52 results about "Ion current density" patented technology

An all permanent magnet Electron Cyclotron Resonance, large diameter (e.g., 40 cm) plasma source suitable for ion / plasma processing or electric propulsion, is capable of producing uniform ion current densities at its exit plane at very low power (e.g., below 200 W), and is electrodeless to avoid sputtering or contamination issues. Microwave input power is efficiently coupled with an ionizing gas without using a dielectric microwave window and without developing a throat plasma by providing a ferromagnetic cylindrical chamber wall with a conical end narrowing to an axial entrance hole for microwaves supplied on-axis from an open-ended waveguide. Permanent magnet rings are attached inside the wall with alternating polarities against the wall. An entrance magnet ring surrounding the entrance hole has a ferromagnetic pole piece that extends into the chamber from the entrance hole to a continuing second face that extends radially across an inner pole of the entrance magnet ring.

Methods of operating an electromagnet of an ion source for generating an ion beam with a controllable ion current density distribution. The methods may include generating plasma in a discharge space of the ion source, generating and shaping a magnetic field in the discharge space by applying a current to an electromagnet that is effective to define a plasma density distribution, extracting an ion beam from the plasma, measuring a distribution profile for the ion beam density, and comparing the actual distribution profile with a desired distribution profile for the ion beam density. Based upon the comparison, the current applied to the electromagnet may be adjusted either manually or automatically to modify the magnetic field in the discharge space and, thereby, alter the plasma density distribution.

Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber.

Ion sources and methods of operating an electromagnet of an ion source for generating an ion beam with a controllable ion current density distribution. The ion source (10) includes a discharge chamber (16) and an electromagnet (42; 42a-d) adapted to generate a magnetic field (75) for changing a plasma density distribution inside the discharge chamber (16). The methods may include generating plasma (17) in the discharge space (24), generating and shaping a magnetic field (75) in the discharge space (24) by applying a current to an electromagnet (42; 42a-d) that is effective to define the plasma density distribution, extracting an ion beam (15) from the plasma (17), measuring a distribution profile for the ion beam density, and comparing the actual distribution profile with a desired distribution profile for the ion beam density. Based upon the comparison, the current applied to the electromagnet (42; 42a-d) may be adjusted to modify magnetic field (75) the magnetic field in the discharge space and, thereby, alter the plasma density distribution.

Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber.

Ion sources and methods for generating an ion beam with a controllable ion current density distribution. The ion source includes a discharge chamber and an electromagnet adapted to generate a magnetic field for changing a density distribution of the plasma inside the discharge chamber and, thereby, to change the ion current density distribution.

The present invention discloses a method for calculation of characteristic lines of a three-dimensional ionized field of a direct current transmission line. The method can be used for calculation of direct current three-dimensional ionized fields of line crossing and around the surface structures and insulators. The method comprises: giving an assumed distribution of a space electric field and of space charges, calculating a new space electric field distribution by employing the space charges through the Poisson equation, and painting characteristic lines; solving the charge distribution on the characteristic lines according to the new space electric field distribution through the ion current equation and the current continuity equation; and repeating the steps mentioned above until the distributions of two successive space charges is in an allowable error range, and performing calculation of combination of the electric field and the ion current density. Compared to the Deutsch hypothesis method, the method for calculation of characteristic lines of the three-dimensional ionized field of direct current transmission line considers the influence of the space charges and is more accurate in calculation result; and moreover, compared to the finite element method, the method for calculation of characteristic lines of the three-dimensional ionized field of direct current transmission line greatly increases the update efficiency of charges and is obviously better than the finite element method on the computational efficiency.

