The invention discloses a bidirectional ESD protection structure with an embedded low trigger
voltage PNP structure. The bidirectional ESD protection structure is used for ESD protection devices on ICchips and composed of a P substrate, N traps, a P trap, a first N+ injection region, a first P+ injection region, a first P+ span bridge, a second P+ injection region, a second P+ span bridge, a third P+ injection region, a second N+ injection region,
metal anodes,
metal cathodes and mulitple field
oxygen isolation regions. Under the function of high-
voltage ESD pulses, on the one hand, a spurious SCR current assistant protection path is formed by the first P+ injection region, the first N trap, the P trap, the second N trap and the second N+ injection region, so that the failure current of the devices can be increased, and the ESD robustness of the devices can be improved; on the other hand, a spurious PNP structure is formed by the first P+ injection region, the first N trap, the firstP+ span bridge, the P trap and the second P+ injection region, so that the maintenance
voltage of the devices is increased, and the latch-resisting capability of the devices is improved. The ESD protection device is of a symmetrical structure, and can achieve the bidirectional ESD protection function and reduce the occupied
layout area.