A fin-type lateral double-diffusion power device

A technology of lateral double-diffusion and power devices, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of no modulation in the drift region and no improvement in the drift region, so as to suppress the short channel effect , good channel control ability, and the effect of improving gate leakage current

Active Publication Date: 2022-07-08
NANJING UNIV OF POSTS & TELECOMM +1
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

In the fin-type process, the LDMOS semiconductor device becomes a fin-type three-dimensional structure, such as the literature: Amin Pak, Ali A.Orouji. Compact Modeling of Fin-LDMOSTransistor Based on the Surface Potential, Silicon, 2019, pp.1-6 involves A fin-type LDMOS device, but this device only uses a three-gate structure for channel modulation, and does not improve the drift region
SMIC International Integrated Circuit Manufacturing (Shanghai) Co., Ltd. proposed a lateral double-diffusion semiconductor device (CN104576732B) of a parasitic FinFET. no modulation

Method used

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  • A fin-type lateral double-diffusion power device
  • A fin-type lateral double-diffusion power device
  • A fin-type lateral double-diffusion power device

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Embodiment Construction

[0026] The present invention will be further described in detail below with reference to the embodiments.

[0027] like figure 2 Shown is a fin-type lateral double-diffusion power device provided by the present invention, the LDMOS device includes a semiconductor substrate 1 located at the bottom, a buried layer 2 on the substrate, and a fin-type active region 3 located above the buried layer;

[0028] like image 3 As shown, the fin-type active region 3 includes a number of discrete fins, which are convex, image 3 Three fins are shown in the figure, and dielectric groove regions are provided on both sides of the fins; each fin includes a semiconductor drain region 4, a semiconductor drift region 5, and a semiconductor well region 8, and the semiconductor well region 8 is located in the semiconductor drift region 5. On one side, the semiconductor drain region 4 is located above the other side of the semiconductor drift region 5; wherein the semiconductor well region 8 incl...

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Abstract

The invention discloses a fin-type lateral double-diffusion power device. The active area above a substrate is prepared into a fin-type structure, and then a high dielectric constant medium is used to cover both sides and surfaces of the fin-type active area. Modulate the active area in different directions; replace the original surface gate with tri-gate, which has better channel control capability and reduces the leakage current when the device is turned off; the commonly used silicon oxide gate dielectric is changed into a high-k gate dielectric , can have a thicker physical oxide layer and improve the problem of gate leakage current. The invention has the advantages of high withstand voltage, low on-resistance, low leakage current and the like, and is suitable for high-voltage and high-frequency fields.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a fin-type lateral double diffusion power device. Background technique [0002] With the development of power chip design technology, power integrated circuits have also put forward higher requirements for the performance of semiconductor power devices. As one of the core devices of power integrated circuits, lateral semiconductor power devices need to provide high breakdown voltage and low On-resistance to reduce power dissipation may also require better subthreshold characteristics and avoid short-channel effects. Lateral double diffusion power device LDMOS is widely used in DC-DC converters, RF base stations due to its good process compatibility, excellent conversion performance, high power performance, high gain and linearity and low manufacturing cost. . [0003] When the breakdown voltage of LDMOS increases, the on-resistance often increases at the sam...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/51H01L21/336
CPCH01L29/51H01L29/7816H01L29/7855H01L29/66681H01L29/66803
Inventor 姚佳飞张振宇郭宇锋
Owner NANJING UNIV OF POSTS & TELECOMM
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