81results about How to "Increase semaphore" patented technology

Regular data inputted / outputted to / from external terminals is read / written to / from a regular cell array, and parity data is read / written from / to a parity cell array. Since the parity data is generated by a parity generation circuit, it is difficult to write a desired pattern to the parity cell array. The regular data and the parity data are exchanged with each other by a switch circuit, so that the regular data can be written to the parity cell array and the parity data can be written to the regular cell array. This enables the write of desired data to the parity cell array. A test of the parity data can be easily conducted. In particular, a leakage test or the like between memory cells can be easily conducted.

The invention discloses a display panel and a display device. The display panel comprises an array substrate, a luminescent functional layer and a pixel definition layer, wherein the array substrate comprises a base substrate and a thin film transistor array; the luminescent functional layer comprises first electrodes, a luminescent material layer and second electrodes, and the first electrodes are positioned at a first electrode layer; the thin film transistor array is arranged at one side of the base substrate; the first electrode layer is arranged at one side of the thin film transistor array away from the base substrate and comprises a plurality of first electrodes; the pixel definition layer is arranged at one side of the first electrode layer away from the base substrate and comprises a plurality of opening areas and a plurality of non-opening areas surrounding the opening areas; the first electrodes are at least positioned in the opening areas, at least parts of the first electrodes have first areas and second areas, and the light transmittance of the second areas is greater than the light transmittance of the first areas; and a fingerprint recognition array comprises a plurality of fingerprint recognition sensors and is arranged at one side of the first electrode layer away from the pixel definition layer. The display panel and the display device disclosed by the invention can improve the fingerprint recognition accuracy.

A solid-state image pickup apparatus includes one or a plurality of photoelectric converting sections for photoelectric converting incident light into a signal charge on a semiconductor substrate, and a vertical charge-transferring section for charge-transferring the signal charge photoelectric converted at the photoelectric converting section, in which the vertical charge-transferring section is located under the photoelectric converting section on the side of the semiconductor substrate.

The invention discloses a display panel and a display device. The display panel comprises a color film substrate, an array substrate and collimating holes, wherein the array substrate is opposite to the color film substrate, the array substrate comprises a light sensing unit group; one light sensing unit group comprises n light sensing units, n is a positive integer, n is larger than or equal to 2, and all the light sensing units in the same light sensing unit group are connected in series; and the collimating holes are in one-to-one correspondence with the light sensing units. At least two light sensing units are connected in series, and a distance between the light sensing units can be adjusted through the design, so that overlapping of detection areas corresponding to the light sensingunits (also collimating holes) is realized, the same valley or ridge can be detected by using optical signals received by the at least two light sensing units, the semaphore used for detecting one valley or the ridge is increased without increasing the sizes of the collimating holes, and the detection precision is improved.

HfO2 films and ZrO2 films are currently being developed for use as capacitor dielectric films in 85 nm technology node DRAM. However, these films will be difficult to use in 65 nm technology node or later DRAM, since they have a relative dielectric constant of only 20-25. The dielectric constant of such films may be increased by stabilizing their cubic phase. However, this results in an increase in the leakage current along the crystal grain boundaries, which makes it difficult to use these films as capacitor dielectric films. To overcome this problem, the present invention dopes a base material of HfO2 or ZrO2 with an oxide of an element having a large ion radius, such as Y or La, to increase the oxygen coordination number of the base material and thereby increase its relative dielectric constant to 30 or higher even when the base material is in its amorphous state. Thus, the present invention provides dielectric films that can be used to form DRAM capacitors that meet the 65 nm technology node or later.

The invention provides a robot, a map construction method, a positioning method, electronic equipment and a storage medium. The map construction method of the robot includes the steps that the robot traverses a working region according to a preset rule, and an initial map is constructed according to images which are collected in real time when the robot traverses the working region, and comprisesa first map body and a second map body, wherein the first map body includes mapping of the working region and a map coordinate system, and the second map body includes extracted scene features based on the collected images and a geometric quantity of the scene features. The map is constructed without active signals by the adoption of a passive vision sensor, the vision sensor is low in power consumption and cost, the quantity of obtained signals is large, and the map construction of the intelligent robot is optimized.

The invention provides a flexible touch panel, which is arranged on an OLED substrate. The flexible touch panel comprises a conductive layer, a first insulated layer, a first electrode layer, a secondinsulated layer, a second electrode layer and a protective layer arranged in sequence. The conductive layer is arranged on an encapsulation layer of the OLED substrate; the first insulated layer andthe first electrode layer are superposed on the conductive layer in sequence; a capacitive structure is formed among the first electrode layer, the second insulated layer and the second electrode layer; the capacitive structure is used for sensing a touch signal; the conductive layer is used for inputting a first voltage signal; and the first voltage signal enables the conductive layer to repel anelectric field line generated by the first electrode layer and shield signal interference between the first electrode layer and a negative electrode layer of the OLED substrate. The invention provides a fabrication method for the flexible touch panel and a touch apparatus. The signal interference of an electric field of the negative electrode layer to a touch sensor can be shielded, so that the touch sensitivity is improved.

An infrared gas analyzer includes a flow sensor placed in a gas flow channel in a state in which two heating resistors are kept with a given spacing. The infrared gas analyzer further includes a substrate having a flat plane placed in parallel with the gas flow direction of the gas flow channel and a hole made in the flat plane of the substrate. The gas flow channel is provided in parallel with one face of a detector. The two heating resistors placed with a predetermined spacing on the substrate across the hole orthogonally to the gas flow direction.