The invention relates to a system for mensurating the density of an ion current on the ground of an alternating current / direct current parallel electric transmission line and a mensuration method thereof and belongs to the technical field of electromagnetic environment of a high-tension transmission line. The system mainly comprises three parts of an ion current plate, an oscillograph and a computer stored with an ion current density analyzing program, which are connected sequentially, The method comprises the following steps: calibration data of the ion current plat is read; sampling frequency of an oscillograph is arranged; frequency spectrum is carried out on sampling data; peak value frequency is searched; direct current component is extracted; the density of a direct current composition of the ion current is calculated and is subjected to harmonic analysis; the density of an alternating current composition of the ion current is calculated; and the frequency spectrum of the density of the ion current is stored. The system for mensurating the density of the ion current on the ground of the alternating current / direct current parallel electric transmission line is successfully used to mensurate the component of the direct current component and the alternating current component of the ion current on the ground of the alternating current / direct current electric transmission line.

Ion sources and methods for generating an ion beam with a controllable ion current density distribution. The ion source includes a discharge chamber and an electromagnet adapted to generate a magnetic field for changing a density distribution of the plasma inside the discharge chamber and, thereby, to change the ion current density distribution.

The invention discloses an ion spatial electric current density-based direct current transmission line mountain fire monitoring device which comprises an ion electric current density and environment parameter monitoring module for measuring ion electric current density, wind speed and wind direction, temperature, humidity and atmospheric pressure of a direct current transmission line, a mountain fire judging and early-warning module for judging whether a mountain fire exists or not according to the ion electric current density and the environment parameter, a communication module for transiting early warning information and receiving status instructions of the ion electric current density and environment parameter monitoring module, a control center for receiving the early warning information from the communication module to control each status instruction and acousto-optic alarm instruction of the ion electric current density and environment parameter monitoring module, and an acousto-optic alarm module for informing operators to report to power dispatching persons whether to stop using the line or dispatch line maintainers to remove hidden danger or not according to the early warning information received by the control center. The device is convenient to use and maintain, can stably monitor the basic environment parameters around the direct current transmission line running in case of high voltage such as wind speed, wind direction, temperature, humidity, atmospheric pressure and the like, computes the ion electric current density nearby measure points according to the basic parameters such as the wind speed and the wind direction, judges the mountain fire nearby the transmission line according to the ion electric current density, transmits the alarm information to the control center by the wireless communication unit, and timely prompts operators on duty by the acousto-optic alarm information which cooperatively controls a master computer.

An ion beam system (100) includes a grid assembly (300) having a substantially elliptical pattern of holes to steer an ion beam (108) comprising a plurality of beamlets to generate an ion beam (108), wherein the ion current density profile (700, 900, 1100, 1200) of a cross-section of the ion beam (108) is non-elliptical. The ion current density profile (700, 900, 1100, 1200) may have a single peak that is symmetric as to one of the two orthogonal axes of the cross-section of the ion beam (108). Alternatively, the single peak may be asymmetric as to the other of the two orthogonal axes of the cross-section of the ion beam (108). In another implementation, the ion current density profile may have two peaks on opposite sides of one of two orthogonal axes of the cross-section of the ion beam (108).; Directing the ion beam (108) on a rotating destination work-piece (104) generates a substantially uniform rotationally integrated average ion current density at each point equidistant from the center of the destination work-piece (104).

The invention belongs to the technical field of measurement of high pressure gas discharge electromagnetism, and discloses a measuring device and method of roughness coefficient of a high-voltage conducting wire. The measuring device is characterized in that: a cylindrical electrode is horizontally placed on a bracket, and is electrically grounded; the to-be-tested high-voltage conducting wire is horizontally fixed on support rods, and is coaxial with the cylindrical electrode; the probe of a direct-current electric field measuring device is placed in a circular hole in the cylindrical electrode, and is parallel and level with the inner surface of the cylindrical electrode; the to-be-tested high-voltage conducting wire is connected with the output end of a high-voltage direct current power supply, a synthesis electric field is formed between the inner surface of the cylindrical electrode and the to-be-tested high-voltage conducting wire, and ion current is generated; one end of a sample resistance is connected with a metal thin film, and the other end of the sample resistance is grounded; a voltmeter is connected with the two ends of the sample resistance in parallel; the output voltage of the high-voltage direct current power supply is adjusted, so as to obtain the synthesis electric field intensity at the cylindrical electrode, the ion current density and the synthesis electric field intensity of the surface of the be-tested high-voltage conducting wire; the roughness coefficient of the to-be-tested high-voltage conducting wire is obtained according to the Peek formula. According to the measuring device and method of roughness coefficient of the high-voltage conducting wire, accurate measurement of the roughness coefficient of the to-be-tested high-voltage conducting wire can be achieved.

