Preparation method of memory

Abstract

The invention relates to a preparation method of a memory and belongs to the technical field of semiconductors. The preparation of a control grid and a floating grid of a memory bit unit and a memory word line is sequentially completed on a semiconductor substrate, in addition, the etching on a second coupling conducting layer is completed step by step, and the preparation of lead-out electrodes of other semiconductor devices on the substrate is completed under the condition of not influencing the structure of the memory. In the method, the chip area of a split grid flash memory is effectively reduced through the word line sharing memory under the condition of maintaining the electric isolation performance of the chip unchanged, and meanwhile, the over erasing problem can also be avoided. In addition, in the preparation method of the memory provided by the invention, the memory array word line and the lead-out electrodes of other semiconductor devices on the substrate are synchronously completed, any process steps and process difficulty are not added, and the semiconductor structures of the memory and the like cannot be damaged and influenced in the preparation process.

Description

technical field [0001] The invention relates to a method for preparing a memory, in particular to a method for preparing a split-gate flash memory, and belongs to the technical field of semiconductors. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappears, and flash memory is...

AI Technical Summary

Problems solved by technology

Increasing the density of cells will increase the density of metal lines, which is difficult to manufacture because the required masking and etching steps will need to produce very fine line

Therefore, the scheme of increasing the density of memory cells by increasing the number of memory cells has very high requirements on the process, which is not suitable for popularization and promotion.

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