Preparation method for directly depositing and growing graphene on liquid bed in variable-temperature area

Abstract

The invention provides a preparation method for directly depositing and growing graphene on a liquid bed in a variable-temperature area. Under protective gas, a solvent of the liquid bed in the variable-temperature area is a molten medium and a solute of the liquid bed in the variable-temperature area is atomic carbon; the molten medium consists of one or more substances with boiling point higher than carbon cracking temperature and melting point lower than the melting point of a target substrate; during work, the medium is heated to be in a molten state; the variable-temperature area is divided into a relative high-temperature area, a transitional variable-temperature area and a relative low-temperature area; the working temperature of the molten medium in the relative high-temperature area is higher than the carbon cracking temperature, the carbon source is activated and cracked in the relative high-temperature area, atomic carbon formed after cracking is dissolved into the molten medium, and the molten medium, in which the atomic carbon is dissolved, is cooled by the transitional variable-temperature area and is conveyed to the relative low-temperature area; and in the relative low-temperature area, the working temperature of the molten medium is slightly higher than or equal to the supersaturated precipitation temperature of the atomic carbon. The graphene can grow on the target substrate continuously and directly and does not need to be transferred, and the characteristics of excellent quality of a graphene film, low preparation cost, high efficiency and little pollution are achieved.

Description

technical field [0001] The invention relates to the field of preparation of new materials, in particular to a preparation method for directly depositing and growing graphene on a liquid bed in a variable temperature zone. Background technique [0002] Graphene is a carbon atom with sp 2 A two-dimensional crystal with a honeycomb lattice formed by hybridization. In 2004, Andre Geim and Konstantin Novoselov of the University of Manchester successfully separated graphene from graphite, for which they won the 2010 Nobel Prize in Physics. [0003] Graphene has excellent properties. First, the specific surface area of ​​graphene is very large, up to 2630m 2 / g. Second, carbon atoms in graphene are represented by sp 2 Each carbon atom and its adjacent three carbon atoms form a stable carbon-carbon bond through a σ bond, so that graphene has extremely high mechanical properties, its Young's modulus can reach 1100GPa, and its fracture strength can reach Up to 130GPa. Again, th...

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Problems solved by technology

The production process has poor stability, and the product structure is uncertain. The production process uses strong acids and strong oxidants, causing serious environmental pollution and high processing costs.

[0006] 2. CVD graphene has good performance, but the cost is extremely high and the production efficiency is extremely low

Moreover, the number of graphene layers produced by this method, size and quality are difficult to control, and there will be traces of sodium and chloride ion sticking dirt, so high-quality graphene films cannot be obtained.

[0008] Although the method of plasma non-high-temperature liquid-phase growth of graphene can directly grow graphene film on the target substrate without transferring, and has excellent performance and quality, it needs plasma enhancement, and the cost of carbon source activation and cracking is high. The amount of atomic carbon dissolved in the phase medium is less, and the growth control is more difficult