The invention relates to the technical field of film material preparation, and discloses an ion beam assisted deposition system. A plasma cathode electron gun based on pseudo spark discharge is adopted as the ion beam assisted deposition system; unlike a typical ion beam assisted deposition device, the plasma cathode electron gun has multiple electrode gaps, and therefore electron beams for the hollow cathode ionization process and the subsequent conduction ionization process can be effectively generated; the energy and the beam current density of the electron beams of a hollow cathode phase are controller through different breakdown methods, the iron mass resolution is high enough, and therefore ions of hydrogen atoms and ions of hydrogen molecules can be separated; the ion energy is low and ranges from several eV to several hundred eV; the ion beam current is high enough, and therefore it is guaranteed that the ion beam assisted deposition process can be conducted; the ion beam current is wide, the diameter of the beam current is 10 mm, the hydrogen ion current density is 1 microampere per square centimeter, and therefore a deposition experiment can be conducted on a large-area substrate; mass selection on the ions only depends on an electric field and does not depend on a magnetic field, the structure is compact, and therefore the atomic beam current or active gas molecule ion beam current can be effectively controlled.

The embodiment of the invention provides a plasma thruster steady-state ion flow field measurement device and a measurement method and belongs to the technical field of steady-state ion flow field measurement. The device comprises a measurement module, a power supply module and a probe assembly, the probe assembly comprises a probe, a probe support and an electric rotary table, the probe comprisesan insulation shell, an ion receiving pole, an incident gate and an emergent gate, one end of the insulation shell is open, the incident gate is located at the opening of the insulation shell, the emergent gate is located at the middle part of the inner cavity of the insulation shell, the ion receiving pole is located at one section, far away from the incident gate, in the inner cavity of the insulation shell, an incident hole of the incident gate and an emergent hole of the emergent gate are coaxial, the ion receiving pole, the incident gate and the emergent gate are mutually insulated, theinsulation shell is fixed on the probe support, and the electric rotary table is used for driving the probe support to rotate around the incident hole of the incident gate. The device provided by theembodiment of the invention can obtain an ion current density distribution function on each azimuth angle of a measurement point by enabling the probe to rotate around the measurement point, and a vector angle of an ion velocity is obtained at the same time.

A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA / cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film which is excellent in film quality can be deposited by a low-temperature treatment and highly-reliable capacitance element and semiconductor device can be manufactured.

The invention relates to a direct-current combined field intensity and ion current density synchronization measurement system based on wireless communication. The system comprises at least 10 direct-current combined field intensity probes, 10 ion current density probes, one upper computer and one PC terminal. A built-in lithium battery is used to provide power for the direct-current combined field intensity probes, the ion current density probes and the upper computer so that long-time field measurement can be achieved. Each direct-current combined field intensity probe and each ion current density probe are communicated with the upper computer through using a wireless communication module. The upper computer and the PC terminal are connected through a USB connecting line. Measurement arrangement and a measuring point position can be conveniently adjusted so that operating efficiency is greatly increased and labor intensity is reduced. The system supports multiple devices, synchronously measures direct-current combined field intensity and ion current density in a high precision mode and really reflects a level and distribution of the direct-current combined field intensity and the ion current density so that an important basis is provided for extra / ultra-high-voltage direct current transmission project electromagnetic environment monitoring, evaluation and influence research.

