Bidirectional ESD protection structure with embedded low trigger voltage PNP structure

Abstract

The invention discloses a bidirectional ESD protection structure with an embedded low trigger voltage PNP structure. The bidirectional ESD protection structure is used for ESD protection devices on ICchips and composed of a P substrate, N traps, a P trap, a first N+ injection region, a first P+ injection region, a first P+ span bridge, a second P+ injection region, a second P+ span bridge, a third P+ injection region, a second N+ injection region, metal anodes, metal cathodes and mulitple field oxygen isolation regions. Under the function of high-voltage ESD pulses, on the one hand, a spurious SCR current assistant protection path is formed by the first P+ injection region, the first N trap, the P trap, the second N trap and the second N+ injection region, so that the failure current of the devices can be increased, and the ESD robustness of the devices can be improved; on the other hand, a spurious PNP structure is formed by the first P+ injection region, the first N trap, the firstP+ span bridge, the P trap and the second P+ injection region, so that the maintenance voltage of the devices is increased, and the latch-resisting capability of the devices is improved. The ESD protection device is of a symmetrical structure, and can achieve the bidirectional ESD protection function and reduce the occupied layout area.

Description

technical field [0001] The invention belongs to the field of electrostatic discharge protection of integrated circuits, relates to an ESD protection device, in particular to a bidirectional ESD protection structure embedded with a low trigger voltage PNP structure. Background technique [0002] With the rapid development of integrated circuit technology, electronic products are increasingly miniaturized. While improving the performance and integration of integrated structures, the internal structure of integrated circuits is more likely to be damaged when ESD pulses come, and the reliability problems caused by ESD are becoming more and more serious. more people's attention. According to the investigation of various factors that cause the failure of integrated circuit products, it is found that the economic losses caused by ESD in the semiconductor industry are as high as billions of dollars every year. Therefore, in order to reduce the high economic loss caused by the relia...

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Problems solved by technology

[0005] In order to solve the above problems, the present invention proposes a bidirectional ESD protection structure embedded with a low-trigger voltage PNP structure, which is used for ESD on IC chips. The protective device is mainly composed of P substrate, N well, P well, first N+ implantation region, first P+ implantation region, first P+ bridge, second P+ implantation region, second P+ bridge, third P+ Implantation region, second N+ implantation region, metal anode, metal cathode and several field oxygen isolation regions

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