45 results about "Nanocrystalline semiconductors" patented technology

A high-conjugated semicyanine dye used as the sensitizer of solar bettery is disclosed. It has the molecular structure: electronic doner-pi conjugated system-electronic doner (D-pi-A) and the formula: D-pi-A-Q-G, and heatores high conjugated level. The nano-crystal semiconductor solar battery sensitized by it has high conversion rate and stability.

The invention is an all-solid nano crystal solar battery and making method. It smears the plasm of semiconductor nano material on the transparent base piece of the electric thin film, then making high-temperature sintering to prepare wide-band semiconductor nano crystal thin film, and then immerge in the solution to obtain sensitized dye nano crystal semiconductor electrode as anode; uses electric polymer or inorganic / electric polymer cooperative system as P-type material to smear the anode, and uses the electric base piece plated with Pt or Au as pair electrodes to compose the solar battery.

The present invention discloses novel solar cell sensitizers, more specifically, the present invention discloses a general formula D-π with electron donor-π conjugated system-electron acceptor (D-π-A) molecular structure -A-Q-G, the hemicyanine dye that contains sulfonic acid or carboxylic acid, compared with the known hemicyanine dye sensitizer, the degree of conjugation of this type of sensitizer is large, and the nanocrystalline semiconductor solar cell sensitized by it has High conversion rate, good stability and excellent effect.

The invention discloses a dye sensitized solar battery integrated by a threadlike light anode with high specific surface area for efficiently absorbing the light, the solar battery is composed of three layers of structures, wherein the first layer is a super-white glass for packaging a cover board, the second layer is a coating metallic net with high specific surface area as the light anode; the coating metallic net with high specific surface area is the metallic net which resists the corrosion of electrolyte or bandwidth gap nanometer crystal semiconductor oxide thin film that a conducting fiber net is coated through coating procedure as charge separation effect; after heat treatment, the sensitized dye is adsorbed to prepare the second layer; the third layer is a coating metal sheet as pair electrodes; the gap between the super-white glass and the coating metal sheet is packaged to form a sealed space which is replete with the electrolyte having the redox. The solar battery of the invention can efficiently collect the electrons and adsorbs more dye to further improve the light absorption of the light anode, solving the problems of large resistance of the conduction glass substrate which limits the battery efficiency, of preparation in large area and of serial, parallel connections of the assemblies, and further enhancing the efficiency of battery.

The invention relates to prepare dye sensitization nano-crystal semiconductor solar cell light anode with electric spinning, which comprises: spraying the solution contained nano-crystal semiconductor conductive substrate by electric field force to form film with porous nano structure to generate current and photo voltage. This invention needs simple devices with low cost and easy control. The product has high specific surface area and porosity. The prepared objective cell has same efficiency as cell by traditional method.

A solar call is provided along with a method for forming a semiconductor nanocrystalline silicon insulating thin-film with a tunable bandgap. The method provides a substrate and introduces a silicon (Si) source gas with at least one of the following source gases: germanium (Ge), oxygen, nitrogen, or carbon into a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. A SiOxNyCz thin-film embedded with a nanocrystalline semiconductor material is deposited overlying the substrate, where x, y, z≧0, and the semiconductor material is Si, Ge, or a combination of Si and Ge. As a result, a bandgap is formed in the SiOxNyCz thin-film, in the range of about 1.9 to 3.0 electron volts (eV). Typically, the semiconductor nanoparticles have a size in a range of 1 to 20 nm.

The invention relates to an electroluminescence device, its light-emitting layer and application. The light-emitting layer comprises at least one nanocrystalline semiconductor material, and at least one exciplex; the emission spectrum of the exciplex at least partially overlaps the excitation spectrum of the nanocrystalline semiconductor material; the exciplex The decay lifetime of the excited state of the species is longer than the decay lifetime of the excited state of the nanocrystalline semiconductor material. During the light-emitting process of the light-emitting layer of the present invention, the exciplex that forms delayed fluorescence can effectively transfer energy to the nanocrystal semiconductor material, thereby obtaining a light-emitting layer of a QLED device with high light-emitting efficiency and stability.

The invention relates to an electroluminescence device, its light-emitting layer and application. The light emitting layer comprises at least one nanocrystalline semiconductor material, and at least one organic light emitting material; the emission spectrum of the organic light emitting material overlaps at least partially the excitation spectrum of the nanocrystalline semiconductor material; the excited state of the organic light emitting material The decay lifetime is greater than 1 microsecond. The present invention innovatively uses an organic luminescent material with a long excited state lifetime, specifically an excited state decay lifetime exceeding 1 microsecond, as the host material, so that the energy of the organic luminescent material can be effectively transferred to the nanocrystal semiconductor material to obtain a High-performance QLED devices can greatly improve the efficiency of electroluminescent devices that use nanocrystalline semiconductor materials as luminescent active components.

The invention relates to an electrochemical preparation method for a ZnS nanocrystalline semiconductor precursor film or a semiconductor film. Electrolyte contains Zn<2+>, S2O3<2->, surfactant and SO3<2-> at the molar ratio of (15-20):(15-25):(0.2-0.8):(0.3+ / -0.1) as well as lithium chloride; the pH value of the electrolyte is between 2.5 and 4.5; then, the eutectoid crystallization of two elements Zn and S is realized with a constant-current method or a constant-potential method to generate a pure ZnS precursor film with a hexagonal-phase or cubic-phase structure; the obtained precursor film is kept at the constant temperature of 250-500DEG C for a period of time under the inert atmosphere protection condition; and a pure cubic-phase ZnS nanocrystalline semiconductor film with the advantages of high orientation and better crystallinity can be obtained. The method provided by the invention has the advantages of strong controllability and good repeatability. The prepared ZnS nanocrystalline semiconductor film is free from impurities and is suitable for the window layer material of a film solar cell.

The invention relates to a combined solar cell capable of improving the utilization rate of solar energy, which comprises a cell body, wherein the structure of the cell body includes a microstructuralpolymer heterojunction and a nanocrystalline discrete island array heterojunction; the outermost layer of the cell body is conductive glass, the conductive glass includes an energy level regulation layer, an electrolyte, a dye sensitization layer, a nanocrystalline semiconductor layer and a metal electrode layer in turn from top to bottom; the conductive glass is divided into a positive electrodeand a negative electrode; and the sunlight passes by the positive electrode, penetrates through a heterojunction interface and is turned into the negative electrode. The combined solar cell has the advantages that the structure is simple, the energy consumed by preparing the cell is less, and the energy recovery period is short; the combined solar cell is non-toxic and pollution-free in the production process, ultra-thin in volume and light in weight, has mechanical flexibility in particular, can be mounted to the surface of various objects without occupying space resource and destroying surface characteristics of the original covered object, and is worthy of large-scale popularization and application.

A solar cell comprises a transparent glass tube with multiple metal wires plated by film being material of wide band gap nanosemiconductor film oxide for separating electric charge. It is featured as utilizing metal wires as light positive electrode of solar cell after they are connected in parallel and led out, placing pair electrode in tube to undertake function of catalysis and electronic transmission, filling electrolyte in the tube and using seal glue to package the tube.

The invention is an all-solid nano crystal solar battery and making method. It smears the plasm of semiconductor nano material on the transparent base piece of the electric thin film, then making high-temperature sintering to prepare wide-band semiconductor nano crystal thin film, and then immerge in the solution to obtain sensitized dye nano crystal semiconductor electrode as anode; uses electric polymer or inorganic / electric polymer cooperative system as P-type material to smear the anode, and uses the electric base piece plated with Pt or Au as pair electrodes to compose the solar battery.