The embodiment of the invention discloses
silicon carbide flaw detection equipment, and belongs to the technical field of
semiconductor detection. According to the technical scheme, the equipment comprises a supporting frame, an objective table and an imaging device are arranged on the supporting frame, the imaging device is located above the objective table, and a through hole is formed in the objective table; a
first light source irradiating to the objective table is arranged at the position, between the imaging device and the objective table, of the supporting frame, and a transmission
light source irradiating to the objective table is arranged at the position, below the objective table, of the supporting frame; a polarized
light source irradiating the objective table is further arranged at the position, below the transmission
light source, of the supporting frame; a polarization tester is arranged at a position, below the imaging device, of the support frame; and the polarization tester can rotate and is separated from the right lower part of the imaging device. The invention can solve the problems that in the prior art, due to the fact that whether flaws exist on a
silicon carbide substrate or not is directly observed with naked eyes, detection is relatively strenuous and not accurate enough.