Product
Patsnap Eureka
For R&D, Patsnap Eureka makes reading and utilizing patents & technical documents easy.
Patsnap Eureka AIR
Designed for self-driven R&D workflows. Generate viable solutions, solve complex R&D challenges, empower your innovation with AI.
Patsnap Eureka Materials
Designed for material experts only. Revolutionize your material R&D, from search, analyze, to developing new materials.
Feature
TechResearch
Generate reliable direction feasibility study reports for your R&D in just a few steps.
TechSeek
Discover and master advanced knowledge NOW. Basics, ideas, possibilities, all at once.
TechMind
As an expert in R&D Theories, TechMind can generates customized viable solutions instantly.
TechRisk
Analyze your overall solution with one click, know your potential R&D risks in advance.
TechMonitor
Get weekly tech updates, stay abreast of the latest tech innovations and key insights.
Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
33 results about "Wall-plug efficiency" patented technology
Efficacy Topic
Property
Owner
Technical Advancement
Application Domain
Technology Topic
Technology Field Word
Patent Country/Region
Patent Type
Patent Status
Application Year
Inventor
In optics, wall-plug efficiency or radiant efficiency is the energy conversion efficiency with which the system converts electrical power into optical power. It is defined as the ratio of the radiant flux (i.e., the total optical output power) to the input electrical power.
Lighting device and method of lighting
There is provided a lighting device which emits light with an wall plug efficiency of at least 85 lumens per watt. The lighting device comprises at least one solid state light emitter, e.g., one or more light emitting diodes, and optionally further includes one or more luminescent material. In some embodiments, the output light is of a brightness of at least 300 lumens. In some embodiments, the output light has a CRI Ra of at least 90. Also, a method of lighting, comprising supplying electricity to a lighting device which emits light with a wall plug efficiency of at least 85 lumens per watt.
Owner:IDEAL IND LIGHTING LLC
Heat sinks and lamp incorporating same
ActiveUS20110089830A1Improve efficiencyGood indexLight source combinationsPoint-like light sourceEngineeringSolid-state lighting
A lamp comprising a solid state light emitter, the lamp being an A lamp and providing a wall plug efficiency of at least 90 lumens per watt. Also, a lamp comprising a solid state light emitter and a power supply, the emitter being mounted on a heat dissipation element, the dissipation element being spaced from the power supply. Also, a lamp, comprising a solid state light emitter and a heat dissipation element that has a heat dissipation chamber, whereby an ambient medium can enter the chamber, pass through the chamber, and exit. Also, a lamp, comprising a light emissive housing at least one solid state lighting emitter and a first heat dissipation element. Also, a lamp comprising a heat sink comprising a heat dissipation chamber. Also, a lamp comprising first and second heat dissipation elements. Also, a lamp comprising means for creating flow of ambient fluid.
Owner:IDEAL IND LIGHTING LLC
Electrically isolated vertical light emitting diode structure
ActiveUS20100201280A1Improve thermalImprove conductivitySemiconductor/solid-state device detailsSolid-state devicesIsolation layerProjection system
A light emitting device is provided having high luminous output while maintaining high wall plug efficiency, wherein the high thermal and electrical conductivity paths of the device are separated during the semiconductor wafer and die level manufacturing step. The device includes an electrical conducting mirror layer, which reflects at least 60% of generated light incident on it, and an isolation layer having electrical insulating properties and thermal conducting properties. A first electrode, which is not in contact with the main semiconductor layers of the device, is located on the mirror layer. A light emitting module, system and projection system incorporating the light emitting device are also described, as is a method of manufacture of the device.
Owner:LUMILEDS HLDG BV
Heat sinks and lamp incorporating same
ActiveUS9030120B2Improve efficiencyGood indexPlanar light sourcesLighting support devicesEngineeringSolid-state lighting
A lamp comprising a solid state light emitter, the lamp being an A lamp and providing a wall plug efficiency of at least 90 lumens per watt. Also, a lamp comprising a solid state light emitter and a power supply, the emitter being mounted on a heat dissipation element, the dissipation element being spaced from the power supply. Also, a lamp, comprising a solid state light emitter and a heat dissipation element that has a heat dissipation chamber, whereby an ambient medium can enter the chamber, pass through the chamber, and exit. Also, a lamp, comprising a light emissive housing at least one solid state lighting emitter and a first heat dissipation element.