The invention discloses a method and device for testing atmospheric ion mobility.The method includes the steps that the distance d between an upper pole plate and a lower pole plate and ambient air pressure, temperature and relative humidity are determined; an equation set of the electrode field Ed of the lower pole plate and the voltage VT of the upper pole plate is determined, the equation set of Ed and VT is jointly solved to obtain ion mobility k, and the voltage of Vco and VA is adjusted so that a corona inception thin wire network can conduct corona discharge; VT is adjusted so that corona charges can reach the lower pole plate through the upper pole plate; the electric field intensity Ed and the ion current density J at the lower pole plate are measured; VT, Ed and J are substituted to an equation of the ion mobility k, and the ion mobility is obtained.According to the method and device for testing the atmospheric ion mobility, the ion mobility is obtained directly through strict equation solving, it is unnecessary to suppose that E0=0, and thus the result is more accurate; the ion mobility can be obtained just through a group of testing data, and it is unnecessary to measure a large number of points to find a curve with IT changing but the ion current density J of a testing region tending to be saturated.

The invention provides a method for calculating a corona ion flow field of a high-voltage direct-current transmission line under smog conditions, the method comprising the steps of applying an optimized simulation charge method to calculate a nominal electric field strength; applying a flux line method to calculate the composite field strength and charge density of the transmission line without considering smog; calculating the charge of suspended droplets and haze particles to obtain the total charge density; calculating the surface charge density and A value of the conductor considering smog. The total synthetic field strength and ion current density are calculated by the flux line method. This method can quickly calculate the relevant parameters in the ion flow field of a high-voltage direct-current transmission line in smog weather, such as synthetic electric field strength, ion current density, space charge density and so on, and can meet the engineering requirements. The calculation results can provide a reference for the corona effect of high-voltage direct-current transmission lines when smog is considered in the planning and design of high-voltage direct-current transmission lines.

The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.

The invention discloses a Hall thruster thrust vector eccentricity calculation method. The method comprises the following steps of 1, measuring the ion current density of a Hall thruster plume region by adopting a Faraday probe; 2, analyzing the contribution of ion current density to thrust vector eccentricity; 3, establishing a space ion current density curved surface model of the Hall thruster plume region; 4, calculating the curved surface model by adopting a weighted least square method to obtain a nonlinear equation set for calculating the eccentricity of the thrust vector; and solving the nonlinear equation set by adopting a broydn rank method, and carrying out repeated iterative calculation through an iterative equation to obtain a thrust vector eccentricity result. According to the method, the thrust vector eccentricity is calculated by analyzing the contribution of the ion current density at different included angles with the axis of the thruster to the thrust vector.

The invention discloses an optimal design method of an ion current measurement device applicable to different voltage classes. The optimal design method comprises the following steps of 1) calculatingan ion flow field around a wire in a DC power transmission line, and extracting ion current density nearby ground as a boundary condition of an ion current density measurement error analysis model; 2) building the ion current density measurement error analysis model according to a field-circuit coupling method; 3) selecting a sampling resistor of a Wilson plate in a measurement platform; and 4) simulating ion current density of the Wilson plates in different sizes around the wire in the DC power transmission line, analyzing influence of length, width and thickness of the Wilson plates on an ion current density measurement error, and building an ion current measurement device with the current voltage class according to the corresponding length, width and thickness of the Wilson plate whenthe error is minimum. With the ion current measurement device obtained by the design of the method, the accuracy of ion current measurement of the high-voltage DC power transmission line can be effectively improved.

A closed loop exit hole is formed in a magnetically permeable end wall (2) of an enclosure (1) of a closed electron drift ion source. Parts of this end wall separated by the exit hole serve as pole pieces (7 and 8) of the magnetic system and define the first pole gap. The magnetic system includes pole pieces (9 and 10), which define the second pole gap made in the form of a closed loop exit hole and arranged along the direction of ion emission. Magnetomotive force sources (5 and 6) are located in space between two groups of magnetic terminals. The ratio of width of each pole gap and distance between pole pieces of the first (7 and 8) and second (9 and 10) magnetic gaps along the direction of ion emission is not less than 0.05.The invention allows the intensity of the generated ion beam and the energy of ions to be increased, and this is provided by the homogeneous distribution of ion current density across the ion beam section.

