The invention provides a preparation method for directly depositing and growing
graphene on a liquid
bed in a variable-temperature area. Under protective gas, a
solvent of the liquid
bed in the variable-temperature area is a molten medium and a solute of the liquid
bed in the variable-temperature area is
atomic carbon; the molten medium consists of one or more substances with
boiling point higher than carbon
cracking temperature and
melting point lower than the
melting point of a target substrate; during work, the medium is heated to be in a
molten state; the variable-temperature area is divided into a relative high-temperature area, a transitional variable-temperature area and a relative low-temperature area; the
working temperature of the molten medium in the relative high-temperature area is higher than the carbon
cracking temperature, the
carbon source is activated and cracked in the relative high-temperature area,
atomic carbon formed after
cracking is dissolved into the molten medium, and the molten medium, in which the
atomic carbon is dissolved, is cooled by the transitional variable-temperature area and is conveyed to the relative low-temperature area; and in the relative low-temperature area, the
working temperature of the molten medium is slightly higher than or equal to the supersaturated
precipitation temperature of the atomic carbon. The
graphene can grow on the target substrate continuously and directly and does not need to be transferred, and the characteristics of excellent quality of a
graphene film, low preparation cost, high efficiency and little
pollution are achieved.