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ESD protection device capable of modulating trigger voltage and preparation method thereof

A technology of ESD protection and trigger voltage, which is applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of large trigger voltage and exceeding damage voltage, etc., to reduce leakage current, improve control ability, and unit discharge current density high effect

Active Publication Date: 2019-06-25
CHANGZHOU INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its trigger voltage is very large, often exceeding the damage voltage of the protected unit

Method used

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  • ESD protection device capable of modulating trigger voltage and preparation method thereof
  • ESD protection device capable of modulating trigger voltage and preparation method thereof
  • ESD protection device capable of modulating trigger voltage and preparation method thereof

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Embodiment Construction

[0036] In order to make the object, technical solution and advantages of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Embodiments of the present invention are described in detail, examples of which are shown in the drawings, in which the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0037] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit...

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Abstract

The invention discloses an ESD protection device capable of modulating a trigger voltage and a preparation method thereof. One or more tunneling diodes are formed in the device. An avalanche diode isreplaced by a Zener diode on a parasitic structure, and the avalanche breakdown is replaced by tunneling breakdown on the breakdown principle, so that an electrical breakdown point of a parasitic SCRis changed, the trigger voltage is effectively reduced, and the trigger voltage is modulated according to the change of the structure. Meanwhile, the invention discloses a preparation method of the ESD protection device capable of modulating the trigger voltage, and the preparation method is used for preparing the ESD protection device capable of modulating the trigger voltage. The ESD protectiondevice formed by modulating the trigger voltage and capable of modulating the trigger voltage can meet the requirement of an ESD protection window under the FinFET technology, and it is guaranteed that the trigger voltage is lower than the damage voltage of a protected unit.

Description

technical field [0001] The invention relates to the field of electrostatic reliability, in particular to an ESD protection device capable of modulating trigger voltage and a preparation method thereof. Background technique [0002] With the wide application and continuous progress of large-scale and ultra-large-scale integrated circuits, electronic devices are very prone to damage or early failure due to electrostatic discharge (ElectroStatic Discharge, ESD). FinFET is a new type of three-dimensional semiconductor structure that appeared in the process below 45nm and is generally adopted in the process below 14nm. This three-dimensional structure effectively overcomes the increasingly significant short-channel effect brought about by the decreasing size of planar MOSFETs, and controls the channel through three sides, which greatly improves the control ability of the channel and reduces the the leakage current. However, every progress in technology and further reduction in ...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L21/82
Inventor 姜一波毕卉徐志豪江情男施程
Owner CHANGZHOU INST OF TECH
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