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Thermoelectric material

A technology of thermoelectric materials and cubic crystals, applied in the direction of thermoelectric device lead-out wire materials, copper compounds, inorganic chemistry, etc., can solve the problems of unsuitable thermoelectric materials and low ZT value, and achieve stable thermoelectric conversion performance and excellent thermoelectric conversion performance Effect

Active Publication Date: 2015-09-02
LG CHEM LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, see these two results, quite good ZT values ​​are observed between 600°C and 727°C, but very low ZT values ​​are found at temperatures below or equal to 600°C
Although a thermoelectric material has a high ZT value at a high temperature, if the thermoelectric material has a low ZT value at a low temperature, such a thermoelectric material is not preferable, in particular, it is not suitable for a thermoelectric material for power generation

Method used

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Examples

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Embodiment 1

[0129] Based on the chemical formula Cu 2.01 Se Cu and Se in powder form were weighed and placed in an alumina mortar followed by mixing. The mixed materials were placed in a die to form a pellet which was placed in a fused silica tube and vacuum sealed. Furthermore, the product was placed in a box furnace and heated at 500° C. for 15 hours, and after heating, the product was slowly cooled to room temperature to obtain a compound.

[0130] In addition, the Cu 2.01 A Se compound was filled in a die for hot pressing, and hot pressing sintering was performed under vacuum at 650° C. to obtain a sample of Example 1. In this case, the sintered density is at least 98% of theoretical.

Embodiment 2

[0132] Based on the chemical formula Cu 2.025 Se Weighed Cu and Se in powder form, mixed and synthesized by the same procedure as in Example 1 to obtain a compound. Furthermore, this compound was sintered by the same procedure as in Example 1 to obtain a sample of Example 2.

Embodiment 3

[0134] Based on the chemical formula Cu 2.05 Se Weighed Cu and Se in powder form, mixed and synthesized by the same procedure as in Example 1 to obtain a compound. In addition, the compound was sintered by the same procedure as in Example 1 to obtain a sample of Example 3.

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Abstract

Disclosed is a method of manufacturing a thermoelectric material having high thermoelectric conversion performance at a wide temperature range. The method of manufacturing a thermoelectric material according to the present invention comprises the following steps: forming a mixture by mixing copper and selenium according to the following chemical formula 1: Cu_xSe; and forming the mixture by heat treating the mixture. In chemical formula 1, 2<x<=2.6. The thermoelectric material can include an induced nano DOT (INDOT) as a copper containing particle. Here, INDOT represents a particle with a diameter, for example, between 1 nanometer and 100 nanometers which is spontaneously generated during a thermal material formation process. This nano DOT, that is INDOT, can exist on a grain boundary of a semiconductor.

Description

technical field [0001] The present disclosure relates to thermoelectric conversion technology, and more particularly, to a thermoelectric conversion material having excellent thermoelectric conversion performance and a manufacturing method thereof. [0002] This application claims Korean Patent Application No. 10-2013-0107927 filed in the Republic of Korea on September 9, 2013, Korean Patent Application No. 10-2014-0091973 filed in the Republic of Korea on July 21, 2014, and Korean Patent Application No. 10-2014-0091973 filed in the Republic of Korea on July 21, 2014, and Priority of Korean Patent Application No. 10-2014-0117863 filed in the Republic of Korea, the disclosure of which is incorporated herein by reference. Background technique [0003] A compound semiconductor is a compound containing at least two types of elements instead of one type (for example, silicon or germanium) and used as a semiconductor. Various types of compound semiconductors have been developed a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/14H10N10/851H10N10/852H10N10/854
CPCH01L35/16H01L35/14C01G3/00C01P2002/72C01P2004/03C01P2006/32C01P2006/40C01B19/007H10N10/851H10N10/852
Inventor 高京门金兑训朴哲熙李载骑
Owner LG CHEM LTD
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