Owner:IDEAL IND LIGHTING LLC
Polarization doping in nitride based diodes
A light emitting device comprising a three-dimensional polarization-graded (3DPG) structure that improves lateral current spreading within the device without introducing additional dopant impurities in the epitaxial structures. The 3DPG structure can include a repeatable stack unit that may be repeated several times within the 3DPG. The stack unit includes a compositionally graded layer and a silicon (Si) delta-doped layer. The graded layer is compositionally graded over a distance from a first material to a second material, introducing a polarization-induced bulk charge into the structure. The Si delta-doped layer compensates for back-depletion of the electron gas at the interface of the graded layers and adjacent layers. The 3DPG facilitates lateral current spreading so that current is injected into the entire active region, increasing the number of radiative recombination events in the active region and improving the external quantum efficiency and the wall-plug efficiency of the device.
Owner:CREELED INC
Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
InactiveUS20060267043A1Semiconductor/solid-state device manufacturingNanoopticsUltraviolet lightsPeak value
Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and / or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA / μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.
Owner:CREE INC
Polarization doping in nitride based diodes
Owner:CREELED INC
Lighting device and method of lighting
There is provided a lighting device which emits light with an wall plug efficiency of at least 85 lumens per watt. The lighting device comprises at least one solid state light emitter, e.g., one or more light emitting diodes, and optionally further includes one or more luminescent material. In some embodiments, the output light is of a brightness of at least 300 lumens. In some embodiments, the output light has a CRI Ra of at least 90. Also, a method of lighting, comprising supplying electricity to a lighting device which emits light with a wall plug efficiency of at least 85 lumens per watt.
Owner:IDEAL IND LIGHTING LLC
High brightness dense wavelength multiplexing laser
ActiveUS20150104180A1Efficiency lossDegrades beam qualityLaser detailsWavelength-division multiplex systemsResonant cavityMultiplexing
The present disclosure describes systems and methods for beam wavelength stabilization and output beam combining in dense wavelength multiplexing (DWM) systems. Systems and methods are described for performing beam wavelength stabilization and output beam combining in DWM systems while achieving increased wall-plug efficiency and enhanced beam quality. Interferometric external resonator configurations can be used to greatly increase the brightness of DWM system output beams by stabilizing the wavelengths of the beams emitted by the emitters of the DWM laser source. The resonant cavities described by the present disclosure provide advantages over the prior art in the form of decreased cost, increased wall plug efficiency and increased output beam quality. Particular implementations of the disclosure achieve increased wall plug efficiency and increased output beam quality through a combination of innovative cavity designs and the utilization of reflection diffraction elements for beam combining.
Owner:TRUMPF LASER GMBH CO KG
High power top emitting vertical cavity surface emitting laser
ActiveUS8247252B2Increase output powerModerate densityLaser detailsSemiconductor/solid-state device manufacturingVertical-cavity surface-emitting laserNear neighbor
A method of adjusting a power density in a laser device including a VCSEL array providing an increased power density at a high wall-plug efficiency in that the lateral design parameters are appropriately selected on the basis of a relationship that has been established for a specified vertical design, a corresponding process technology and specified operating conditions. Thus, the total output power, the power density, and the efficiency may be optimized independently from other design criteria and application requirements by tuning only the lateral size of the individual VCSEL elements and the pitch of nearest neighbors of the elements within the array. Hence, for a lateral size of less than 30 μm and a pitch of less than 80 μm, a highly efficient VCSEL array can be provided with a high power density, thereby optimizing manufacturing costs for the output power per chip area.
Owner:II VI DELAWARE INC
Laser pumped tunable lasers
InactiveUS20070274364A1High efficiency tunable outputEconomical and straight forward to implementLaser detailsAlexandrite LasersLight beam
A laser pumped tunable laser system is disclosed directed to achieving tunable outputs with high wall plug efficiencies. In particular, green laser pumped alexandrite lasers are discussed—both pulsed and CW—where the wall plug efficiencies of greater than 2% can be achieved using practical, commercially available pump lasers. In alternative approaches, frequency converted tunable radiation in the UV is achieved with high efficiency from compact, high beam quality devices.
