substrate mounting surface and side surface of the base on a surface of the support portion. Carbon contents in alumina ceramics of the support portion and yttria ceramics of the surface portion are 0.05 wt % or less.
Owner:NGK INSULATORS LTD

Differential amplifier circuitry formed on semiconductor substrate with rewiring technique

In a differential amplifier circuitry formed on a semiconductor substrate, first and second transistors constitute a differential pair of the differential amplifier circuitry. First and second pads are connected with emitters of the first and second transistors, respectively. The first and second pads are connected with first and second external ground terminals via first and second rewiring layers to be grounded, respectively. The first and second rewiring layers are preferably connected with each other. Further, bases of the first and second transistors are connected with first and second bias circuits via first and second resistors, respectively.
Owner:PANASONIC CORP

Method of producing ceramic multilayer substrate

After a resistor and / or a capacitor are simultaneously fired on a fired ceramic core substrate to be fired, the fired resistor and / or the fired capacitor is trimmed so that the resistance and the capacitance are adjusted. Thereafter, an after-lamination green sheet is laminated onto the ceramic core substrate and the produced after-lamination substrate is fired at a temperature which is lower than the sintering temperature of the resistor and the dielectric. Thus, the sintered resistor and dielectric can be prevented from being softened and melted when the after-lamination substrate is fired. Moreover, the resistance and the capacitance accurately adjusted by trimming before the after-lamination substrate is fired are not changed by the firing.
Owner:MURATA MFG CO LTD

Signal processing circuit and method

The present disclosure relates to a signal processing circuit and method for the same capable of generating a stable physical unclonable function (PUF) being less susceptible to environmental changes and having less characteristic deterioration. Two VDDs are voltages alternately inverted. The two VDDs perform charge and discharge such that one is turned on while the other is turned off, and a current flows by a difference at an edge during switching (inversion). The output I1 is proportional to a capacitance value difference between the pair of DUTs, and the capacitance value difference between the pair of DUTs can be obtained by ΔC=ΔI / (VDD*f). The present technology is applicable to a signal processing circuit on which a differential pair is mounted, for example.
Owner:SONY CORP

Ceramic component and method of manufacturing the same

Provided are a ceramic component and a method of manufacturing the ceramic component. The ceramic component includes a previously fired insulation ceramic base, a functional ceramic sheet bonded to the insulation ceramic base by a diffusion bonding layer having an anchoring structure, internal electrodes embedded into the functional ceramic sheet, and external electrodes connected to the internal electrodes. A functional ceramic paste corresponding to the functional ceramic sheet is applied to the insulation ceramic base and is dried to form a functional ceramic film. The functional ceramic film is pressed against the insulation ceramic base to anchor functional ceramic film into the insulation ceramic base for sure attachment. The functional ceramic film is fired to allow functional oxide materials included in the functional ceramic film to permeate the insulation ceramic base by solid diffusion to form the diffusion bonding layer and to change the functional ceramic film into the functional ceramic sheet.
Owner:JOINSET

Semiconductor memory cell and semiconductor memory device

InactiveUS20050136581A1High field-effect mobilityLess fluctuated in characteristicTransistorSolid-state devicesDistortionLaser light
An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor film and the melted semiconductor is poured into the concave portion, where it is crystallized. This makes distortion or stress accompanying crystallization concentrate on other regions than the concave portion. A surface of this crystalline semiconductor film is etched away, thereby forming in the concave portion a crystalline semiconductor film which is covered with side walls of the concave portion from the sides and which has no other grain boundaries than twin crystal. TFTs and memory TFTs having this crystalline semiconductor film as their channel regions are highly reliable, have high field effect mobility, and are less fluctuated in characteristic. Accordingly, a highly reliable semiconductor memory device which can operate at high speed is obtained.
Owner:SEMICON ENERGY LAB CO LTD

