116results about How to "Boost voltage" patented technology

A system and method for combining power from DC power sources. Each power source is coupled to a converter. Each converter converts input power to output power by monitoring and maintaining the input power at a maximum power point. Substantially all input power is converted to the output power, and the controlling is performed by allowing output voltage of the converter to vary. The converters are coupled in series. An inverter is connected in parallel with the series connection of the converters and inverts a DC input to the inverter from the converters into an AC output. The inverter maintains the voltage at the inverter input at a desirable voltage by varying the amount of the series current drawn from the converters. The series current and the output power of the converters, determine the output voltage at each converter.

A flash NAND type EEPROM system with individual ones of an array of charge storage elements, such as floating gates, being capacitively coupled with at least two control gate lines. The control gate lines are preferably positioned between floating gates to be coupled with sidewalls of floating gates. The memory cell coupling ratio is desirably increased, as a result. Both control gate lines on opposite sides of a selected row of floating gates are usually raised to the same voltage while the second control gate lines coupled to unselected rows of floating gates immediately adjacent and on opposite sides of the selected row are kept low. The control gate lines can also be capacitively coupled with the substrate in order to selectively raise its voltage in the region of selected floating gates. The length of the floating gates and the thicknesses of the control gate lines can be made less than the minimum resolution element of the process by forming an etch mask of spacers.

A method for preventing generation of program disturbance incurred by hot electrons in a NAND flash memory device. A channel boosting disturb-prevention voltage lower than a program-prohibit voltage applied to other word lines is applied to edge word lines coupled to memory cells that are nearest to select transistors. As a result, an electric field between the memory cells coupled to the edge word lines and the select transistors is weakened, and the energy of the hot electrons is reduced.

This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively.

This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively.

A floating gate memory array includes row control circuits that provide a programming voltage to a selected word line and provide a stair-like pattern of boosting voltages to unselected word lines. Boosting voltages descend with increased distance from the selected word line. Boosting voltages are increased in small increments up to their final values.

Disclosed is a system for controlling a hybrid vehicle when the state of charge of a high voltage battery is sufficiently low. In particular, a motor unit is connected to an engine via a rotation element, a high voltage battery is electrically connected to the motor unit to provide power thereto, and a low voltage battery is electrically connected to the high voltage battery through a two-way converter. Advantageously, a control portion is configured to boost voltage of the low voltage battery to supply the high voltage battery with high voltage through the two-way converter when the state of charge of the high voltage battery falls below a first predetermined value.

This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively.

Power electronics equipment includes a switching device directing current flow to a load and interrupting the current flowing to the load, a control circuit generating a control signal directing the conduction and non-conduction of the switching device, a driver circuit driving a control terminal of the switching device based on the control signal, and at least one air-cored insulating transformer insulating the control circuit and the driver circuit from each other. Each air-cored insulating transformer includes a primary winding and a secondary winding configured to generate a voltage by a change of interlinkage of a magnetic field. The secondary winding includes a plurality of coils configured such that voltages generated by external magnetic flux intersecting the secondary winding are canceled and a voltage generated by the signal magnetic flux intersecting the secondary winding is increased.

A flash NAND type EEPROM system with individual ones of an array of charge storage elements, such as floating gates, being capacitively coupled with at least two control gate lines. The control gate lines are preferably positioned between floating gates to be coupled with sidewalls of floating gates. The memory cell coupling ratio is desirably increased, as a result. Both control gate lines on opposite sides of a selected row of floating gates are usually raised to the same voltage while the second control gate lines coupled to unselected rows of floating gates immediately adjacent and on opposite sides of the selected row are kept low. The control gate lines can also be capacitively coupled with the substrate in order to selectively raise its voltage in the region of selected floating gates. The length of the floating gates and the thicknesses of the control gate lines can be made less than the minimum resolution element of the process by forming an etch mask of spacers.

