Fin type lateral double-diffusion power device

Abstract

The invention discloses a fin-type lateral double-diffusion power device, which is characterized in that an active region above a substrate is prepared into a fin-type structure, then high dielectricconstant media are adopted to cover the two sides and the surface of a fin-type active region, and modulation is carried out on the active region from three directions; the original surface gate is replaced by the three gates, so that the channel control capability is better, and the leakage current when the device is turned off is reduced; a common silicon oxide gate medium is changed into a high-k gate medium, a thicker physical oxide layer can be achieved, and the problem of gate leakage current is solved. The invention has the advantages of high voltage resistance, low on-resistance, low leakage current and the like, and is suitable for the field of high voltage and high frequency.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a fin-type lateral double-diffusion power device. Background technique [0002] With the development of power chip design technology, power integrated circuits have put forward higher requirements on the performance of semiconductor power devices. As one of the core devices of power integrated circuits, lateral semiconductor power devices need to provide high breakdown voltage, low On-resistance to reduce power consumption may also require better subthreshold characteristics and avoid short-channel effects. Lateral double-diffusion power device LDMOS is widely used in DC-DC converters and radio frequency base stations due to its good process compatibility, excellent conversion performance, high power performance, high gain and linearity, and low manufacturing cost. . [0003] When the LDMOS breakdown voltage increases, the on-resistance often increases at th...

AI Technical Summary

Problems solved by technology

In the fin-type process, the LDMOS semiconductor device becomes a fin-type three-dimensional structure, such as the literature: Amin Pak, Ali A.Orouji. Compact Modeling of Fin-LDMOSTransistor Based on the Surface Potential, Silicon, 2019, pp.1-6 involves A fin-type LDMOS device, but this device only uses a three-gate structure for channel modulation, and does not improve the drift region

SMIC International Integrated Circuit Manufacturing (Shanghai) Co., Ltd. proposed a lateral double-diffusion semiconductor device (CN104576732B) of a parasitic FinFET. no modulation

Images