82results about How to "Excellent thermoelectric conversion performance" patented technology

A thermoelectric conversion material which contains a conductive polymer and a thermal excitation assisting agent is provided. In the thermoelectric conversion material of the present invention, the thermal excitation assisting agent is a compound that does not form a doping level in the conductive polymer, and the energy level of the LUMO (lowest unoccupied molecular orbital) of the thermal excitation assisting agent and the energy level of the HOMO (highest occupied molecular orbital) of the conductive polymer satisfy the following numerical formula (I): Numerical formula (I) 0.1eV <= | HOMO of the conductive polymer | - | LUMO of the thermal excitation assisting agent | <= 1.9eV (In numerical formula (I), | HOMO of the conductive polymer | and | LUMO of the thermal excitation assisting agent | express the absolute value of the energy level of the HOMO of the conductive polymer and the absolute value of the energy level of the LUMO of the thermal excitation assisting agent, respectively.)

A method for manufacturing a thermoelectric conversion element which has, on a substrate, a first electrode, a thermoelectric conversion layer and a second electrode. This method for manufacturing a thermoelectric conversion element comprises: a step wherein at least a conductive nanomaterial and a dispersion medium are subjected to a high-speed thin film spin system dispersion method, so that a dispersion for thermoelectric conversion layers containing the conductive nanomaterial is prepared; and a step wherein the thus-prepared dispersion for thermoelectric conversion layers is applied over the substrate and dried thereon. A method for producing a dispersion for thermoelectric conversion layers, wherein at least a conductive nanomaterial and a dispersion medium are subjected to a high-speed thin film spin system dispersion method.

A thermoelectric transducing material according to this invention includes a layered cobaltite based substance represented by the chemical formula AxCoO2, wherein A consists of an element or element group selected from alkali metal elements and alkali earth group elements and is compositionally modulated in a thickness-wise direction of layers in a structure of the layered cobaltite based substance.

A thermoelectric conversion element in which one end of an n-type thermoelectric conversion material and one end of a p-type thermoelectric conversion material are each bonded to a conductive substrate using a bonding agent, the n-type thermoelectric conversion material and the p-type thermoelectric conversion material being specific silicides, the bonding agent being a conductive paste containing conductive metals consisting of silver and at least one noble metal selected from the group consisting of gold, platinum, and palladium, as well as a thermoelectric conversion module comprising a plurality of these thermoelectric conversion elements and having a specific structure, achieve excellent thermoelectric conversion performance in an intermediate temperature range of room temperature to about 700° C., and performance degradation hardly occurs even when electric generation is repeated, making it possible to maintain the excellent performance over a long period of time.

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-n-zQ'nSez, where Q' is at least one selected from the group consisting of O and S, 0<x@0.5, 0<n@2 and 0@z<2.

This thermoelectric material is provided with a semiconductor substrate, a semiconductor oxide film that is formed on the substrate, and a thermoelectric layer that is arranged on the oxide film. The semiconductor oxide film is provided with a first nano-opening, and the thermoelectric layer is in the form of a plurality of semiconductor nano-dots piled up on the first nano-opening so as to have a particle packed structure. At least some of the plurality of semiconductor nano-dots have second nano-openings formed in the surfaces thereof, and are connected with each other through the second nano-openings, with the crystal orientations thereof being aligned with each other. This thermoelectric material can be produced through: a step wherein a semiconductor substrate is oxidized, thereby forming a semiconductor oxide film thereon; a step wherein a first nano-opening is formed in the oxide film; and a step wherein a plurality of semiconductor nano-dots are piled up on the first nano-opening by epitaxial growth. A thermoelectric material having excellent thermoelectric conversion performance can be achieved by this configuration.

An electrically conductive composition, containing (A) a carbon nanotube, (B) an electrically conductive polymer, and (C) an onium salt compound, an electrically conductive film using the composition, and a method of producing the electrically conductive film.

A thermoelectric conversion device having a high thermoelectric conversion performance. In the thermoelectric conversion device, electrodes are arranged unlike the arrangements steered by conventional technical knowledge so that current flows in the interlayer direction of a laminar material. A thermoelectric conversion film is epitaxially formed. An electrically conductive layer and an electric insulating layer are alternated. Each electrically conductive layer has an octahedron crystal structure in which a transition metal atom M is positioned at the center and oxygen atoms are positioned at the vertices. The electric insulating layer is made of a metal element or crystalline metal oxide. The c-axis of the laminar material of the electrically conductive layer and electric insulating layer is parallel to the in-plane direction of the base, and the pair of electrodes are arranged so that current flows along the c-axis.

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-z-pXnQ′pTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q′ is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0≦m≦1; 0≦n≦7; 0<z≦2 and 0<p≦2.

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-zXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Pd, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, 0<x<1, 0<y<1, 0≦m≦1, 0≦n<9 and 0<z≦2.

The present invention discloses a novel compound semiconductor for use in a solar cell or as a thermoelectric material, among others, and a usage for same. The compound semiconductor according to the present invention can be represented by following chemical formula 1. [Chemical formula 1] InxCo4Sb12-n-zQ'nTez, wherein in the chemical formula 1, Q' is at least one element selected from a group consisting of O, S, and Se, and x is more than 0 and less than or equal to 0.5,n is more than 0 and less than or equal to 2, and z is more than 0 and less than or equal to 2.