The invention discloses a split-gate type
flash memory structure and a manufacturing method of the split-gate type
flash memory structure. The split-gate type
flash memory structure comprises two split-gate units which are arranged in an abreast mode. Each split-gate unit comprises a gate
electrode oxide layer, a floating gate layer, a control gate
electrode oxide layer and a control gate
electrode layer, wherein each gate electrode
oxide layer, each floating gate layer, each control gate electrode oxide layer and each control gate electrode layer are arranged in a stacked mode in sequence. Each split-gate unit is integrally covered with oxide, and an oxide side wall is formed. The size of each floating gate layer is the same as the size of each control gate layer in the direction of abreast arrangement of the two split-gate units. A selection wire
polycrystalline silicon area is arranged between the two split-gate units. A
polycrystalline silicon connecting area and an oxide isolating area are formed on the oxide side wall on the outer side of each split-gate unit in a stacked mode, and the outer side of each split-gate unit is the other side, opposite to each selection wire
polycrystalline silicon area, of each split-gate unit. Each polycrystalline
silicon connecting area is flush with the upper surface of each floating gate layer. A polycrystalline
silicon word line is formed on the outer side of each polycrystalline
silicon connecting area and each oxide isolating area, wherein each polycrystalline silicon connecting area and each oxide isolating area are arranged in the stacked mode.