94results about How to "Avoid erasure" patented technology

A magnetic head for perpendicular recording without writing from the lateral sides of a mains pole and without erasing data on adjacent tracks. A magnetic disk storage apparatus using the magnetic head. The lateral side of the main pole of a magnetic head for perpendicular recording may have an inverted tapered shape obtained by forming a groove as a track portion to an inorganic insulating layer and then forming a magnetic layer and then flattening the upper surface. A leading edge, a trailing edge, or both lateral edges of the magnetic head may be tapered. The taper may be either smooth and linear or curved in profile.

Provided is a vehicle data updating method. A PC acquires railway basic data of train operation and converts the form of the railway basic data to obtain a data file, then the data file is written into an on-line programming device, and the on-line programming device updates the data file to a monitoring record plug-in. The monitoring record plug-in is located in a train operation monitoring device, and the monitoring record plug-in receives the sent data file and transmits the data file to the train operation monitoring device. By means of the technical scheme, the monitoring record plug-in is arranged in the train monitoring device, the on-line programming device is adopted to serve as an intermedium to update the vehicle data of a train to the monitoring record plug-in, thus erasure of an EPROM is avoided, and update of the vehicle data can be simply and conveniently achieved.

The invention relates to a preparation method of a memory and belongs to the technical field of semiconductors. The preparation of a control grid and a floating grid of a memory bit unit and a memory word line is sequentially completed on a semiconductor substrate, in addition, the etching on a second coupling conducting layer is completed step by step, and the preparation of lead-out electrodes of other semiconductor devices on the substrate is completed under the condition of not influencing the structure of the memory. In the method, the chip area of a split grid flash memory is effectively reduced through the word line sharing memory under the condition of maintaining the electric isolation performance of the chip unchanged, and meanwhile, the over erasing problem can also be avoided. In addition, in the preparation method of the memory provided by the invention, the memory array word line and the lead-out electrodes of other semiconductor devices on the substrate are synchronously completed, any process steps and process difficulty are not added, and the semiconductor structures of the memory and the like cannot be damaged and influenced in the preparation process.

A method of driving a plasma display panel to improve display brightness and luminescent efficiency. In the sustain periods, the same driving signal is sent to the sustain electrode X as well as the address electrode Ai at the same time to achieve the desired volume discharge effect. In addition, the structure of PDPs is modified to raise firing voltages between these electrodes, preventing erasure of the data written in the address periods.

The invention is directed to techniques for erasing data storage tape for reuse. In an embodiment, an erase head module for erasing data storage tape comprises a set of erase gaps and one or more servo read elements. The set of erase gaps is configured to coincide with data bands of the data storage tape to allow erasure of only the data bands of the data storage tape while not erasing servo bands of the data storage tape. The one or more servo read elements detect one of the servo bands of the data storage tape when the set of erase gaps are proximate the data bands of the data storage tape to allow the erase head module to accurately track the data bands with the set of erase gaps.

The invention discloses a memory structure which comprises two memory bit units and a word line positioned between the two memory bit units, wherein the two memory bit units are respectively provided with a floating gate and a control gate; the control gates are arranged above the floating gates at intervals; a tunneling oxide layer is arranged between the floating gates and the word line and is used for separating the floating gates and the word line; and a gate oxide layer is arranged between the word line and a semiconductor substrate and is used for separating the word line and the semiconductor substrate. In the memory structure, the two memory bit units share the same word line, thus the memory bit units are read, programmed and erased through applying different working voltages to the word line, the two control gates and source drain regions, the structure of the shared word line enables a gate-type flash memory to be used for reducing the area of a chip effectively under the condition that the electricity insulation performance of the chip is maintained to be changed.

Said method contains flush memory to proceed erasing operation using erasing block, file storing erasing block adopting log structure recorded file header added data object form, according to file header to proceed read write operation to file. The data modification is written in new physical address not original physical address. Even if in power down status in writing data process, system can very easy recover systematical data through rescanning and checking file header log information validity. Flush memory malposition writing method can ensure flush memory abrasion balance capable of effectively saving system memory and raising system performance.

The invention provides a sovereign network system architecture of a rear IP (Internet Protocol), equipment in the sovereign network system architecture of the rear IP adopts a novel network taking anidentity label as a center, and no IP network exists in the novel network; the sovereign network equipment further comprises an ID-ICN router and an EAN node, and the ID-ICN router is used for supporting inter-translation, addressing and network data transmission of different identities and content identifiers; the EAN node is used for allowing a user in a sovereign network to freely request othernetworks and Internet data outside the sovereign network in an authority range, allowing other sovereignty network users carrying a sovereignty network visa to access data in a sovereignty network, shielding all requests actively initiated by other networks and the Internet outside the sovereignty network, installing a related content auditing program in the EAN node, and carrying out preliminaryauditing and filtering on the content reaching the node. The sovereign network latches the user information and the behavior log by using the blockchain to prevent the data from being tampered.

The method forms a liquid-repellent film on a surface of a nozzle plate having nozzle apertures through which droplets of liquid are ejected. The method includes: a termination process step of carrying out a hydrogen termination process or a halogen termination process on a surface of a nozzle plate, at least a portion of the surface of the nozzle plate being made of a material containing silicon; and a liquid-repellent film formation step of forming a liquid-repellent film on the surface of the nozzle plate after the termination process step by bringing a liquid-repellent film raw material into contact with the surface of the nozzle plate while applying energy to the surface. Each molecule constituting the liquid-repellent film raw material has an unsaturated carbon bond at an end and has a liquid-repellent functional group. The liquid-repellent film is bonded to the surface of the nozzle plate through silicon-carbon bonds.