A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.

Regular data inputted / outputted to / from external terminals is read / written to / from a regular cell array, and parity data is read / written from / to a parity cell array. Since the parity data is generated by a parity generation circuit, it is difficult to write a desired pattern to the parity cell array. The regular data and the parity data are exchanged with each other by a switch circuit, so that the regular data can be written to the parity cell array and the parity data can be written to the regular cell array. This enables the write of desired data to the parity cell array. A test of the parity data can be easily conducted. In particular, a leakage test or the like between memory cells can be easily conducted.

The invention provides a piezoresistive sensor, a pressure detecting device and an electronic device and belongs to the field of electronic technology equipment. The piezoresistive sensor comprises asubstrate (12) and a half bridge piezoresistive sensing unit; the half bridge piezoresistive sensing unit comprises two bridge arms (6, 7), two bridge arms (6, 7) are connected in series; The connecting ends of the bridge arms (6, 7) lead to the signal collecting end (IN); the open ends of the two bridge arms (6, 7) respectively lead to the excitation signal applying end; each of the bridge arms (6, 7) includes at least one a resistor unit (101, 102, 103, 104), a resistor unit (101, 102, 103, 104) on the substrate (12), and two bridge arms (6, 7) including a resistor unit (101, 102, 103, The number of 104) is the same. This allows the piezoresistive sensor to suppress temperature drift and increase the amount of signal when the pressure detection function is implemented, and the internal space requirements of the entire electronic device are relatively low, and it is easy to promote.

A solid-state image pickup element has: a photoelectric converting film which is stacked above a semiconductor substrate; plural photoelectric converting elements which are arranged in the row direction and the column direction on the semiconductor substrate, and signal charge accumulating portions in which signal charges generated in the photoelectric converting film are accumulated; vertical transfer paths which are formed in the semiconductor substrate, and which transfer signal charges accumulated in the photoelectric converting elements and the signal charge accumulating portions, in the column direction; a horizontal transfer path which transfers the signal charges transferred from the vertical transfer paths, in the row direction; and an output section which outputs color signals corresponding to the signal charges transferred from the horizontal transfer path. The vertical transfer paths are formed so that two of them are disposed between the photoelectric converting elements adjacent to each other in the row direction, and between the signal charge accumulating portions, and they are formed so as to meander in the column direction between the columns.

The invention discloses a fingerprint identification module driving method and a display device, wherein the driving method and the display device relate to the field of displaying technology. The fingerprint identification module comprises a plurality of fingerprint scanning lines, a plurality of fingerprint signal lines, a plurality of fingerprint identification units and a fingerprint identification driving circuit. The fingerprint identification units in one line are electrically connected the same fingerprint scanning line. The driving method at least comprises a first working period in which the fingerprint identification driving unit supplies a scanning driving signal to at least two fingerprint scanning lines each time in the extending direction of the fingerprint signal line. Furthermore at least four fingerprint scanning lines which are driven to perform scanning in two adjacent times at least comprise the same fingerprint scanning line. According to the driving method and the display device, through an overlapping type scanning driving mode in the same scanning period, an effect of connecting the fingerprint identification units which perform repeated scanning is realized, and the area of the fingerprint identification unit is enlarged, thereby increasing the signal amount of the fingerprint identification unit and improving accuracy and detecting effect in fingerprint identification.

The invention provides a display device, a display panel and a manufacturing method thereof, and relates to the technical field of display. The display panel comprises an array substrate, a color filmsubstrate and a backlight module, the array substrate comprises a substrate body and a photoelectric sensing device, the substrate body is provided with a fingerprint recognition area, and the photoelectric sensing device is located in the fingerprint recognition area; the color film substrate and the array substrate are arranged in a box-to-box manner; and the backlight module is located on theside, away from the array substrate, of the color film substrate and provided with a backlight source, and light emitted by the backlight source can penetrate through the fingerprint recognition area.According to the display panel, the fingerprint detection precision can be improved.

A solid-state imaging device can increase the amount of signal charge accumulation in a photodiode. The solid-state imaging device includes a gate electrode formed on a p-type semiconductor substrate. An n-type signal accumulation region accumulates the signal charge obtained through a photo-electrical conversion, and is formed in the semiconductor substrate so that a portion of the signal accumulation region is positioned below the gate electrode. An n-type drain region is positioned in the semiconductor substrate so that the n-type drain region is positioned opposite the signal accumulation region across the gate electrode. A p-type punch-through stopper region has a higher impurity concentration than the semiconductor substrate, and is formed in the semiconductor substrate so that the p-type punch-through region is positioned below the drain region, wherein an end of the punch-through stopper region is positioned closer to the signal accumulation region than the end of the drain region.

In a wireless communications system, it is important to realize a limiter operation by which a differential amplifier for amplifying a local signal may stably supply an output signal having a constant amplitude. However, when a signal handled by the system has a high frequency, a gain of the differential amplifier is reduced and the limiter operation may not be performed appropriately. The differential amplifier is configured employing a double cascode connection to enhance an output impedance, an upper transistor of the double cascode connection realizes enhancement in gain and frequency characteristics based on a positive feedback signal, and a lower transistor of the double cascode connection controls an operating point and suppresses an allowable output voltage range by operating in a linear region and based on a negative feedback signal to facilitate the limiter operation.