The invention relates to a
wafer stage encapsulation LED (
light emitting diode), and relates to LED encapsulation. The
wafer stage encapsulation LED is provided with an LED
chip, a lens and a lens bonding layer, wherein the LED
chip is provided with a substrate layer, a
doping semiconductor layer, a
semiconductor luminous layer, a conducting reflecting layer, an
electrode, an
insulation layer and a
coating medium, wherein the
semiconductor luminous layer is arranged between the first
doping semiconductor layer and the second
doping semiconductor layer; the conducting reflecting layer is arranged under the second doping semiconductor layer; the second
electrode realizes the electric conduction with the second doping semiconductor layer through the conducting reflecting layer; the first
electrode and the first doping semiconductor layer are directly connected; the insulation among the first electrode, the semiconductor luminous layer, the second doping semiconductor layer and the conducting reflection layer is realized by an
insulation layer; the
coating medium is arranged on a non-substrate region of the side wall of the LED
chip; a through hole is formed inside the substrate layer; the inner wall of the through hole is provided with a high-
reflectivity layer; the lens comprises a flat plate part and an
optical coupling part; the flat plate part is fixed onto the substrate layer; the
optical coupling part is arranged in the through hole of the substrate layer; in addition, the optical receiving surface of the
optical coupling part faces the first doping semiconductor layer.