Owner:DOBIN ANDREA
Pseudo-CW Quantum Cascade Laser System
InactiveUS20110216794A1Improve electro-optical conversion efficiencyHigher duty cycleNanoopticsLaser arrangementsRoom temperatureBiological activation
A laser system is proposed that is configured to provide a pseudo-CW signal at room temperature. The system utilizes an array of pulsed lasers that are controlled (in terms of turning “on” and “off”) to provide, in combination, a quasi-CW output signal. The activation of each individual laser is controlled to turn “on” and “off” in a predefined sequence, where at least one laser is “on” at any given point in time. Thus, by combining the outputs from the plurality of pulsed lasers onto a single output signal path, the resultant output signal from the system will be a pseudo-CW signal (the amount of “ripple” present in the signal controlled by factors such as the number of individual lasers in the plurality of lasers, the duty cycle of each individual laser, etc.). The duty cycle of the individual lasers can be controlled to provide a high power output signal (higher duty cycle), or provide a high wall-plug efficiency of the system (lower duty cycle).
Owner:GK TECHCOM
Heat sinks and lamp incorporating same
ActiveUS9217542B2Improve efficiencyGood indexLight source combinationsPoint-like light sourceEngineeringSolid-state lighting
A lamp comprising a solid state light emitter, the lamp being an A lamp and providing a wall plug efficiency of at least 90 lumens per watt. Also, a lamp comprising a solid state light emitter and a power supply, the emitter being mounted on a heat dissipation element, the dissipation element being spaced from the power supply. Also, a lamp, comprising a solid state light emitter and a heat dissipation element that has a heat dissipation chamber, whereby an ambient medium can enter the chamber, pass through the chamber, and exit. Also, a lamp, comprising a light emissive housing at least one solid state lighting emitter and a first heat dissipation element. Also, a lamp comprising a heat sink comprising a heat dissipation chamber. Also, a lamp comprising first and second heat dissipation elements. Also, a lamp comprising means for creating flow of ambient fluid.
Owner:IDEAL IND LIGHTING LLC
High power top emitting vertical cavity surface emitting laser
ActiveUS20100035372A1Increase output powerModerate power densityLaser detailsSemiconductor/solid-state device manufacturingVertical-cavity surface-emitting laserNear neighbor
A method of adjusting a power density in a laser device including a VCSEL array providing an increased power density at a high wall-plug efficiency in that the lateral design parameters are appropriately selected on the basis of a relationship that has been established for a specified vertical design, a corresponding process technology and specified operating conditions. Thus, the total output power, the power density, and the efficiency may be optimized independently from other design criteria and application requirements by tuning only the lateral size of the individual VCSEL elements and the pitch of nearest neighbors of the elements within the array. Hence, for a lateral size of less than 30 μm and a pitch of less than 80 μm, a highly efficient VCSEL array can be provided with a high power density, thereby optimizing manufacturing costs for the output power per chip area.
Owner:II VI DELAWARE INC
Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
ActiveUS20080142783A1Solid-state devicesSemiconductor/solid-state device manufacturingUltraviolet lightsPeak value
Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and / or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA / μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.
Owner:CREELED INC
Electrically isolated vertical light emitting diode structure
ActiveUS8309979B2Simple lightingLow costSemiconductor/solid-state device detailsElectric lighting sourcesElectricityIsolation layer
A light emitting device is provided having high luminous output while maintaining high wall plug efficiency, wherein the high thermal and electrical conductivity paths of the device are separated during the semiconductor wafer and die level manufacturing step. The device includes an electrical conducting mirror layer, which reflects at least 60% of generated light incident on it, and an isolation layer having electrical insulating properties and thermal conducting properties. A first electrode, which is not in contact with the main semiconductor layers of the device, is located on the mirror layer. A light emitting module, system and projection system incorporating the light emitting device are also described, as is a method of manufacture of the device.
Owner:LUMILEDS HLDG BV
Method of fabrication of a support structure for a semiconductor device
InactiveUS7189589B2Improve performanceReduce defect densityLaser detailsFrom solid stateElectrical conductorActive component
Owner:ARASOR ACQUISITION +1
High brightness dense wavelength multiplexing laser
ActiveUS9391713B2Increase brightnessImprove plugging efficiencyLaser optical resonator constructionSemiconductor laser arrangementsMultiplexingResonant cavity
The present disclosure describes systems and methods for beam wavelength stabilization and output beam combining in dense wavelength multiplexing (DWM) systems. Systems and methods are described for performing beam wavelength stabilization and output beam combining in DWM systems while achieving increased wall-plug efficiency and enhanced beam quality. Interferometric external resonator configurations can be used to greatly increase the brightness of DWM system output beams by stabilizing the wavelengths of the beams emitted by the emitters of the DWM laser source. The resonant cavities described by the present disclosure provide advantages over the prior art in the form of decreased cost, increased wall plug efficiency and increased output beam quality. Particular implementations of the disclosure achieve increased wall plug efficiency and increased output beam quality through a combination of innovative cavity designs and the utilization of reflection diffraction elements for beam combining.
