Silicon controlled device with double-conduction path

Abstract

The invention discloses a silicon controlled device with a double-conduction path. The silicon controlled device comprises a P well and an N well, wherein an N+ injection region and a Pbody region are spanned between the P well and the N well. The N+ injection region spanned between the P well and the N well is used for realizing reduction of the silicon controlled trigger voltage; and the Pbody region at a junction between the N well and the P well is used for realizing separation between a silicon controlled surface current path and a silicon controlled internal current path. Compared with the common SCR (silicon controlled rectifier) structure which has the defects that more currents are concentrated on the surface of the device, and the conduction uniformity is bad, the silicon controlled device with the double-conduction path has simple structure, good conduction uniformity, high ESD (electro-static discharge) efficiency and good robustness and is suitable for electrostatic discharge protection of high voltage circuits and power circuits.

Description

technical field [0001] The invention belongs to the field of electrostatic protection of integrated circuits, and in particular relates to a thyristor device with double conduction paths. Background technique [0002] The phenomenon of electrostatic discharge (ESD) in nature poses a serious threat to the reliability of integrated circuits. In the industry, 30% of the failures of integrated circuit products are caused by electrostatic discharge, and the increasingly smaller process size and thinner gate oxide thickness greatly increase the probability of integrated circuit damage by electrostatic discharge. Therefore, improving the reliability of integrated circuit electrostatic discharge protection has a non-negligible effect on improving the yield of products. [0003] The modes of electrostatic discharge phenomena are usually divided into four types: HBM (Human Body Model), MM (Machine Discharge Model), CDM (Component Charge Discharge Model) and Field Induction Model (FIM...

AI Technical Summary

Problems solved by technology

Therefore, the trigger voltage of the thyristor is relatively high, and it cannot effectively protect the working voltage of 5V and below.

At the same time, according to the principle that electrons always choose the shortest path, the electronic current in the ESD device will choose the shortest conduction path. When the device discharges the ESD current, the current density on the surface of the device is always the largest, so there is an ESD device on the surface and inside the device. The problem of uneven conduction

Images