The invention discloses a method for washing high-resistivity and low-resistivity silicon materials. The method comprises the following steps of: soaking the silicon material into hydrofluoric acid or a mixed solution of hydrofluoric acid and ammonium fluoride, after soaking, taking out the silicon material and washing the silicon material to be neutral with water; preparing the mixed solution of hydrofluoric acid and hydrogen nitrate, adding the silicon material into a plastic container, adding the prepared mixed solution, after reaction, lightly swashing the silicon material with clean water, enabling the low-resistivity silicon material to float on water surface, thereby realizing separation of high-resistivity silicon material and low-resistivity silicon material; mixing the mixed solution of hydrofluoric acid, hydrogen nitrate and glacial acetic acid, adding the separated high-resistivity material into the mixed solution, stirring and adding hydrogen peroxide at intervals, then, taking out the material and washing the material to be neutral with water; adding the high-resistivity material into an alkali wash basin, adding solid sodium hydroxide, adding a sodium hydroxide solution simultaneously, stirring for reaction, then, washing the alkali liquor away by the clean water; soaking the high-resistivity material into electronic grade hydrochloric acid, after soaking, washing the high-resistivity material to be clean with pure water; and finally, executing ultrasonic treatment with pure water, and then, fishing out the high-resistivity material, and drying.