Owner:TRUMPF LASER GMBH CO KG
Wavelength selective external resonator and beam combining system for dense wavelength beam combining laser
ActiveUS9306369B2Increase brightnessQuality improvementLaser optical resonator constructionSemiconductor laser arrangementsResonant cavityLight beam
Wavelength-selective external resonators can be used to greatly increase the output brightness of dense wavelength beam combining (DWBC) system beams by stabilizing the wavelengths of the beams emitted by the individual emitters of the DWBC laser source. The present invention pertains to external resonant cavities that utilize thin-film filtering elements as wavelength-selective elements in external resonators. The present invention further pertains to particular embodiments that utilize thin-film filtering elements in DWBC systems as both output beam coupling elements and wavelength selective elements. The present invention provides advantages over the prior art that include decreased cost, increased fidelity of wavelength selection, and increased wall plug efficiency.
Owner:TRUMPF LASER GMBH CO KG
Group iii nitride-based green-laser diodes and waveguide structures thereof
Group III nitride-based laser diodes comprise an n-side cladding layer formed of n-doped (Al,In)GaN, an n-side waveguide layer formed of n-doped (Al)InGaN, an active region, a p-side waveguide layer formed of p-doped (Al)InGaN, and a p-side cladding layer formed of p-doped (Al,In)GaN. Optical mode is shifted away from high acceptor concentrations in p-type layers through manipulation of indium concentration and thickness of the n-side waveguide layer. Dopant and compositional profiles of the p-side cladding layer and the p-side waveguide layer are tailored to reduce optical loss and increased wall plug efficiency.
Owner:CORNING INC
Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
ActiveUS8772757B2Solid-state devicesSemiconductor/solid-state device manufacturingUltraviolet lightsLength wave
Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and / or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA / μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.
Owner:CREELED INC
Laser pumped tunable lasers
InactiveUS20060098696A1High efficiency tunable outputReduce gainLaser detailsAlexandrite LasersLight beam
A laser pumped tunable laser system is disclosed directed to achieving tunable outputs with high wall plug efficiencies. In particular, green laser pumped alexandrite lasers are discussed—both pulsed and CW—wherein the wall plug efficiencies of greater than 2% can be achieved using practical, commercially available pump lasers. In alternative approaches, frequency converted tunable radiation in the UV is achieved with high efficiency from compact, high beam quality devices.
Owner:DOBIN ANDREA
Laser pumped tunable lasers
A laser pumped tunable laser system is disclosed directed to achieving tunable outputs with high wall plug efficiencies. In particular, green laser pumped alexandrite lasers are discussed—both pulsed and CW—wherein the wall plug efficiencies of greater than 2% can be achieved using practical, commercially available pump lasers. In alternative approaches, frequency converted tunable radiation in the UV is achieved with high efficiency from compact, high beam quality devices.
Owner:DOBIN ANDREA
Laser pumped tunable lasers
A laser pumped tunable laser system is disclosed directed to achieving tunable outputs with high wall plug efficiencies. In particular, green laser pumped alexandrite lasers are discussed—both pulsed and CW—where the wall plug efficiencies of greater than 2% can be achieved using practical, commercially available pump lasers. In alternative approaches, frequency converted tunable radiation in the UV is achieved with high efficiency from compact, high beam quality devices.
