100results about "Reliability increase by circuit redundancy" patented technology

Sequential storage circuitry for an integrated circuit is disclosed that comprises storage circuitry comprising: a first storage element for storing, during a first phase of a clock signal, a first indication of an input data value received by said sequential storage circuitry; a second storage element coupled to an output of said first storage element, for storing a second indication of said input data value during a second phase of said clock signal; and error detection circuitry for detecting a single event upset error in any of said first and second storage elements comprising: two additional storage elements for storing third and fourth indications of said input data value respectively in response to a pulse signal derived from said clock signal; comparison circuitry for comparing said third and fourth indications of said input data value; and further comparison circuitry for comparing during a first phase of said clock signal said first indication and at least one of said third and fourth indications, and for comparing during a second phase of said clock signal said second indication and at least one of said third and fourth indications; and output circuitry for correcting any detected errors in said storage circuitry and for outputting an output value; said output circuitry being responsive to no match by said comparison circuitry to output said first indication during a first phase of said clock signal and said second indication during said second phase of said clock signal, and said output circuitry being responsive to a match by said comparison circuitry to output a value in dependence upon comparisons performed by said further comparison circuitry; said output circuitry being responsive to a match by said further comparison circuitry during a first phase of said clock signal to output said first indication during said first clock cycle and to a no match to output an inverted value of said first indication; and said output circuitry being responsive to a match by said further comparison circuitry during a second phase of said clock signal to output said second indication during said second phase of said clock signal and to a no match to output an inverted value of said second indication.

A method for single event transient filtering in an integrated circuit device is described. The device comprises three sequential elements, each having a data input and a data output with each of the three data outputs coupled to one of three inputs of a voting gate. The method comprises generating first and second nominally equivalent logic signals in first and second SET domains, converting the first and second nominally equivalent logic signals into first, second and third nominally equivalent data channels, and transmitting the first, second and third nominally equivalent data channels to the data inputs of the first, second and third sequential elements.

An example integrated circuit includes a first memory array including a first plurality of data groups, each such data group including a respective plurality of data bits. The integrated circuit also includes a first error detection and correction (EDAC) circuit configured to detect and correct an error in a data group read from the first memory array. The integrated circuit also includes a first scrub circuit configured to access in a sequence each of the first plurality of data groups to correct any detected errors therein. Both the first EDAC circuit and the first scrub circuit include spatially redundant circuitry. The first EDAC circuit and the first scrub circuit may include buried guard ring (BGR) structures, and may include parasitic isolation device (PID) structures. The spatially redundant circuitry may include dual interlocked storage cell (DICE) circuits, and may include temporal filtering circuitry.

A radiation-tolerant flash-based FPGA switching element includes a plurality of memory cells each having a memory transistor and a switch transistor sharing a floating gate. Four such memory cells are combined such that two sets of two switch transistors are wired in series and the two sets of series-wired switch transistors are also wired in parallel. The four memory transistors associated with the series-parallel combination of switch transistors are all programmed to the same on or off state. The series combination prevents an “on” radiation-hit fault to one of the floating gates from creating a false connection and the parallel combination prevents an “off” radiation-hit fault to one of the floating gates from creating a false open circuit.

A chip is layered on a rewiring member. A plurality of connecting members and a plurality of redundant connecting members are arranged in the chip, and electrically connect the chip to the rewiring member. Redundant circuits are embedded in each of the rewiring member and the chip. When one of the connecting members is faulty, the redundant circuits cause one of the redundant connecting members to transmit a signal between the rewiring member and the chip, instead of the faulty connecting member. The connecting members have first and second subsets arranged in first and second regions, respectively. A distance between the rewiring member and the chip exceeds a predetermined threshold value in the first region in contrast to the second region. The first subset has a higher proportion of connecting members that the redundant circuits can replace with a subset of the redundant connecting members than the second subset.

An apparatus for interconnecting a first die and a second die of a multi-die device includes a master circuit block that interfaces with the first die of the multi-die device, a slave circuit block that interfaces with the second die of the multi-die device, a first memory in the slave circuit block, a second memory in the master circuit block, and a plurality of μbumps between the first die and the second die, wherein the master circuit block and the slave circuit block are configured to identify one of the μbumps as a faulty μbump, and store a first value that corresponds with the identified faulty μbump in the first memory.

The present technology relates to a semiconductor device which enables yield to be enhanced. A volatile logic circuit has a storage node, and stores inputted information. A plurality of non-volatile elements are connected to the storage node of the volatile logic circuit through the same connection gate, and control lines for control for these non-volatile elements are connected to the respective non-volatile elements, every non-volatile element. A plurality of non-volatile elements are connected to the volatile logic circuit through the same connection gate in such a way, thereby enabling the yield to be enhanced. The present technology can be applied to a semiconductor device.

The invention provides a power switch device for electronic systems equipped having a power module. The power switch device includes a first switch for activating a first signal, a second switch for activating a second signal, a logic judging module for receiving the first and second signals for logic algorithm processing, and a control module electrically connected to the electronic system and the logic judging module. The control module is adapted to generate and transmit on and off signals of the electronic system to the logic judging module. Further, the control module controls switching on the power module according to the off signal and the logic algorithm processing based on the first signal, and also controls switching off the power module according to the on signal and the logic algorithm processing based on the first and second signals.

The invention relates to a single event transient disturbance reinforced latch circuit and belongs to the field of circuit design. The single event transient disturbance reinforced latch circuit comprises a first lowpass filter unit and a latch. First way data input of a data input end is connected with a first input end of the latch. Second data input of the data input end is connected with a second input end of the latch through the first lowpass filter unit. The first lowpass filter unit is a circuit unit which is composed of a passive device and is used for removing a high-frequency signal. The first lowpass filter unit for removing the high-frequency signal is composed of the passive device, the filter capacity only needs to be greater than the maximum pulse width produced by single event transient disturbance, the working frequency of the latch circuit is not influenced, and a circuit structure is simple. The passive device itself does not produce the single event transient disturbance and an area and the power consumption of a storage unit are not increased, so the single event effect resistance of logic circuits such as the latch and a trigger can be effectively improved.

Homogenous dual-rail logic for DPA attack resistive secure circuit design is disclosed. According to one embodiment, an HDRL circuit comprises a primary cell and a complementary cell, wherein the complementary cell is an identical duplicate of the primary cell. The HDRL circuit comprises a first set of inputs and a second set of inputs, wherein the second set of inputs are a negation of the first set of inputs. The HDRL circuit has a differential power at a level that is resistive to DPA attacks.

A PLD having logic element row granularity redundancy is disclosed. The PLD includes a plurality of LABs arranged in an array and a plurality of horizontal and vertical inter-LAB lines interconnecting the LABs of the array. Each of the LABs further includes a predetermined number of logic elements and redundancy circuitry to replace a defective logic element with a non-defective logic element among the predetermined logic elements by shifting programming data intended to for the defective logic element to the non-defective logic element.

A circuit element includes a plurality of computation blocks connected at least partially in series for processing multi-bit numbers. Each of the computation blocks includes a plurality of transistors having characteristic threshold voltages. The circuit element is configured so that the transistors will each operate at a voltage below its threshold voltage. The circuit element includes a plurality of circuit sub-elements each having an output. The circuit sub-element outputs are connected together.