Radio frequency module

A radio frequency module in which the loop shape of a wire can be stable by disposing a protruding electrode at a bonding ending-point portion when a bonding wire forms a shield between components is provided. A radio frequency module includes a multilayer wiring board, components to mounted on an upper surface of the multilayer wiring board, a shield member formed of a plurality of bonding wires to cover the component, and a protruding electrode provided at a bonding ending-point portion of each of the bonding wires. Since the protruding electrode is provided at the bonding ending-point portion of each of the bonding wires, undesired bending can be prevented on a second bond side of the bonding wire. The shield member to cover side surfaces and a top surface of the component can be easily formed.
Owner:MURATA MFG CO LTD

Method for driving liquid crystal display device

A liquid crystal material is prevented from being degraded by a voltage to control the shift of the threshold voltage which is applied to a back gate on the same conductive film as a pixel electrode. A liquid crystal display device includes a pixel circuit including a pixel electrode which applies an electric field to a liquid crystal layer; and a driver circuit including a transistor including a first gate and a second gate with a semiconductor film interposed therebetween. The transistor overlaps with the liquid crystal layer. A signal for controlling on / off of the transistor is input to the first gate. A signal for applying a first voltage is input to the second gate in a gate line selection period. A signal for alternately applying the first voltage and a second voltage is input to the second gate in a vertical retrace period.
Owner:SEMICON ENERGY LAB CO LTD

Silicon light emitting device and method of fabricating same

A light emitting device (10) comprises a body (11) comprising a substrate (12) of a p-type semiconductor material. The substrate has an upper surface (14) and having formed therein on one side of the upper surface and according to a bulk semi-conductor fabrication process utilizing lateral active area isolation techniques: a first n+-type island (16) to form a first junction (24) between the first island and the substrate; and a second n+-type island (18) spaced laterally from the first island (16). The substrate provides a laterally extending link (20) between the islands having an upper surface. The upper surface of the link, an upper surface of the island (16) and an upper surface of the island (18) collectively form a planar interface (21) between the body (11) and an isolation layer (19) of the device. The device comprises a terminal arrangement to apply a reverse bias to the first junction, to cause the device to emit light. The device is configured to facilitate the transmission of the emitted light.
Owner:INSIAVA

Differential amplifier circuitry formed on semiconductor substrate with rewiring technique

In differential amplifier circuitry formed on a semiconductor substrate, first and second transistors constitute a differential pair of the differential amplifier circuitry. First and second pads are connected with emitters of the first and second transistors, respectively. The first and second pads are connected with first and second external ground terminals via first and second rewiring layers to be grounded, respectively. The first and second rewiring layers are preferably connected with each other. Further, bases of the first and second transistors are connected with first and second bias circuits via first and second resistors, respectively.
Owner:PANASONIC CORP

Static RAM having a TFT with n-type source and drain regions and a p-type region in contact with only the intrinsic channel of the same

To prevent an n-channel thin-film transistor from being deteriorated by hot holes generated in a gate-negative pulse mode. A thin polysilicon film 10 is provided with a p-type semiconductor region 13 in contact with a channel region 14. The p-type semiconductor region 13 is electrically connected to nowhere except the channel region 14. Holes induced on the surface due to a gate-negative pulse are further supplied from the p-type semiconductor region 13. An electric field established by the gate-negative pulse is relaxed by the holes, fewer hot holes are injected into the gate oxide film, and the TFT characteristics are less deteriorated.
Owner:PANASONIC LIQUID CRYSTAL DISPLAY CO LTD +1

Method of manufacturing piezoelectric actuator

In a method of manufacturing piezoelectric actuators, a vibrating body plate supporting vibrating bodies at vibrational nodes thereof and a moving body plate having moving bodies are provided. Each of the vibrating bodies has a vibrator and a piezoelectric body mounted on the vibrator. The vibrating body plate and the moving body plate are stacked over one another to provide a piezoelectric actuator assembly. The piezoelectric actuator assembly is then cut at the vibrational nodes of the vibrating bodies to provide individual piezoelectric actuators.
Owner:SEIKO INSTR INC
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