The invention provides a DC field conductor structure of a + / - 160 kV flexible DC converter station. The DC field conductor structure comprises at least one DC field conductor and electrical devices where the DC field conductors can be erected on. The top of each electrical device is provided with a fixing point for installation of the DC field conductor. The distance between each fixing point and the mounting surface of the corresponding electrical device ranges from 6.5 meters to 7.5 meters. In this way, the DC field conductor will not generate coronas or the generated coronas are small, the DC field conductor is not prone to malfunction and damage, and the reliability and stability of the flexible DC converter station are improved. In addition, on the premise of not increasing corona loss, the total electric field strength of the ground below the conductor, the ion current density of the ground below the conductor and limiting values of electromagnetic environment such as radio interference generated by the conductor can be met, the electromagnetic pollution is little, the design scheme of the electrical devices in a DC transmission project is optimized, and the construction cost of the electrical devices is saved.

A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA / cm<2 >are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film which is excellent in film quality can be deposited by a low-temperature treatment and highly-reliable capacitance element and semiconductor device can be manufactured.

The invention belongs to the field of plasma diagnosis and relates to an integrated probe diagnosis system circuit module, a diagnosis system and a diagnosis method. Plasma diagnosis is the technologyfor measuring plasma parameters by an experimental method and is an important means for researching physical properties of plasmas. Diagnosis methods comprise a probe method, a microwave method, a laser method, a spectrum method, an optical method and a particle beam method, wherein the probe method is the most common method. Plasma parameters such as the electron temperature, the electron concentration, the ion concentration, the saturated ion current density and the space potential of the plasmas can be obtained through a probe method. Common probes comprise a Langmuir probe, a variant of the Langmuir probe, namely a Faraday probe and a transmitting probe. The integrated probe diagnosis system circuit module is advantaged in that probe circuits are integrated together, signals are shielded in a unified manner, so the use process of the probes can be greatly simplified.

The invention discloses an ion gate control method for automatically enriching ions. The ion gate control method is used for improving the detection sensitivity of an ion mobility spectrometry. Duringthe opening period of the ion gate, the two groups of gate electrodes keep the same potential, and a uniform initial electric field is formed in the ion migration tube; when the ion gate is closed, the potential of one group of gate electrodes is increased, so that the potential is kept the same as that of the annular electrode adjacent to the ion gate in the ionization region, and an ion enrichment electric field which is gradually reduced in the direction from the ion source to the ion gate is formed in the ionization region; the intensity of the ion enrichment electric field is lower thanthat of the initial electric field, and the ion number density is increased in the process that ions generated by the ionization source move towards the ion gate; and when the ion gate is opened again, the initial electric field is recovered in the ionization region, and the ion current density of the enriched ions in front of the ion gate is enhanced, so that a stronger ion spectrum peak signal is obtained at the effective opening time of the same ion gate. According to the method, the ion migration tube does not need to be specially modified, and the method is simple and high in universality.

A method of producing flat products in aluminum alloys comprising:A) cold rolling to a hardened condition:B) applying a short-time ion beam surface treatment; andC) repeating steps A and B until a flat rolled product of a specified thickness is obtained.The surface treatment is preferably performed using an ion beam of atomic mass A≧10 amu having a power of between about 20-40 keV and an ion current density of between about 0.1-1 mA / cm2 for from about 5 to about 200 seconds. In the process of irradiation flat products may be continuously and uniformly displaced with respect to the ion beam.

The invention discloses a method for synchronously determining a boundary electric field and current density of a diode. The method comprises the following steps: 1, giving two electron current density initial values and an ion current density initial value; 2, substituting the initial value of the electron current density and the initial value of the ion current density into a Poisson equation to obtain a corresponding cathode boundary electric field value; 3, predicting an electron current density value; 4, obtaining a new cathode boundary electric field value based on the predicted electron current density value, and judging whether the new cathode boundary electric field value meets the required cathode boundary condition or not; 5, giving a new ion current density value, and executing the step 1 to the step 4 to obtain two anode boundary electric field values; 6, predicting an ionic current density value; 7, predicting an anode boundary electric field value, and judging whether the predicted anode boundary electric field value meets the required anode boundary condition or not; and 8, outputting the final electron and ion current density.