A bidirectional esd protection device with composite structure
A composite structure and device technology, applied in semiconductor devices, electro-solid devices, electrical components, etc., can solve problems such as high trigger voltage, low sustain voltage, latch-up risk, etc., to reduce trigger voltage, increase sustain voltage, and reduce amplification. multiplier effect
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[0032] In this embodiment, a protection device with ESD protection performance is designed, which has a composite structure and layout. Specifically, through a new layout design, the on-state NMOS, the off-state NMOS and the SCR are combined together, and the on-state NMOS and the off-state NMOS are connected in series to form an auxiliary trigger SCR current path to reduce the trigger voltage of the device and increase the P-type The medium doping level increases the base concentration of the parasitic NPN transistor, and the layout design further reduces the emitter area of the parasitic NPN transistor inside the SCR, reduces the magnification of the parasitic transistor inside the SCR, weakens the positive feedback of the SCR, and improves the maintenance of the device Voltage, enhance the voltage clamping ability of the device, expand the stack along the width direction of the device, enhance the robustness of the device, and the completely symmetrical structure enables t...
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