97results about How to "Raise the gate voltage" patented technology

In a method of forming a double gate device, a buried insulating layer having a thickness of less than about 30 nm is formed on a first substrate. A second substrate is formed on the buried insulating layer. A pad layer is formed over the second substrate. A mask layer is formed over the pad layer. A first trench is formed extending through the pad layer, second substrate, buried insulating layer and into the first substrate. The first trench is filled with a first isolation. A second trench is formed in the first isolation and filled with a conductive material. An MOS transistor is formed on the second substrate. A bottom gate is formed under the buried insulating layer and self-aligned to the top gate formed on the second substrate.

A connection device for connecting a load to a power supply, comprising at least first and second current control devices arranged in parallel between the power supply and the load, and a controller arranged to switch the current control devices on in sequence for temporally overlapping on periods.

A charge pump circuit utilizes active feedback control circuits to control the currents produced by sinking and sourcing current sources. The feedback control circuits may regulate the drain voltages of sinking and sourcing current source transistors to make them approximately equal to respective reference voltages received by the feedback control circuits. The charge pump circuit may utilize multiple supply voltages, with a higher supply voltage such as a 3.3 V supply voltage being used to drive current source transistors, and a lower supply voltage such as a 1.8 V supply voltage being used to drive switches in a switching section.

A squeezable tail current source for use in a differential operational amplifier is disclosed that regulates the current through a main input differential pair while preventing output distortion and allowing high linearity. The squeezable tail current source includes a first transistor pair that replicates a main input transistor pair, wherein both the first transistor pair and the main input transistor pair receive a common voltage input at their respective gates. The squeezable tail current source also includes a second transistor pair, a bias transistor, a first current source, a folding transistor, and a second current source that biases the folding transistor. These components are configured such that current through the main input transistor pair is maintained as the voltage input varies. In addition, the second current source and the folding transistor isolate the bias transistor and the second transistor pair from a drain voltage of the first transistor pair, thereby causing the first transistor pair and the main input transistor pair to have a common drain bias, which prevents output distortion and allows high linearity to be achieved.

A semiconductor memory device that can achieve high-speed operation or that is highly integrated and simultaneously can achieve high-speed operation is provided. Transistors are disposed on both sides of diffusion layer regions to which capacitor for storing information is connected and other diffusion layer region of each transistor is connected to the same bit line. When access to a memory cell is made, two transistors are activated and the information is read. When writing operation to the memory cell is carried out, two transistors are used and electric charges are written to the capacitor.

Electric charge is stored, in accordance with a bias voltage, in a gate of a transistor performing switching operation between an input terminal and an output terminal, and the gate is brought into an electrically floating state at the time of completing the storage of electric charge in the gate. One electrode of a capacitor is connected to the gate in an electrically floating state, and the potential of the other electrode of the capacitor is increased, so that the voltage of the gate is increased using capacitive coupling. The potential of the gate of the transistor is increased, and the bias voltage is sampled without being decreased. Each of the transistor performing switching operation and a transistor connected to the gate of the transistor is a transistor with an extremely low off-state current.