Different sized features in the array and in the periphery of an
integrated circuit are patterned on a substrate in a
single step. In particular, a
mixed pattern, combining two separately formed patterns, is formed on a single
mask layer and then transferred to the underlying substrate. The first of the separately formed patterns is formed by
pitch multiplication and the second of the separately formed patterns is formed by conventional
photolithography. The first of the separately formed patterns includes lines that are below the resolution of the photolithographic process used to form the second of the separately formed patterns. These lines are made by forming a pattern on
photoresist and then
etching that pattern into an
amorphous carbon layer. Sidewall pacers having widths less than the widths of the un-etched parts of the
amorphous carbon are formed on the sidewalls of the
amorphous carbon. The amorphous carbon is then removed, leaving behind the sidewall spacers as a
mask pattern. Thus, the spacers form a
mask having feature sizes less than the resolution of the
photolithography process used to form the pattern on the
photoresist. A protective material is deposited around the spacers. The spacers are further protected using a
hard mask and then
photoresist is formed and patterned over the
hard mask. The photoresist pattern is transferred through the
hard mask to the protective material. The pattern made out by the spacers and the temporary material is then transferred to an underlying amorphous carbon hard
mask layer. The pattern, having features of difference sizes, is then transferred to the underlying substrate.