A first embodiment of a word line voltage boosting circuit for use with an array of non-volatile memory cells has a capacitor, having two ends, connected to the word line. One end of the capacitor is electrically connected to the word line. The other end of the capacitor is electrically connected to a first voltage source. The word line is also connected through a switch to a second source voltage source. A sequencing circuit activates the switch such that the word line is connected to the second voltage source, and the other end of the capacitor is not connected to the first voltage source. Then the sequencing circuit causes the switch to disconnect the word line from the second voltage source, and connect the second end of the capacitor to the first voltage source. The alternate switching of the connection boosts the voltage on the word line. In a second embodiment, a first word line is electrically connected to a first switch to a first voltage source. An adjacent word line, capacitively coupled to the first word line, is electrically connected to a second switch to a second voltage source. A sequencing circuit activates the first switch and the second switch such that the first word line is connected to the first voltage source, and the second word line is disconnected from the second voltage source. Then the sequencing circuit causes the first switch to disconnect the first word line from the first voltage source, and causes the second word line to be electrically connected to the second voltage source. The alternate switching of the connection boosts the voltage on the first word line, caused by its capacitive coupling to the second word line. A boosted voltage on the word line may be used to improve cycling and yield, where the memory cells of the array are of the floating gate type and erase through the mechanism of Fowler-Nordheim tunneling from the floating gate to a control gate which is connected to the word line.

A capacitance measurement system precharges first terminals (21-0 . . . 21-k . . . 21-n) of a plurality of capacitors (25-0 . . . 25-k . . . 25), respectively, of a CDAC (capacitor digital-to-analog converter) (23) included in a SAR (successive approximation register) converter (17) to a first voltage (VDD) and pre-charges a first terminal (3-j) of a capacitor (CSENj) to a second voltage (GND). The first terminals are coupled to the first terminal of the capacitor to redistribute charges therebetween so as to generate a first voltage on the first terminals and the first terminal of the capacitor, the first voltage being representative of a capacitance of the first capacitor (CSENj). A SAR converter converts the first voltage to a digital representation (DATA) of the capacitor. The capacitance can be a touch screen capacitance.

An upper limit value setting unit of a control device conducts integration on the change in battery power, and determines whether the integrated value is lower than a preset first threshold value (negative value). When determination is made that the integrated value is lower than the first threshold value, and the battery power difference is lower than the second threshold value (negative value), the upper limit value setting unit sets Vup2 that is lower than the general Vup1 as the upper limit value of the inverter input voltage command.

The invention describes a charge-pump circuit (1, 1′) comprising a supply voltage input node (10) for applying an input voltage (Uin) to be boosted, a boosted voltage output node (11) for outputting a boosted voltage (Uout), and a plurality of transistor stages connected in series between the supply voltage input node (10) and the boosted voltage output node (11), wherein at least one transistor stage comprises a multiple-gate transistor (D1, . . . , D5), which transistor (D1, . . . , D5) comprises at least two gates, of which one is a first gate (G) for switching the transistor (D1, . . . , D5) on or off according to a voltage applied to the first gate (G), and one is an additional second gate (Gi) for controlling the threshold voltage of the multiple-gate transistor (D1, . . . , D5), independently of the first gate (G), according to a control voltage (Φ1, Φ2) applied to the second gate (Gi). The invention further describes a method of boosting a voltage using a charge-pump circuit (1, 1′) comprising a plurality of transistor stages connected in series between a supply voltage input node (10) and a boosted voltage output node (11), wherein at least one transistor stage comprises a multiple-gate transistor (D1, . . . , D5), which method comprises applying an input voltage (Uin) to be boosted at the supply voltage input node (10); applying a control voltage, (Φ1, Φ2) to the second gate (Gi) of the multiple-gate transistor (D1, . . . , D5) to control the threshold voltage of the multiple-gate transistor (D1, . . . , D5); and outputting the boosted voltage (Uout) at the voltage output node (11).

A MOS capacitor receiving a clock signal complementary to a sampling clock signal is provided at an input of a clocked inverter that is activated after sampling an input signal to perform level conversion. A charge pump operation of the MOS capacitor is performed in parallel with the activation of the clocked inverter. The power consumption of and the area occupied by a level conversion circuit converting a voltage amplitude of the input signal are reduced without deteriorating a high-speed operating characteristics.

Systems, methods, and devices for use in a DC / DC converter. A circuit uses a full-bridge power semiconductor subcircuit along with a high power transformer subcircuit, a diode bridge subcircuit, and a parallel capacitor to provide galvanic isolation and boost the voltage from a power source such as a photovoltaic panel. To ensure zero voltage switching for the power semiconductors, either a passive auxiliary subcircuit or an inductor coupled in parallel to a transformer in the transformer subcircuit may be used. A controller which derives its timing signals from the transformer primary current is used to control the timing of the power semiconductors in the circuit. The circuit and its controller allows for self-adjusting regardless of load and uses the entire switching cycle to be used for power transfer.