Owner:DOBIN ANDREA
Nitride semiconductor ultraviolet light-emitting element
ActiveUS11217726B2Improve plugging efficiencyImprove internal quantum efficiencySemiconductor devicesUltraviolet lightsPhysical chemistry
To improve a wall plug efficiency in a nitride semiconductor light-emitting element for extracting ultraviolet light emitted from an active layer toward an n-type nitride semiconductor layer side to outside of the element. In the n-type AlGaN-based semiconductor layer 21 constituting the nitride semiconductor light-emitting element 1, a plurality of thin film-like Ga-rich layers that is a part of the n-type layer 21 having a locally high Ga composition ratio exists spaced apart from each other in a vertical direction that is orthogonal to the upper surface of the n-type layer 21, an extending direction of at least a part of the plurality of Ga-rich layers on a first plane parallel to the vertical direction is inclined with respect to an intersection line between the upper surface of the n-type layer and the first plane, the plurality of Ga-rich layers exists in stripes on the second plane parallel to the upper surface of the n-type layer 21 in an upper layer region having a thickness of 100 nm or less at lower side from the upper surface of the n-type layer 21, AlN molar fractions of the Ga-rich layers 21b are greater than AlN molar fraction of a well layer 22b in an active layer 22 constituting the light-emitting element 1.
Owner:NIKKISO COMPANY
Novel deep-ultraviolet light-emitting diode chip and preparation method thereof
ActiveCN109524526AReduced series resistanceReduce stressSemiconductor devicesUltraviolet lightsHeat losses
The invention relates to a novel deep-ultraviolet light-emitting diode chip comprising an epitaxial structure and a P type metal electrode layer arranged on the epitaxial structure. A plurality of holes are formed in the P type metal electrode layer; and the positions of the adjacent two layers of holes correspond to each other. In addition, the chip also includes an N type metal electrode layer and a connecting layer. The N type metal electrode layer includes a plurality of columns of electrode posts; each column of electrode posts includes a plurality of sub electrode posts that are connected in the holes of an N-AlGaN layer one by one, wherein the diameters of the electrode pots are smaller than the diameters of the holes; and the central space between every two adjacent sub electrode posts is equal. In addition, the invention also relates to a preparation method of a novel deep-ultraviolet light-emitting diode chip. Compared with the conventional long-bar-shaped electrode deep-ultraviolet LED, the provided deep-ultraviolet light-emitting diode has the substantially improved wall plugging efficiency; the heat losses caused by work are reduced substantially; and thus the servicelife of the product is further prolonged.
Owner:EZHOU INST OF IND TECH HUAZHONG UNIV OF SCI & TECH +1
Iii-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent
ActiveUS20190165213A1Improve efficiencyReduce lossesLaser detailsSolid-state devicesEngineeringTunnel junction
A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A / cm2 drive current and less than 15% at 35 A / cm2 drive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 μm. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.
Owner:RGT UNIV OF CALIFORNIA
III-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent
ActiveUS11164997B2Reduce saggingImprove efficiencyLaser detailsSolid-state devicesQuantum efficiencyDriving current
A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A / cm2 drive current and less than 15% at 35 A / cm2 drive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 μm. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.
Owner:RGT UNIV OF CALIFORNIA
Engineered current-density profile diode laser
ActiveUS20210057879A1Low densityHigh densityLaser detailsLaser optical resonator constructionPower diodeErbium lasers
The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversion efficiency of the device beyond the level which can be achieved without application of this technique. This approach can be utilized, e.g., in the fabrication of semiconductor laser chips to improve the output power and wall plug efficiency for applications requiring improved performance operation.
Owner:LAWRENCE LIVERMORE NAT SECURITY LLC
Deep ultraviolet light emitting diode chip and preparation method thereof
ActiveCN109524526BReduced series resistanceReduce congestion effectSemiconductor devicesUltraviolet lightsEngineering
The invention relates to a novel deep-ultraviolet light-emitting diode chip comprising an epitaxial structure and a P type metal electrode layer arranged on the epitaxial structure. A plurality of holes are formed in the P type metal electrode layer; and the positions of the adjacent two layers of holes correspond to each other. In addition, the chip also includes an N type metal electrode layer and a connecting layer. The N type metal electrode layer includes a plurality of columns of electrode posts; each column of electrode posts includes a plurality of sub electrode posts that are connected in the holes of an N-AlGaN layer one by one, wherein the diameters of the electrode pots are smaller than the diameters of the holes; and the central space between every two adjacent sub electrode posts is equal. In addition, the invention also relates to a preparation method of a novel deep-ultraviolet light-emitting diode chip. Compared with the conventional long-bar-shaped electrode deep-ultraviolet LED, the provided deep-ultraviolet light-emitting diode has the substantially improved wall plugging efficiency; the heat losses caused by work are reduced substantially; and thus the servicelife of the product is further prolonged.
Owner:EZHOU INST OF IND TECH HUAZHONG UNIV OF SCI & TECH +1
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Patsnap Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com