47results about How to "Reduce noise coupling" patented technology

Apparatus for suppressing noise and electromagnetic coupling in the printed circuit board of an electronic device includes an upper conductive plate and an array of conductive coplanar patches positioned a distance t₂ from the upper conductive plate. The distance t₂ is chosen to optimize capacitance between the conductive coplanar patches and the upper conductive plate for suppression of noise or electromagnetic coupling. The apparatus further includes a lower conductive plate a distance t₁ from the array of conductive coplanar patches and conductive rods extending from respective patches to the lower conductive plate.

The present invention relates to systems and methods that employ a novel balanced duplexer that can be utilized to facilitate concurrent signal transmission and reception. The systems and methods can be employed within mobile devices such as cell phones and utilize two-filters (e.g., acoustic) with substantially similar input/output impedances interfaced with two couplers (e.g., 3 dB hybrid), which provide isolation and maintain the duplexer's input/output impedance. The couplers interface the filters to front/back ends such as signal processors, transmitters and receivers. The novel aspects of the present invention mitigate the need to employ external directional couplers between the duplexer and front/back ends. In addition, the two-filter topology enables employment of lower powered rated filters. The systems and methods further provide for separation and isolation of transmitters and receivers, which reduces noise coupling and enables the transmitter and receiver to be placed within close proximity.

Provided a pre-chirped management based low-noise fiber femtosecond laser amplifier. The amplifier comprises an ytterbium-doped fiber dispersion management mode-locked laser (1), a spectral interference filter (2), a grating negative dispersive delay line (3), an ytterbium-doped fiber amplifier (4), and a grating pulse compressor (5). The ytterbium-doped fiber dispersion management mode-locked laser (1) generates a breathing soliton pulse sequence; the spectral interference filter (2) adjusts a center wavelength of the breathing soliton pulse sequence and enables it in the gain spectrum center of the ytterbium-doped fiber amplifier (4); the grating negative dispersive delay line (3) introduces a negative chirp into the adjusted breathing soliton pulse sequence, thereby obtaining a seed pulse; the ytterbium-doped fiber amplifier carries out self-similar amplification on the seed pulse, thereby obtaining a parabolic pulse; and the grating pulse compressor (5) compresses the parabolic pulse and generates a femtosecond laser pulse. According to the high-frequency noise of a linear amplifier effectively inhibited by the pre-chirped management based low-noise fiber femtosecond laser amplifier disclosed by the present invention, a Fourier transform-limited femtosecond laser pulse with a narrow pulse width is obtained.

A DRAM is disclosed which includes a single ended bitline structure, a single ended global bitline structure, primary sense amplifiers with data storage and data write-back capability and with capability to decouple from the global bitlines, a full-wordline I/O structure where essentially all memory cell that belong to the same wordline are being operated on, and a pipelined architecture. The DRAM further includes a small voltage swing design. The primary sense amplifiers can include more than one amplification stages. Such a DRAM is suitable for applications in conjunction with processors as an embedded DRAM.

The invention provides a semiconductor device, which comprises an isolation structure which is positioned in a semiconductor substrate, a deep n-type doping well which is positioned in an MOS transistor region of n channel-conductive type in an active area, as well as an n-type MOS transistor which is formed on the semiconductor substrate, wherein the deep n-type doping well is positioned under a p-type doping well in the region and is electrically connected with n-type doping wells on two sides, and the ion doping concentration peak value of the deep n-type doping well and the doping ion concentration of the n-type doping wells at equal depth are equal in range. The invention also provides a method for forming the semiconductor device. By forming the deep n-type doping well in the region where the n-type MOS transistor is in the semiconductor substrate, the method realizes the longitudinal isolation of the n-type MOS transistor and the semiconductor substrate, as well as the transverse isolation of the semiconductor devices on two sides, and reduces the noise coupling in a hybrid integrated circuit.

An integrated circuit designed to reduce on-chip noise coupling. In one embodiment, circuit (60) includes the following: a circuit transformer (62) capable of converting a noise sensitive input reference clock signal to an output signal having a voltage compatible with a predetermined sink voltage logic level; and a biased receiver network (64) having a PFET current mirror (74) coupled with a NFET current (72), the biased receiver transistor network designed to multiply the transformer signal to offset a mutual coupling loss of the transformer. In at least one alternative embodiment, the input reference clock signal originates at an off-chip clock generator circuit (42) and the output signal from receiver (64) is input to a PLL (44). In another alternative embodiment, the transformer is a monolithic integrated transformer. Another alternative embodiment of the present invention is a method of reducing on-chip noise coupling.

The integrated circuit chip includes one silicon base board, at least one circuit, one fixed sealing ring, one earthing ring and at least one protecting ring. The circuit is formed on the silicon base board and has at least one I/O pad. The fixed ring formed on the silicon base board encloses the circuit and the I/O pad. The earthing ring formed between the silicon base board and the I/O pad is connected electrically to the fixed sealing ring. The protecting ring on the silicon base board and around the I/O pad is connected electrically to the fixed sealing ring.

An integrated circuit includes a first well of the first conductivity type formed in a semiconductor layer where the first well housing active devices and being connected to a first well potential, a second well of a second conductivity type formed in the semiconductor layer and encircling the first well where the second well housing active devices and being connected to a second well potential, and a buried layer of the second conductivity type formed under the first well and overlapping at least partially the second well encircling the first well. In an alternate embodiment, instead of the buried layer, the integrated circuit includes a third well of the second conductivity type formed in the semiconductor layer where the third well contains the first well and overlaps at least partially the second well encircling the first well.

The invention discloses a two-port testing method of an alternating current milliohm meter, which is used for measuring the resistance and comprises the following steps: firstly, one end of a coaxial-cable is connected with an excitation source circuit, a shielding layer of the coaxial-cable is connected with an earth wire of the excitation source circuit; secondly, one end of the other coaxial-cable is connected with a sampling circuit, a shielding layer of the coaxial-cable is connected with the negative terminal input of the sampling circuit, an inner core wire of the coaxial-cable is connected with the positive terminal input of the sampling circuit; thirdly, the other ends of the two coaxial-cables are respectively connected with two ends of a tested piece; fourthly, excitation current flows through inner cores of the coaxial-cables and then flows through the tested piece, at last flows back to an excitation source through the shielding layers of the coaxial-cables; fifthly, current of the sampling circuit flows through the inner cores of the coaxial-cables, and then flows through the tested piece, at last flows back to the sampling circuit through the shielding layers of the coaxial-cables. The invention reduces the area of the excitation circuit and the sampling circuit, effectively lowers the noise coupling, inhibits the magnetic field coupling interference, obviously improves the interference free performance, and increases the testing accuracy.