A voltage generator with reduced noise features a detector, a controller, a sub-booster, a main booster and a voltage adder. The detector receives an output voltage, a first reference voltage and a second reference voltage lower than the first reference voltage, and then outputs a first sensing signal and a second sensing signal. The controller receives the first sensing signal and the second sensing signal and an action signal to output a first control signal and a second control signal. The sub-booster boosts a voltage in response of the first control signal. The main booster boosts a voltage in response to the second control signal. The voltage adder adds output signals from the sub-booster and main booster, to provide the output voltage.

A data storage device includes a semiconductor structure including a first conductive-type region having a first-type conductivity, a second conductive-type region spaced apart from the first conductive-type region and having a second-type conductivity opposite to the first-type conductivity, and a semiconductor region between the first conductive-type region and the second conductive-type region and including a neighbouring portion adjacent to the second conductive-type region; a mode select transistor including a gate electrode aligned with the neighbouring portion and an insulation layer between the gate electrode and the neighbouring portion; a plurality of memory cell transistors including a plurality of control gate electrodes aligned with the semiconductor region, and a data storage layer interposed between the plurality of control gate electrodes and the semiconductor region; a first wire electrically connected to the first conductive-type region; and a second wire including an ambipolar contact having a first contact between the second wire and the second conductive-type region, and a second contact between the second wire and the neighbouring portion.

In order to discharge electrical charges from a smoothing capacitor even if no discharge command is issued by a control system, making use of the displacement of a power unit in the event of a collision, a movable electrode is connected to a first contact connected to a high-potential bus, and the smoothing capacitor is connected with a converter and an inverter to be in parallel in the case where an engagement rod is positioned by a retaining ring. Further, when the engagement rod is disengaged from the retaining ring and removed from a relay, the movable electrode is held in contact with a second contact by a pressure spring, and the electrical charge remaining in the smoothing capacitor is discharged to a low-potential bus through a discharge portion.

A MOS capacitor receiving a clock signal complementary to a sampling clock signal is provided at an input of a clocked inverter that is activated after sampling an input signal to perform level conversion. A charge pump operation of the MOS capacitor is performed in parallel with the activation of the clocked inverter. The power consumption of and the area occupied by a level conversion circuit converting a voltage amplitude of the input signal are reduced without deteriorating a high-speed operating characteristics.

A high-efficiency high step-up ratio direct current converter with an interleaved soft-switching mechanism is provided. The direct current converter includes a voltage-multiplier circuit and an active clamping circuit. The voltage-multiplier circuit includes two isolating transformers, two main switches disposed on a primary side of the two isolating transformers, four diodes disposed on a secondary side of the two isolating transformers and four capacitors disposed on the secondary side of two isolating transformers, configured to boost a voltage of a direct-current power to a desired voltage value. The active clamping circuit, electrically connected to the voltage-multiplier circuit, includes two active clamp switches and a clamp capacitor to lower a voltage surge of the two main switches so that the two main switches and the two active clamp switches can be soft switched on.

An apparatus includes a multi-channel DC bus assembly comprising a first channel and a second channel, a first electromechanical device coupled to a positive DC link of the first channel, and a second electromechanical device coupled to a positive DC link of the second channel. A first DC-to-AC voltage inverter is coupled to the positive DC link of the first channel and a second DC-to-AC voltage inverter is coupled to the positive DC link of the second channel. The apparatus further includes a bi-directional voltage modification assembly coupled to the positive DC link of the second channel and a first energy storage system electrically coupled to the first electromechanical device.

A limited flash-over electric power switch uses a dielectric gas regulator and a flash-over arrestor to greatly diminish the occurrences of high voltage flash-over during operation of a circuit interrupter. The dielectric gas regulator prevents the flow of the dielectric gas into the arc gap during an initial portion of the opening stroke of the interrupter contacts. Once the arc gap is sufficiently wide to greatly diminish the likelihood of a high voltage flash-over, the dielectric gas regulator allows the dielectric gas to flow into the arc gap to extinguish the arc. The flash-over arrestor snubs out incipient flash-over that may occur as the arc attempts to reform across the arc gap. The flash-over arrestor may be a conductive ring located on the interior surface of the nozzle in the region of the orifice.