A fin-type lateral double-diffusion power device

Abstract

The invention discloses a fin-type lateral double-diffusion power device. The active area above a substrate is prepared into a fin-type structure, and then a high dielectric constant medium is used to cover both sides and surfaces of the fin-type active area. Modulate the active area in different directions; replace the original surface gate with tri-gate, which has better channel control capability and reduces the leakage current when the device is turned off; the commonly used silicon oxide gate dielectric is changed into a high-k gate dielectric , can have a thicker physical oxide layer and improve the problem of gate leakage current. The invention has the advantages of high withstand voltage, low on-resistance, low leakage current and the like, and is suitable for high-voltage and high-frequency fields.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a fin-type lateral double diffusion power device. Background technique [0002] With the development of power chip design technology, power integrated circuits have also put forward higher requirements for the performance of semiconductor power devices. As one of the core devices of power integrated circuits, lateral semiconductor power devices need to provide high breakdown voltage and low On-resistance to reduce power dissipation may also require better subthreshold characteristics and avoid short-channel effects. Lateral double diffusion power device LDMOS is widely used in DC-DC converters, RF base stations due to its good process compatibility, excellent conversion performance, high power performance, high gain and linearity and low manufacturing cost. . [0003] When the breakdown voltage of LDMOS increases, the on-resistance often increases at the sam...

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Problems solved by technology

In the fin-type process, the LDMOS semiconductor device becomes a fin-type three-dimensional structure, such as the literature: Amin Pak, Ali A.Orouji. Compact Modeling of Fin-LDMOSTransistor Based on the Surface Potential, Silicon, 2019, pp.1-6 involves A fin-type LDMOS device, but this device only uses a three-gate structure for channel modulation, and does not improve the drift region

SMIC International Integrated Circuit Manufacturing (Shanghai) Co., Ltd. proposed a lateral double-diffusion semiconductor device (CN104576732B) of a parasitic FinFET. no modulation

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